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    Abstract: No abstract text available
    Text: PROCESS CPQ166 TRIAC 25 Amp, 600 Volt TRIAC Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 165 x 165 MILS Die Thickness 9.1 MILS ± 0.4 MILS MT1 Bonding Pad Area 134 x 100 MILS Gate Bonding Pad Area 28 x 28 MILS Top Side Metalization Al - 45,000Å


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    PDF CPQ166 CQDD-25M CQ220-25M CQ220-25MFP 29-April