CYU01M16ZFC Search Results

CYU01M16ZFC Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
CYU01M16ZFC		Cypress Semiconductor	16-Mbit (1M x 16) Pseudo Static RAM		Original	PDF
CYU01M16ZFCU-55BVXI		Cypress Semiconductor	IC SRAM CHIP ASYNC SINGLE 1.8V 16MBIT 1MX16 55NS 48VFBGA		Original	PDF
CYU01M16ZFCU-70BVXI		Cypress Semiconductor	IC SRAM CHIP ASYNC SINGLE 1.8V 16MBIT 1MX16 70NS 48VFBGA		Original	PDF

CYU01M16ZFC Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: CYU01M16ZFC MoBL3 PRELIMINARY 16-Mbit 1M x 16 Pseudo Static RAM Features • Wide voltage range: 1.7V–1.95V • Access Time: 70 ns • Ultra-low active power — Typical active current: 3 mA @ f = 1 MHz — Typical active current: 18 mA @ f = fmax (For 70 ns	Original	PDF	CYU01M16ZFC 16-Mbit 16-word 48-ball I/O15)
CYU01M16ZFC Abstract: No abstract text available Text: CYU01M16ZFC MoBL3 PRELIMINARY 16-Mbit 1M x 16 Pseudo Static RAM Features • Wide voltage range: 1.7V–1.95V • Access Time: 55 ns, 70 ns • Ultra-low active power — Typical active current: TBD @ f = 1 MHz Writing to the device is accomplished by taking Chip Enable	Original	PDF	CYU01M16ZFC 16-Mbit I/O15) 16-word CYU01M16ZFC
Untitled Abstract: No abstract text available Text: CYU01M16ZFC MoBL3 PRELIMINARY 16-Mbit 1M x 16 Pseudo Static RAM Features • Wide voltage range: 1.7V–1.95V • Access Time: 55 ns, 70 ns • Ultra-low active power — Typical active current: TBD @ f = 1 MHz Writing to the device is accomplished by taking Chip Enable	Original	PDF	CYU01M16ZFC 16-Mbit 16-word 48-ball I/O15)
CYU01M16ZFC Abstract: No abstract text available Text: CYU01M16ZFC MoBL3 PRELIMINARY 16-Mbit 1M x 16 Pseudo Static RAM Features • Wide voltage range: 1.7V–1.95V • Access Time: 70 ns • Ultra-low active power — Typical active current: 3 mA @ f = 1 MHz — Typical active current: 18 mA @ f = fmax • Ultra low standby power	Original	PDF	CYU01M16ZFC 16-Mbit 16-word 48-ball CYU01M16ZFC