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Catalog Datasheet	MFG & Type	PDF	Document Tags
Mosfet n-channel Abstract: Small Signal MOSFET Text: PROCESS CP359R Small Signal MOSFET N-Channel Enhancement-Mode MOSFET Chip PROCESS DETAILS Die Size 9.1 x 9.1 MILS Die Thickness 3.9 MILS Gate Bonding Pad Area 2.5 MILS DIAMETER Source Bonding Pad Area 3.9 x 3.9 MILS Top Side Metalization Al-Si - 30,000Å Back Side Metalization	Original	PDF	CP359R CMRDM3590 13-May Mosfet n-channel Small Signal MOSFET

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Mosfet n-channel

Abstract: Small Signal MOSFET
Text: PROCESS CP359R Small Signal MOSFET N-Channel Enhancement-Mode MOSFET Chip PROCESS DETAILS Die Size 9.1 x 9.1 MILS Die Thickness 3.9 MILS Gate Bonding Pad Area 2.5 MILS DIAMETER Source Bonding Pad Area 3.9 x 3.9 MILS Top Side Metalization Al-Si - 30,000Å Back Side Metalization

Original

PDF

CP359R CMRDM3590 13-May Mosfet n-channel Small Signal MOSFET