Untitled
Abstract: No abstract text available
Text: MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA Product Preview 256K x 16 CMOS Dynamic RAM Fast Page Mode - 1 CAS, 2 Write Enables The M CM54170B is a 0.6n CMOS high-speed, dynam ic random access memory. It is organized as 262,144 sixteen-bit words and fabricated with CMOS siiicon-gate pro
|
OCR Scan
|
CM54170B
MCM54170B
400-mil
100-mil
40-Pln
400-mll
475-mll
40/44-Pln
|
PDF
|
A9RV
Abstract: No abstract text available
Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA CM54170B MCM5L4170B MCM5V4170B Product Preview 256K x 16 CMOS Dynamic RAM Fast Page Mode - 1 CAS, 2 Write Enables The CM54170B is a 0.6n CMOS high-speed dynamic random access memory. It is organized as 262,144 sixteen-bit words and fabricated with CMOS siiicon-gate process
|
OCR Scan
|
MCM54170B
54170BJ70
54170BJ80
54170BJ10
54170BT70
54170BT80
54170BT10
54170BJ70R
54170BJ80R
A9RV
|
PDF
|