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Abstract: No abstract text available
Text: CMJ10005 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)400 V(BR)CBO (V) I(C) Max. (A)20 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.400
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CMJ10005
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FEME
Abstract: CMJ10004 ADE 350 C1001 C1002 cmj1000
Text: CMJ 10004 CMJ 10005 NPN POWER DARLINGTON C1001 C 1002 20 AMPERE GEOMETRY 513 TO-3 • High VCEO to 450V • High Gain • Fast Switching —?JCr 4» SYM KX CMJ100M CMJ10005 C4001 C1002 450 400 400 VCEO 350 450 450 450 V cex 400 500 500 500 450 8.0 8.0 8.0
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C1001
C1002
100KHZ
CMJ10004
Mj100tt
FEME
CMJ10004
ADE 350
C1002
cmj1000
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CMJ10005
Abstract: LB400M ADE 617
Text: LEDYNE COMPONENTS 0^17 302 ÜQÛbSHM T • 2ÔE D TCMJ '33-a* 7 10004 NPN POWER DARLINGTON CMJ 10005 C1001 C 1002 20 AMPERE GEOMETRY 513 • High VCEO to 450V • High Gain • Fast Switching TO-3 r - iSS 4» MAXIMUM RATINGS PARAMfTIR SYMBOL CMJ10004 CMJ10005 C1001 C1002
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CMJ10004
CMJ10005
C1001
C1002
LB400M
ADE 617
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