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    CPC3710 Search Results

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    CPC3710 Price and Stock

    Littelfuse Inc CPC3710CTR

    MOSFET N-CH 250V SOT89
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    DigiKey CPC3710CTR Cut Tape 543 1
    • 1 $0.87
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    CPC3710CTR Digi-Reel 543 1
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    CPC3710CTR Reel 1,000
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    Newark CPC3710CTR Reel 1,000
    • 1 $0.394
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    IXYS Integrated Circuits Division CPC3710C

    MOSFET N-CH 250V SOT89
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    DigiKey CPC3710C Tube
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    IXYS Corporation CPC3710CTR

    MOSFETs N Ch Dep Mode FET 250V
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    Mouser Electronics CPC3710CTR 2,814
    • 1 $0.85
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    TTI CPC3710CTR Reel 3,000 1,000
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    TME CPC3710CTR 1
    • 1 $1.177
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    New Advantage Corporation CPC3710CTR 2,017 1
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    Others CPC3710CTR

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    Chip 1 Exchange CPC3710CTR 3,272
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    IXYS Integrated Circuits Division CPC3710CTR

    MOSFET DIS.220mA 250V N-CH SOT89 DEPLETION SMT
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    Ozdisan Elektronik CPC3710CTR 2,517
    • 1 $0.69782
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    • 1000 $0.6068
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    CPC3710 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CPC3710C Clare N Channel Depleti Original PDF
    CPC3710C IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH DEPLETION 250V SOT89 Original PDF
    CPC3710CTR IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH DEPLETION 250V SOT89 Original PDF

    CPC3710 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    cpc3710

    Abstract: CPC3710C J-STD-033
    Text: CPC3710 N-Channel Depletion-Mode FET PRELIMINARY BVDSX/ BVDGX 250VP RDS on (max) 10 IDSS (min) Package 220mA SOT-89 Features • • • • • • Low RDS(on) at Cold Temperatures RDS(on) 10 max. at 25ºC High Input Impedance High Breakdown Voltage: 250VP


    Original     		PDF CPC3710 250VP 220mA OT-89 CPC3710 CPC37mplied DS-CPC3710-R00B CPC3710C J-STD-033

    Untitled

    Abstract: No abstract text available
    Text: CPC3710 N-Channel Depletion-Mode FET PRELI M I N ARY BVDSX/ BVDGX 250VP RDS on (max) 10Ω IDSS (min) Package 220mA SOT-89 Features • • • • • • Low RDS(on) at Cold Temperatures RDS(on) 10Ω max. at 25ºC High Input Impedance High Breakdown Voltage: 250VP


    Original     		PDF CPC3710 250VP 220mA OT-89 CPC3710 DS-CPC3710-R00B

    250VP

    Abstract: No abstract text available
    Text: CPC3710 N-Channel Depletion-Mode FET PRELIMINARY V BR DSX / V(BR)DGX RDS(on) (max) IDSS (min) Package 250VP 10 220mA SOT-89 Features • • • • • • Low RDS(on) at Cold Temperatures Low On-Resistance: 10 max. at 25ºC High Input Impedance High Breakdown Voltage: 250VP


    Original     		PDF CPC3710 250VP 220mA OT-89 CPC3710 DS-CPC3710-R00D

    FET SOT-89 N-Channel

    Abstract: CPC3710C ignition module sot89 fet
    Text: CPC3710C N-Channel Depletion-Mode Vertical DMOS FETs BVDSX/ BVDGX 250V RDS ON (max) 10Ω IDSS (min) Package 220mA SOT-89 Description The CPC3710C is an N-channel depletion mode field effect transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. Third


    Original     		PDF CPC3710C 220mA OT-89 CPC3710C DS-CPC3710C-R00A FET SOT-89 N-Channel ignition module sot89 fet

    CPC3710

    Abstract: No abstract text available
    Text: CPC3710 250V N-Channel Depletion-Mode FET INTEGRATED CIRCUITS DIVISION V BR DSX / V(BR)DGX RDS(on) (max) IDSS (min) Package 250VP 10 220mA SOT-89 Features • • • • • • Low RDS(on) at Cold Temperatures Low On-Resistance: 10 max. at 25ºC High Input Impedance


    Original     		PDF CPC3710 250VP 220mA OT-89 CPC3710 DS-CPC3710-R02

    Untitled

    Abstract: No abstract text available
    Text: CPC3710 N-Channel Depletion-Mode FET INTEGRATED CIRCUITS DIVISION V BR DSX / V(BR)DGX RDS(on) (max) IDSS (min) Package 250VP 10 220mA SOT-89 Features • • • • • • Low RDS(on) at Cold Temperatures Low On-Resistance: 10 max. at 25ºC High Input Impedance


    Original     		PDF CPC3710 250VP 220mA OT-89 CPC3710 DS-CPC3710-R01

    f 0472 N-Channel MOSFET

    Abstract: No abstract text available
    Text: CPC3710 N-Channel Depletion-Mode FET INTEGRATED CIRCUITS DIVISION V BR DSX / V(BR)DGX RDS(on) (max) IDSS (min) Package 250VP 10 220mA SOT-89 Features • • • • • • Low RDS(on) at Cold Temperatures Low On-Resistance: 10 max. at 25ºC High Input Impedance


    Original     		PDF CPC3710 250VP 220mA OT-89 CPC3710 DS-CPC3710-R00E f 0472 N-Channel MOSFET

    IXEP1400

    Abstract: CPC1706 CPC1020N
    Text: Semiconductor Product Catalog IXYS Integrated Circuits Division IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division designs, manufactures, and markets a wide variety of semiconductor devices, and is a major provider of optically isolated electronic products.


    Original     		PDF CH-2555 N1016, IXEP1400 CPC1706 CPC1020N

    LCA717

    Abstract: 0-10v to 4-20ma cpc9909 IX2127 PM1206 en50130-4 CPC1020 CPC1002N deutsch relays inc 35v, 1amp smps circuits
    Text: Clare, a wholly owned subsidiary of IXYS Corporation, located 20 miles north of Boston, Massachusetts, USA, designs, manufactures, and markets a wide variety of semiconductor devices. Clare’s wafer fabrication facility features a 600V BCDMOS process on a bonded-wafer, silicon-on-insulator, trench-isolated


    Original     		PDF MX887P MX844 12-Bit MX887D LCA717 0-10v to 4-20ma cpc9909 IX2127 PM1206 en50130-4 CPC1020 CPC1002N deutsch relays inc 35v, 1amp smps circuits

    cpc9909

    Abstract: 6-pin smps power control ic cpc1943 MXHV9910 0-10v to 4-20ma Line Driver SHDSL IX2127 CPC1230 opamps catalog deutsch relays inc
    Text: Clare, a wholly owned subsidiary of IXYS Corporation, located 20 miles north of Boston, Massachusetts, USA, designs, manufactures, and markets a wide variety of semiconductor devices. Clare’s wafer fabrication facility features a 600V BCDMOS process on a bonded-wafer, silicon-on-insulator, trench-isolated


    Original     		PDF MX887P MX844 12-Bit MX887D cpc9909 6-pin smps power control ic cpc1943 MXHV9910 0-10v to 4-20ma Line Driver SHDSL IX2127 CPC1230 opamps catalog deutsch relays inc

    IXEP1400

    Abstract: CPC7601 CPC1907B CPC1106N CPC1004N CPC1006N CPC1009N CPC1114N CPC1333 IX21844
    Text: Semiconductor Product Catalog IXYS Integrated Circuits Division IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division designs, manufactures, and markets a wide variety of semiconductor devices, and is a major provider of optically isolated electronic products.


    Original     		PDF CH-2555 N1016, IXEP1400 CPC7601 CPC1907B CPC1106N CPC1004N CPC1006N CPC1009N CPC1114N CPC1333 IX21844

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    LBA716

    Abstract: IXDD630 DARLINGTON TRANSISTOR ARRAY V/CPC3701 CPC1006N CPC1014N CPC1019N CPC1219
    Text: Semiconductor Product Catalog IXYS Integrated Circuits Division In April, 2012, Clare, Inc., officially became IXYS Integrated Circuits Division. IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division


    Original     		PDF N1016, CH-2555 LBA716 IXDD630 DARLINGTON TRANSISTOR ARRAY V/CPC3701 CPC1006N CPC1014N CPC1019N CPC1219

    A NEW GENERATION OF HIGH PERFORMANCE MOSFET DRIVERS FEATURES HIGH CURRENT, HIGH SPEED OUTPUTS

    Abstract: CPC1225N
    Text: 9  # #0 Clare 2009/2010 Product Catalog Semiconductor Products Complete data sheets are available for downloading at Clare’s website: http://www.clare.com Clare, a wholly owned subsidiary of IXYS Corporation, located 20 miles north of Boston, Massachusetts, USA, designs,


    Original     		PDF N1016, D-68623 CH-2555 A NEW GENERATION OF HIGH PERFORMANCE MOSFET DRIVERS FEATURES HIGH CURRENT, HIGH SPEED OUTPUTS CPC1225N