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    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E T> 7 ^ 4 1 4 2 D017532 447 « S U G K KM658128/L/L-L/LD/LD-L Pseudo SRAM 128K X 8 Bit CMOS Pseudo Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: — CE A ccess Time . 80,100,120ns Max. — Cycle Tim e . Random R ead/W rite Cycle


    OCR Scan     		PDF D017532 KM658128/L/L-L/LD/LD-L 120ns 190ns KM658128/LVL-L/LD/LD-L

    DD1752

    Abstract: 5BL41 adr9 ks09 8051 128-PIN
    Text: DS80CH10/DS82CH10/DS80CL10/DS82CL10 PRELIM INARY DS80CH10/DS82CH10 DS80CL10/DS82CL10 DALLAS Green Energy Manager s e m ic o n d u c to r PRODUCT SPECIFICATION V2.2 PRELIMINARY Copyright 1995 by Dallas Semiconductor Corporation. All Rights Reserved. For important information regarding


    OCR Scan     		PDF DS80CH10/DS82CH10/DS80CL10/DS82CL10 DS80CH10/DS82CH10 DS80CL10/DS82CL10 2L1413D DG17552 128-PIN 56-G4011-000 0017bbl DS80CH10-E00 DD1752 5BL41 adr9 ks09 8051 128-PIN