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    CY7C108 Price and Stock

    Rochester Electronics LLC CY7C1089DV33-12BAXI

    IC SRAM 64MBIT PARALLEL 48FBGA
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    DigiKey CY7C1089DV33-12BAXI Bulk 298 3
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    Infineon Technologies AG CY7C1081DV33-12BAXI

    IC SRAM 64MBIT PARALLEL 48FBGA
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    DigiKey CY7C1081DV33-12BAXI Tray
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    Infineon Technologies AG CY7C1089DV33-12BAXI

    SRAM Chip Async Single 3.3V 64M-Bit 8M x 8 12ns 48-Pin FBGA - Trays (Alt: CY7C1089DV33-12BAX)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas CY7C1089DV33-12BAXI Tray 4 Weeks 3
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    Cypress Semiconductor CY7C1089DV33-12BAXI

    Standard SRAM, 8MX8, 12ns PBGA48 '
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    Rochester Electronics CY7C1089DV33-12BAXI 298 1
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    Cypress Semiconductor CY7C10820VC

    Electronic Component
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    ComSIT USA CY7C10820VC 445
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    CY7C108 Datasheets (25)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CY7C1081DV33-12BAXI Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 64MBIT 12NS 48FBGA Original PDF
    CY7C108-25 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    CY7C108-25DC Cypress Semiconductor 131,072 x 8 Static R/W RAM Scan PDF
    CY7C108-25DMB Cypress Semiconductor 131,072 x 8 Static R/W RAM Scan PDF
    CY7C108-25LC Cypress Semiconductor 131,072 x 8 Static R/W RAM Scan PDF
    CY7C108-25LMB Cypress Semiconductor 131,072 x 8 Static R/W RAM Scan PDF
    CY7C108-35 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    CY7C108-35DC Cypress Semiconductor 131,072 x 8 Static R/W RAM Scan PDF
    CY7C108-35DMB Cypress Semiconductor 131,072 x 8 Static R/W RAM Scan PDF
    CY7C108-35LC Cypress Semiconductor 131,072 x 8 Static R/W RAM Scan PDF
    CY7C108-35LMB Cypress Semiconductor 131,072 x 8 Static R/W RAM Scan PDF
    CY7C108-45 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    CY7C108-45DC Cypress Semiconductor 131,072 x 8 Static R/W RAM Scan PDF
    CY7C108-45DMB Cypress Semiconductor 131,072 x 8 Static R/W RAM Scan PDF
    CY7C108-45LC Cypress Semiconductor 131,072 x 8 Static R/W RAM Scan PDF
    CY7C108-45LMB Cypress Semiconductor 131,072 x 8 Static R/W RAM Scan PDF
    CY7C1088 Cypress Semiconductor 128K x 9 Static RAM Original PDF
    CY7C1088-12 Cypress Semiconductor 128K x 9 Static RAM Scan PDF
    CY7C1088-12VC Cypress Semiconductor SRAM GP Single Port Original PDF
    CY7C1088-15 Cypress Semiconductor 128K x 9 Static RAM Scan PDF

    CY7C108 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CY7C1081DV33 64-Mbit 4 M x 16 Static RAM Features Functional Description • High speed ❐ tAA = 12 ns The CY7C1081DV33 is a high-performance CMOS static RAM organized as 4,194,304 words by 16 bits. ■ Low active power ❐ ICC = 300 mA at 12 ns ■ Low complementary metal oxide semiconductor (CMOS)


    Original     		PDF CY7C1081DV33 64-Mbit CY7C1081DV33 I/O15)

    CY7C1088

    Abstract: o428 IO113 8A2512
    Text: ADVANCED INFORMATION CY7C1088 128K x 9 Static RAM Features D D D D D D Functional Description High speed Ċ The CY7C1088 is a highĆperformance CMOS static RAM organized as 131,072 words by 9 bits. Easy memory expansion is provided by an active LOW chip enable


    Original     		PDF CY7C1088 CY7C1088 32pin 7C1088-12 7C1088-15 7C1088-20 7C1088-25 o428 IO113 8A2512

    CY7C1089DV33

    Abstract: No abstract text available
    Text: CY7C1089DV33 64-Mbit 8M x 8 Static RAM Features Functional Description • High speed ❐ tAA = 12 ns The CY7C1089DV33 is a high-performance CMOS static RAM organized as 8,388,608 words by 8 bits. ■ Low active power ❐ ICC = 300 mA ■ Low complementary metal oxide semiconductor (CMOS)


    Original     		PDF CY7C1089DV33 64-Mbit CY7C1089DV33

    Untitled

    Abstract: No abstract text available
    Text: CY7C1089DV33 64-Mbit 8 M x 8 Static RAM Features Functional Description • High speed ❐ tAA = 12 ns The CY7C1089DV33 is a high-performance CMOS static RAM organized as 8,388,608 words by 8 bits. ■ Low active power ❐ ICC = 300 mA at 12 ns ■ Low complementary metal oxide semiconductor (CMOS)


    Original     		PDF CY7C1089DV33 64-Mbit CY7C1089DV33

    CY7C1081DV33

    Abstract: No abstract text available
    Text: CY7C1081DV33 64-Mbit 4 M x 16 Static RAM Features Functional Description • High speed ❐ tAA = 12 ns The CY7C1081DV33 is a high-performance CMOS static RAM organized as 4,194,304 words by 16 bits. ■ Low active power ❐ ICC = 300 mA at 12 ns ■ Low complementary metal oxide semiconductor (CMOS)


    Original     		PDF CY7C1081DV33 64-Mbit CY7C1081DV33 I/O15)

    CY7C1081DV33-12BAXI

    Abstract: No abstract text available
    Text: CY7C1081DV33 64-Mbit 4 M x 16 Static RAM Features Functional Description • High speed ❐ tAA = 12 ns The CY7C1081DV33 is a high-performance CMOS static RAM organized as 4,194,304 words by 16 bits. ■ Low active power ❐ ICC = 300 mA at 12 ns ■ Low complementary metal oxide semiconductor (CMOS)


    Original     		PDF CY7C1081DV33 64-Mbit CY7C1081DV33 I/O15) CY7C1081DV33-12BAXI

    Untitled

    Abstract: No abstract text available
    Text: CY7C1089DV33 64-Mbit 8 M x 8 Static RAM Functional Description Features • High speed ❐ tAA = 12 ns The CY7C1089DV33 is a high-performance CMOS static RAM organized as 8,388,608 words by 8 bits. ■ Low active power ❐ ICC = 300 mA at 12 ns ■ Low complementary metal oxide semiconductor (CMOS)


    Original     		PDF CY7C1089DV33 64-Mbit CY7C1089DV33

    Untitled

    Abstract: No abstract text available
    Text: CY7C1081DV33 64-Mbit 4 M x 16 Static RAM Functional Description Features • High speed ❐ tAA = 12 ns The CY7C1081DV33 is a high-performance CMOS static RAM organized as 4,194,304 words by 16 bits. ■ Low active power ❐ ICC = 300 mA at 12 ns ■ Low complementary metal oxide semiconductor (CMOS)


    Original     		PDF CY7C1081DV33 64-Mbit CY7C1081DV33 I/O15)

    SRAM timing

    Abstract: CY7C1088 PM7322 PM7323 PMC-940904 RCMP200
    Text: PMC-Sierra, Inc. APPLICATION NOTE ISSUE 1 PM7323 RCMP-200 ASYNCHRONOUS SRAM FOR RCMP-200 PM7323 ASYNCHRONOUS SRAM FOR RCMP-200 Issue 1: April 1, 1996 PMC-Sierra, Inc. 8501 Commerce Court, Burnaby, BC Canada V5A 4N3 604 668 7300 Proprietary and Confidential


    Original     		PDF PM7323 RCMP-200 PM7323 PMC-960338 SRAM timing CY7C1088 PM7322 PMC-940904 RCMP200

    EME-6300H

    Abstract: 6300H mos die CY7C1399 CY7C197 CY7C199
    Text: Qualification Report June, 1995 - QTP# 94465 Version 1.0 RAM2.8 TRANSISTOR FOR RAM2.5 PROCESS PRODUCT DESCRIPTION for qualification Information provided in this document is intended for generic qualification and technically describes the Cypress part supplied:


    Original     		PDF CY7C199 7C199C Jan/1995 MeC199 28-pin, 300-mil -1500V EME-6300H 6300H mos die CY7C1399 CY7C197 CY7C199

    CY62256LL-PC

    Abstract: VIC068A-GC VIC64-NC VIC64-UMB PALCE22V10-JI PALC16L8Q PLD VME A113 CY7B923 JESD22-A113
    Text: Cypress Semiconductor Product Reliability 1997 Published June, 1997 CYPRESS SEMICONDUCTOR PRODUCT RELIABILITY TABLE OF CONTENTS 1.0 OVERVIEW OF CYPRESS SEMICONDUCTOR TOTAL QUALITY MANAGEMENT SYSTEM. 1 2.0 ELECTRICAL AVERAGE OUTGOING QUALITY. 2


    Original     		PDF PALCE22V10-JC FLASH-FL22D CY62256LL-PC VIC068A-GC VIC64-NC VIC64-UMB PALCE22V10-JI PALC16L8Q PLD VME A113 CY7B923 JESD22-A113

    CXK581020

    Abstract: L7C109WC25 L7C109WI17 5962-89598 smd diode K10 smd transistor A6 3 MT5C1008 L7C109WI20 L7C108YMB25 L7C108DMB25
    Text: L7C108/109 128K x 8 Static RAM L7C108/109 DEVICES INCORPORATED 128K x 8 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION q 128K x 8 Static RAM with Chip Select Powerdown, Output Enable q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 17 ns maximum


    Original     		PDF L7C108/109 MIL-STD-883, CY7C108/109, IDT71024/71B024, MT5C1008, MCM6226A/62L26A, CXK581020 32-pin CXK581020 L7C109WC25 L7C109WI17 5962-89598 smd diode K10 smd transistor A6 3 MT5C1008 L7C109WI20 L7C108YMB25 L7C108DMB25

    7C109

    Abstract: CY7C109 ddgt A14C C106 cy7c109-45dmb cy7c109-35dmb
    Text: CYPRESS SEMICONDUCTOR 4 bE WM 'cSEMICONDUCTOR y p re ss D a ES&SbbB DG0b30b 1 E1CYP CY7C108 CY7C109 PRELIMINARY 131,072 x 8 Static R/W RAM Features Functional Description • H ighspeed — U a = 25 ns • CMOS for optimum speed/power • Low active power


    OCR Scan     		PDF 00Gb30b CY7C108 CY7C109 TheCY7C108 CY7C109 p9-45DC CY7C109-45PC CY7C109-45VC CY7C109-45DMB GG0b312 7C109 ddgt A14C C106 cy7c109-35dmb

    a9ah

    Abstract: No abstract text available
    Text: CY7C1088 128K x 9 Static RAM ADVANCED INFORMATION Features Functional Description • High speed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1020 mW • Low standby power — 250 mW • 2.0V data retention The CY7C1088 is a high-performance


    OCR Scan     		PDF 32-pin 400-mil CY7C1088 7C1088-12 7C1088-15 7C1088-20 7C1088-25 a9ah

    7C109-35

    Abstract: 7C108
    Text: K 'ß CY7C108 CY7C109 AD VAN CED IN F O R M A TIO N SEMICONDUCTOR 131,072 x 8 Static R/W RAM Features F unctional D escription • High speed T h e CY7C108 and CY7C109 are high-per­ form ance C M O S static R A M s organized as 131,072 words by 8 bits. Easy m em ory expansion is provided by an active L O W chip


    OCR Scan     		PDF CY7C108 CY7C109 8-00140-A 7C109-35 7C108

    Untitled

    Abstract: No abstract text available
    Text: ^ SS WS CYPRESS PRELIMINARY , .^= 131,072 x 8 Static R/W RAM SEMICONDUCTOR Features Functional Description • H ighspeed — tAA = 25 ns T h e CY 7C108 an d CY 7C109 are high-perform anceC M O S static R A M s organized as 131,072 w ords by 8 bits. Easy m em ory ex­


    OCR Scan     		PDF 7C108 7C109 CY7C109

    232Z2

    Abstract: 109kc
    Text: — “ “ _ ._——— L7C108/109 jtv î;fs incorpüha i - . 12 8K x 8 Static R A M Low Power DESCRIPTION FEATURES □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 15 ns maximum


    OCR Scan     		PDF L7C108/109) L7C108-L/109-L) MIL-STD-883, CY7C108/109, IDT71024/71B024, V1T5C1008, MCM6226A 62L26A, CXK581020 32-pin 232Z2 109kc

    98-LD

    Abstract: No abstract text available
    Text: L7C1 n a/m g L 7 C 1 0 3 /1 OS IJbVIÜI-S INuuHHÜKA I H □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □Auto-Powerdown Design □Advanced CMOS Technology □High Speed — to 10 ns maximum □Low Power Operation Active: 570 mW typical at 15 ns


    OCR Scan     		PDF MIL-STD-883, CY7C108/109, IDT71024/71B024, MT5C1008, MCM6226A/62L26A, CXK581020 32-pin 98-LD

    uPD23C4000

    Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A


    OCR Scan     		PDF 64Kx4 KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 64Kx8 256KX4 KM428C64 uPD23C4000 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000

    Untitled

    Abstract: No abstract text available
    Text: I 7 n in a /in Q v wms _mt — DEVICES INCORPORATED FEATURES 1 0 8 / 1 0 9 128K x 8 Static RAM Low Power DESCRIPTION □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 17 ns maximum


    OCR Scan     		PDF MIL-STD-883, CY7C108/109, IDT71024/71B024, MT5C1008, MCM6226A/62L26A, CXK581020 32-pin L7C109 L7C109KC25*

    Untitled

    Abstract: No abstract text available
    Text: £ O Q l C D E V IC E S IN C O R P O R A T E D L 7 C 1 0 8 / 1 0 9 128K x 8 Static RAM Low Power ESCRIPTION □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ □ □ □ Auto-Powerdown Design Advanced CMOS Technology High Speed — to 17 ns maximum


    OCR Scan     		PDF MIL-STD-883, CY7C108/109, IDT71024/71B024, MT5C1008, MCM6226A/62L26A, CXK581020 32-pin 32-pin 108/9-J

    CY7C1088

    Abstract: No abstract text available
    Text: CYPRESS Features • • C M O S for optim um speed/pow er Low active power — 1020 mW • Low standby power — 250 mW • 2.0V d ata retention — 100 ^W • A vailable in p la stic 32-p in 4 00-m il SO J • A utom atic power-down when d eselected •


    OCR Scan     		PDF 32-pin 400-miI CY7C1088 7C1088â

    EDI88128C-100

    Abstract: EDI88128C-35 EDI88128C-55 EDI88128C-70 ED188130LPS im628 ED188130C Hitachi Scans-001 ED188130CS-20 ed188130cs
    Text: - IM ïSÆEffl m £ tt £ CC CMOS x TAAC •ax ns) TCAC ■ax (ns) TOE nax (ns) TOH nin (ns) RAM ( 1 3 1 , 0 7 2 x 8 ) S t a t i c * a y / TOD ■ax (ns) TffP »in (ns) m 14 TDS nin (ns) TDH sin (ns) TIW) min (ns) TttR nax (ns) VDD o r V C C (V) IW> max


    OCR Scan     		PDF 072x8) CY7CI08/9-25 CY7C108/9-35 CY7C108/9-45 HM628128LP/FP-7SL IM628128LP/FP-8SL HI628128LP/T-10 IM628128LP/M2 HM628128LP/T-7 HM628128LP/T-8 EDI88128C-100 EDI88128C-35 EDI88128C-55 EDI88128C-70 ED188130LPS im628 ED188130C Hitachi Scans-001 ED188130CS-20 ed188130cs

    a1012L

    Abstract: No abstract text available
    Text: L Ö Q IC L7C108/109 128K x 8 Static RA M D E V I C E S INCORHHHATE ' DESCRIPTION FEATURES □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 17 ns maximum □ Low Power Operation


    OCR Scan     		PDF L7C108/109 L7C108 L7C109 TheL7C108has reduc00 03/21/95-LDS 108/9-F a1012L