Untitled
Abstract: No abstract text available
Text: SODSPDHV100 Diodes Silicon Center-Tapped Doubler I O Max.(A) Output Current200m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage100k I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage210 @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)
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ODSPDHV100
Current200m
Voltage100k
Voltage210
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Untitled
Abstract: No abstract text available
Text: 590 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current200m @Temp (øC) (Test Condition)25 V(RRM)(V) Rep.Pk.Rev. Voltage9.0k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.20 V(FM) Max.(V) Forward Voltage15 @I(FM) (A) (Test Condition)200m @Temp. (øC) (Test Condition)25
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Current200m
Voltage15
StyleAxial-94
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Untitled
Abstract: No abstract text available
Text: SPCHV100 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current200m @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage100k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.23 V(FM) Max.(V) Forward Voltage210 @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)25’
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SPCHV100
Current200m
Voltage100k
Voltage210
Current10u
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Untitled
Abstract: No abstract text available
Text: EU183CP Thyristors Half-Controlled Negative Thyristor Doubler V DRM Max. (V)600 V(RRM) Max. (V)600 I(T) Rated Maximum (A)18± @Temp. (øC) (Test Condition)85Ï I(TSM) Max. (A)210Î @ t(w) (s) (Test Condition)8.3m I(GT) Max. (A)160m V(GT) Max.(V)2.5 I(H) Max. (A) Holding Current200m
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EU183CP
Current200m
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Untitled
Abstract: No abstract text available
Text: B612FSE2T Thyristors Common-Cathode Half-Controlled Bridge V RRM Max. (V)240£ V(DRM) Max. (V) I(T) Rated Maximum (A)46² @Temp. (øC) (Test Condition)85# I(TSM) Max. (A)650 @ t(w) (s) (Test Condition) I(GT) Max. (A)150m V(GT) Max.(V)3.0 I(H) Max. (A) Holding Current200m
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B612FSE2T
Current200m
Junc-Case500m
HL049HD5
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Untitled
Abstract: No abstract text available
Text: B564-2 Thyristors Dual Common Cathode SCR Module V DRM Max. (V) V(RRM) Max. (V)440£ I(T) Rated Maximum (A)27² @Temp. (øC) (Test Condition)85# I(TSM) Max. (A)325 @ t(w) (s) (Test Condition) I(GT) Max. (A)110m V(GT) Max.(V)2.5 I(H) Max. (A) Holding Current200m
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B564-2
Current200m
Junc-Case600m
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Untitled
Abstract: No abstract text available
Text: B534-2 Thyristors Half-Controlled Bridge Thyristor V(RRM) Max. (V)440£ V(DRM) Max. (V) I(T) Rated Maximum (A)27² @Temp. (øC) (Test Condition)85# I(TSM) Max. (A)325 @ t(w) (s) (Test Condition) I(GT) Max. (A)110m V(GT) Max.(V)2.5 I(H) Max. (A) Holding Current200m
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B534-2
Current200m
Junc-Case600m
HL049HD5
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Untitled
Abstract: No abstract text available
Text: EU183FW Thyristors Half-Controlled Negative Thyristor Doubler V DRM Max. (V)1.2k V(RRM) Max. (V)1.2k I(T) Rated Maximum (A)18± @Temp. (øC) (Test Condition)85Ï I(TSM) Max. (A)210Î @ t(w) (s) (Test Condition)8.3m I(GT) Max. (A)160m V(GT) Max.(V)2.5 I(H) Max. (A) Holding Current200m
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EU183FW
Current200m
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Untitled
Abstract: No abstract text available
Text: DT46N1400KOC Thyristors Half-Controlled Negative Thyristor Doubler V DRM Max. (V)1.4k V(RRM) Max. (V)1.4k I(T) Rated Maximum (A)46± @Temp. (øC) (Test Condition)85# I(TSM) Max. (A)1k¥ @ t(w) (s) (Test Condition)10m I(GT) Max. (A)150m V(GT) Max.(V)2.5 I(H) Max. (A) Holding Current200m
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DT46N1400KOC
Current200m
Current10m
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Untitled
Abstract: No abstract text available
Text: DT25N1200KOC Thyristors Half-Controlled Negative Thyristor Doubler V DRM Max. (V)1.2k V(RRM) Max. (V)1.2k I(T) Rated Maximum (A)25± @Temp. (øC) (Test Condition)85# I(TSM) Max. (A)460¥ @ t(w) (s) (Test Condition)10m I(GT) Max. (A)150m V(GT) Max.(V)2.5 I(H) Max. (A) Holding Current200m
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DT25N1200KOC
Current200m
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Untitled
Abstract: No abstract text available
Text: EU183AT Thyristors Half-Controlled Negative Thyristor Doubler V DRM Max. (V)200 V(RRM) Max. (V)200 I(T) Rated Maximum (A)18± @Temp. (øC) (Test Condition)85Ï I(TSM) Max. (A)210Î @ t(w) (s) (Test Condition)8.3m I(GT) Max. (A)160m V(GT) Max.(V)2.5 I(H) Max. (A) Holding Current200m
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EU183AT
Current200m
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Untitled
Abstract: No abstract text available
Text: EU183DP Thyristors Half-Controlled Negative Thyristor Doubler V DRM Max. (V)800 V(RRM) Max. (V)800 I(T) Rated Maximum (A)18± @Temp. (øC) (Test Condition)85Ï I(TSM) Max. (A)210Î @ t(w) (s) (Test Condition)8.3m I(GT) Max. (A)160m V(GT) Max.(V)2.5 I(H) Max. (A) Holding Current200m
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EU183DP
Current200m
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Untitled
Abstract: No abstract text available
Text: BAR223-45 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current200m V(RRM)(V) Rep.Pk.Rev. Voltage4.5k t(rr) Max.(s) Rev.Rec. Time200n @I(F) (A) (Test Condition)20m @I(R) (A) (Test Condition)40m V(FM) Max.(V) Forward Voltage10
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BAR223-45
Current200m
Time200n
Voltage10
Current10u
Current500u
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Untitled
Abstract: No abstract text available
Text: 1N270+JAN Diodes Germanium Diode Military/High-RelY I O Max.(A) Output Current200m V(RRM)(V) Rep.Pk.Rev. Voltage100“ I(FSM) Max.(A) Pk.Fwd.Sur.Cur.500m V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)200m I(RM) Max.(A) Reverse Current100u @V(R) (V)(Test Condition)50
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1N270
Current200m
Voltage100â
Current100u
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Untitled
Abstract: No abstract text available
Text: BAS20L Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current200m V(RRM)(V) Rep.Pk.Rev. Voltage150 t(rr) Max.(s) Rev.Rec. Time50n @I(F) (A) (Test Condition)30m @I(R) (A) (Test Condition)30m V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)100m
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BAS20L
Current200m
Voltage150
Time50n
Current100n
Current100u
StyleTO-236
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Untitled
Abstract: No abstract text available
Text: 653-4 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current200m @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage4.0k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.3.0 V(FM) Max.(V) Forward Voltage6.0 @I(FM) (A) (Test Condition)200m @Temp. (øC) (Test Condition)25’
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Current200m
Current50m
StyleDO-27
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Untitled
Abstract: No abstract text available
Text: BAT48 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current200m @Temp (øC) (Test Condition)25# V(RRM)(V) Rep.Pk.Rev. Voltage40 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.1.0 V(FM) Max.(V) Forward Voltage750m @I(FM) (A) (Test Condition)200m
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BAT48
Current200m
Voltage40
Voltage750m
Current25u
Current50u
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Untitled
Abstract: No abstract text available
Text: CMPD2836 Diodes Center-Tapped Negative CA HS Rectifier I(O) Max.(A) Output Current200m V(RRM)(V) Rep.Pk.Rev. Voltage75 t(rr) Max.(s) Rev.Rec. Time6.0n @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)50m
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CMPD2836
Current200m
Voltage75
StyleSOT-23
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Untitled
Abstract: No abstract text available
Text: MMBD1010LT1 Diodes Center-Tapped Negative CA Silicon Rectifier I O Max.(A) Output Current200m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage30 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.500m V(FM) Max.(V) Forward Voltage850m @I(FM) (A) (Test Condition)1.0m
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MMBD1010LT1
Current200m
Voltage30
Voltage850m
Current500p
StyleTO-236AB
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Untitled
Abstract: No abstract text available
Text: MC080 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current200m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)200m @Temp. (øC) (Test Condition)
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MC080
Current200m
Voltage800
Current30u
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Untitled
Abstract: No abstract text available
Text: TD86N06KOF-A Thyristors Center-Tapped CA Thyristor Doubler V DRM Max. (V)600 V(RRM) Max. (V) I(T) Rated Maximum (A)86± @Temp. (øC) (Test Condition)85# I(TSM) Max. (A)1.8k¥ @ t(w) (s) (Test Condition)10m I(GT) Max. (A)150m V(GT) Max.(V)1.4 I(H) Max. (A) Holding Current200m
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TD86N06KOF-A
Current200m
Current30m
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Untitled
Abstract: No abstract text available
Text: 1N3666+JANTX Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current200m V(RRM)(V) Rep.Pk.Rev. Voltage80 t(rr) Max.(s) Rev.Rec. Time300n @I(F) (A) (Test Condition)30m @I(R) (A) (Test Condition)500u V(FM) Max.(V) Forward Voltage1.0
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1N3666
Current200m
Voltage80
Time300n
Current10u
Current150u
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Untitled
Abstract: No abstract text available
Text: BAV17S Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current200m V(RRM)(V) Rep.Pk.Rev. Voltage25 t(rr) Max.(s) Rev.Rec. Time50n @I(F) (A) (Test Condition)30m @I(R) (A) (Test Condition)30m V(FM) Max.(V) Forward Voltage1 @I(FM) (A) (Test Condition)100m
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BAV17S
Current200m
Voltage25
Time50n
Current100n
StyleDO-34
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Untitled
Abstract: No abstract text available
Text: BAS45A Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current200m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage125 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.4.0 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)100m @Temp. (øC) (Test Condition)25
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BAS45A
Current200m
Voltage125
Current500n
StyleDO-34
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