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    VRBG5314S

    Abstract: VRPY5314S wd1020
    Text: A C INTERFACE INC IDE D | D0S33Ô3 D0D02Û7 2 STANLEY SUPER BRIGHT LED LAMP I BI COLOR TYPE 05 T-1 3/4 TYPE SERIES ISELECTION GUIDE COLOR "v: MATERIAL . J PART NUMBER Red Green GaAsP/Gap GaP V R B G 5314S Red Yellow GaAsP/GaP GaP V R P Y 5 31 4S • FEATURES


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    PDF D0S33Ã VRBG5314S VRPY5314S VRBG5314S VRPY5314S R314S wd1020

    970HD

    Abstract: No abstract text available
    Text: 47E T> MONITOR PRODUCTS CO INC bE'ì'iOTb D0D02bS 1 • H P C O ^ j -¿,-4¿j MONITOR PRODUCTS M O N I T O R 970HD HIGH SPEED CMOS INDEPENDENT DUAL FREQUENCY OSCILLATOR PACKAGE DIMENSIONS FEATURES 970HD .815" M ax._ 2 0 .8 n .175" Min. (4.5) .200" Max.


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    PDF D0D02bS 970HD 970HD

    dl604

    Abstract: No abstract text available
    Text: DATATRONICS EbE D • Efci514flE D0D0270 T -q .q -1 3 3 S E R IE S 604 5-TAPS 16 PIN FAST LOGIC D ELA Y MODULES 1 • 16 Pin D IL Package >TTL and D T L Compatible • 5 Equally Spaced Taps Specifications: • Supply Voltage • Logic 1 Input Current • Logic 0 Input Current


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    PDF StS14Ã Q000270 25VDC DL604-4A DL604-4B) 92352TEL dl604

    45016m

    Abstract: J12-18C-R250U J12D-M204-R01M J12-18C-R01M J12D-M204-R02M metal detectors circuit HgCdTe PbSe Judson judson PA-100 J12-18C
    Text: E G S G JUI1S0N 31E D m 3030b05 D0D0225 □ • JlID T -V /-V / Indium Arsenide Detector Operating Notes General Responsivity Temperature Effects J12 Series detectors are high-quality Indium Arsenide photodiodes for use in the 1 to 3.6 urn wavelength range.


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    PDF 303Db0S J12TE2-8B6-R01M J12TE2-8B6-R02M J12TE3 J12TE3-66S J12D-M204-R01M J12D-M204-R02M 45016m J12-18C-R250U J12-18C-R01M metal detectors circuit HgCdTe PbSe Judson judson PA-100 J12-18C

    Untitled

    Abstract: No abstract text available
    Text: Rectangular LED Array G30B and G32XB Series ¡/idea The G30B is made up of a 10 LED lamps. The design of the G30B precludes cutting of the holder to make different length units. The G32XB is made up of a maximum of 10 lamps per array. The G30B array has a shoulder top and bottom. The leads can be


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    PDF G32XB G32XB D0D02E1

    Untitled

    Abstract: No abstract text available
    Text: K n o x S e m ic o n d u c t o r , I n c SMV3022 SERIES SUPER HYPERABRUPT TUNING DIODES FORVCXO ’S • • • • • • • Extremely High Capacitance Swing Linear Characteristics Uniform Capacitance / Temperature Coefficient Highly Reproducible Ion Implanted Structure


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    PDF SMV3022 OT-23 OD-323 SMV30222* SMV30223Â OT-23 D0D0210

    Untitled

    Abstract: No abstract text available
    Text: T- :- 34E D MACRONIX INC SbfifififiE □OQDl'ifi B • T'75-O?-iS MXBQ14 Preliminary_¡ V B A CORDLBRSS PHONE 1C HANDSET UNIT FEATURES: • • • • Reduce total component counts. Easy production and enhance productivity.


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    PDF MXBQ14 000sq.

    Untitled

    Abstract: No abstract text available
    Text: :a l i l o n d l l Itr U « G T -4 8 0 0 1 A Switched Ethernet Controller forlOBaseX Preliminary Rev. Revision 1.4 7/17/97 Please contact Galileo Technology for possible updates before finalizing a design. FEATURES Single-chip, low cost, Switched Ethernet Controller


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    PDF GT-48002A 100BaseX GT-48003 100VGAnyLAN 10Mbps 20Mbps

    AKD12000

    Abstract: Anadigics MMIC Downconverter lnb ku-band SI MMIC DOWNCONVERTER
    Text: Data Sheet AKD12000 Ku-Band DBS MMIC Downconverter L^kM kDIGIG Your GaAs IC Source •{.- • .i.-.:■ #VvV •: i .i ’- . ’ a.,«*'4-; ■ Integrated Monolithic Downconverter V y« ■ 6 dB Noise Figure T ■ 35 dB Conversion Gain ■ Small Size


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    PDF AKD12000 28-28JÃ Anadigics MMIC Downconverter lnb ku-band SI MMIC DOWNCONVERTER

    VERPACKUNGSVORSCHRIFT

    Abstract: No abstract text available
    Text: RA 2505.RA 2510 Si-Gleichrichterzellen in Button-Bauform Silicon Rectifier Button-Cell m 25 A Nominal current Nennstrom =a 50. 1000 V Repetitive peak reverse voltage Periodische Spitzensperrspannung tr Plastic case, coloured metal ring indicates cathode


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    PDF UL94V-0 0D1RS14 DGG174 000017S VERPACKUNGSVORSCHRIFT

    Untitled

    Abstract: No abstract text available
    Text: FCI Semiconductor 6.0 A M P KBPC6 Series Preliminary Data Sheet S ing le Phase S ilicon Bridge Description Mechanical Dimensions KBPC6 Series Hole for # 6 Screw .040 Features O Small Size O Low Forward Voltage Drop O UL Recognition Available O_ 150 Amp Surge Overload Rating


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F9012 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet',tm process features gold metal for greatly extended lifetime. Low output capacitance


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    PDF F9012 VGS12V 1110AvenidaAcaso, 72mOCH D0D0273

    Untitled

    Abstract: No abstract text available
    Text: TIED87, TIED88, TIED 89 Reference Diode Pairs Texas Optoelectronics, Inc. DESCRIPTION FEA TU R ES These diode pairs consist of an avalanche photodiode APD and a small reference diode that have been manufactured together to ensure close matching of both the breakdown voltages


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    PDF TIED87, TIED88, 000D524

    Untitled

    Abstract: No abstract text available
    Text: 1.8 x 5.3 mm LED Array G26XB. G28XB and G38XB Series The G26XB, G28XB and the G38XB series are each made up of the same rectangular LED lamps. The maximum number of lamps per array is 10, 5, and 12 respectively. The G26XB holder has a 1 mm wide shoulder top and bottom. The G28XBhas a


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    PDF G26XB. G28XB G38XB G26XB, G26XB G28XBhas G3812B/4E

    ISD1000A

    Abstract: No abstract text available
    Text: INFORMATION STORAGE <§> De v ic e s ß " OiipCorder' HCHMOCOCVÍYUO I S D 1 0 0 0 A S e r ie s Single-Chip Voice Record/Playback Devices 16- and 20-Second Durations FEATURES • Easy-to-use single-chip voice record/play­ back solution Fully addressable to handle multiple


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    PDF 20-Second 100-year ISD1000A ISD10 28-Pin ISD1016AP ISD1020AP

    300D

    Abstract: 400M L2008
    Text: polyfet rf devices L2008 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1,11 process features gold metal for greatly extended lifetime. Low output capacitance


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    PDF L2008 72mOCH 300D 400M L2008

    b72c

    Abstract: L72s T1405
    Text: SSE J> OAK TECHNOLOGY INC b72TMQS 0 0 0 0 2 4 1 T 431 « O A K T - v s t - 3 3 - n — naanm i V C E R U OAK TECHNOLOGY, INC. •••tim ti ••••m u ■■■ m ini May 1992 OTI-95C71 Video Compression/Expansion Processor DISTINCTIVE CHARACTERISTICS


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    PDF b72TMQS OTI-95C71 16-word b72T405 b72T4G5 G002b7 b72c L72s T1405

    lt 7209

    Abstract: 7002 transistor sm EC112
    Text: MôôbSlO OOOOHbb □ O I S O 45E D ISOCOM COMPONENTS LTD t H ll AV1X, H ll AV2X, H ll AV3X ._ % r ÆjH.j M m J - ifè -î « I » ! OPTICALLY COUPLED ISOLATOR TRANSISTOR OUTPUT DESCRIPTION The HI 1 AV is a optically coupled isolator consisting o f a Gallium Arsenide infrared emitting diode and a


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    PDF H11AV1X H11AV3X Vcc-10V Rl-100R lt 7209 7002 transistor sm EC112