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    Abstract: No abstract text available
    Text: MA3301S10000000 N-Ch and P-Ch Fast Switching MOSFETs Symbol Rating Parameter N-Channel P-Channel VDS Drain-Source Voltage VGS Gate-Source Voltage 30 -30 Units V Rev A.01 D092209 TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D061009


    Original     		PDF MA3301S10000000 D092209 D061009

    Untitled

    Abstract: No abstract text available
    Text: MA3301S10000000 N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The MA3301S100 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck


    Original     		PDF MA3301S10000000 MA3301S100 D061009 3000pcs 6000pcs