DM 321
Abstract: magnetoresistance element
Text: SONY CORP/COMPONENT PRODS M^E D &3&R3&3 D0031b0 ^ DM-231 SO N Y . Magnetoresistance Element / *•Cq Description r DM-231 a magnetic sensor using magnétorésist ance effect is. composed of ferromagnetic material deposited by evaporation on a silicon substrate.lt is
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D0031b0
DM-231
150mVp-p
A3fl23fi3
QQQ31b3
DM-231
T-65-05
DM 321
magnetoresistance element
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LAS1605
Abstract: 12 VOLT 2 AMP regulator LAS16U
Text: SEM T EC H CORP SÔE D • 0 1 3 1 1 3 ^ DG DB IS T 3TS * S E T 2 AMP POSITIVE VOLTAGE REGULATORS LAS 1600 MAXIMUM UNITS v,N 35 40 ('M2) Volts Power Dissipation Pd Internally Limited*3) Thermal Resis tance Junction To Case 0JC 2.5 °C/Watt Operating Junc
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000315e]
22julF
00031h4
074-U
LAS1605
12 VOLT 2 AMP regulator
LAS16U
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074-U
Abstract: 1612B 16A05 16A12 16A15
Text: SEM T EC H CORP SÔE D • 0 1 3 1 1 3 ^ DG DB IS T 3TS * S E T 2 AMP POSITIVE VOLTAGE REGULATORS LAS 1600 MAXIMUM UNITS v,N 35 40 ('M2) Volts Power Dissipation Pd Internally Limited*3) Thermal Resis tance Junction To Case 0JC 2.5 °C/Watt Operating Junc
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000315e]
00031h4
074-U
1612B
16A05
16A12
16A15
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LAS1605
Abstract: LAS16U 12 VOLT 2 AMP regulator 1612B 16A05 16A12 LAS16CB las 1216 LAS-16U voltage regulator
Text: SEMTECH CORP SflE ]> • 013113^ □G D31 5ci 3TS * S E T 2 AMP POSITIVE VOLTAGE REGULATORS a M AXIM U M UNITS v,N 35 40 <1>(2) Volts Power Dissipation Pd Internally Limited*3) Thermal Resis tance Junction To Case 0JC 2.5 °C/Watt Operating Junc tion Tempera
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0D031b3
22m-F
00031h4
074-U
LAS1605
LAS16U
12 VOLT 2 AMP regulator
1612B
16A05
16A12
LAS16CB
las 1216
LAS-16U voltage regulator
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