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    CNZ2152 Search Results

    CNZ2152 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CNZ2152 Panasonic Reflective Photosensor Original PDF
    CNZ2152 Panasonic Reflective Photosensor Original PDF

    CNZ2152 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SM 8002

    Abstract: ON2152 CNZ2152 ic iR light control SM 8002 C
    Text: Reflective Photosensors Photo Reflectors CNZ2152 (ON2152) Reflective photosensor Non-contact point SW, object sensing Unit: mm 3.2±0.2 • Overview Mark for indicating LED side φ1.5 ■ Applications ■ Absolute Maximum Ratings Ta = 25°C Parameter Input (Light Reverse voltage


    Original
    PDF CNZ2152 ON2152) PRSTR104-001 SM 8002 ON2152 CNZ2152 ic iR light control SM 8002 C

    Reflective photosensor response time

    Abstract: high sensitivity reflective phototransistor CNZ2152
    Text: Reflective Photosensors Photo Reflectors CNZ2152 Reflective Photosensor Overview 8.0±0.2 3.2±0.2 CNZ2152 is a photosensor detecting the change of reflective light in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity Si phototransistor


    Original
    PDF CNZ2152 CNZ2152 Reflective photosensor response time high sensitivity reflective phototransistor

    SM 8002 C

    Abstract: SM 8002 high sensitivity reflective phototransistor ON2152 CNZ2152
    Text: Reflective Photosensors Photo Reflectors CNZ2152 (ON2152) Reflective photosensor Non-contact point SW, object sensing Unit: mm 3.2±0.2 • Overview • High sensitivity Parameter Input (Light Reverse voltage emitting diode) Forward current Power dissipation *1


    Original
    PDF CNZ2152 ON2152) PRSTR104-001 SM 8002 C SM 8002 high sensitivity reflective phototransistor ON2152 CNZ2152

    high sensitivity reflective phototransistor

    Abstract: ON2152 CNZ2152
    Text: Reflective Photosensors Photo Reflectors CNZ2152 (ON2152) Reflective Photosensor Overview 8.0±0.2 3.2±0.2 CNZ2152 is a photosensor detecting the change of reflective light in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity Si phototransistor


    Original
    PDF CNZ2152 ON2152) CNZ2152 high sensitivity reflective phototransistor ON2152

    ON1120

    Abstract: ON1112 59 ON2179 CNZ1120 VISIBLE LIGHT PHOTOdarlington TRANSISTOR ON3171 ON1387 ON1113 reflective photocoupler CNA1006N
    Text: Characteristics List • Photocoupler ■ Hologram Unit 17 Photocoupler ■ Photointerrupter Absolute Maximum Ratings Electro • Optical Characteristics Ta = 25°C Part No. IF mA VCEO (V) IF (mA) CNA1006N IC min. (mA) ICEO max. (µA) t r , tf typ. (µs)


    Original
    PDF CNA1007H CNA1006N CNA1009H ON1024) CNA1011K ON1113) CNZ3132 ON3132) CNZ3133 ON3133) ON1120 ON1112 59 ON2179 CNZ1120 VISIBLE LIGHT PHOTOdarlington TRANSISTOR ON3171 ON1387 ON1113 reflective photocoupler CNA1006N

    ON1501

    Abstract: LN29RCPX LNG242RDA ON1120 CNZ1215 LN21RPH-TA ON1024 ON3131 LN39GCPX on1128
    Text: -y 7‘LED Surface Mounting Chip LED GW Bi-Color Type Type No. Lighting Color LN2162C68— TR ÎÊ *\fÎi^5 È Î§ Pure Green Orange Absolute Maximum Ratings (Ta=25"C) L ig h tin g C o lo r PD (m W ) 1 F( m A ) l FP( m A ) * V r (V) T o p r ( iC ) P u re G re e n


    OCR Scan
    PDF LN2162C68-- LNG221RFR LNG221RKR LNG222RFR LNG222RKR LNG224RFR LNG224RKR LNG229RFR LNG233RFR LNG240CDAE ON1501 LN29RCPX LNG242RDA ON1120 CNZ1215 LN21RPH-TA ON1024 ON3131 LN39GCPX on1128