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    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB2*2-6L-A Plastic-Encapsulate MOSFETS CJLJF3117P DFNWB2*2-6L-A P-Channel Power MOSFET FEATURE  Featuring a MOSFET and Schottky Diode  Independent Pinout Privides Circuit Design Flexibility  Low Profile <0.8mm for Easy Fit in Thin Environment


    Original     		PDF CJLJF3117P

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB2x2-6L-A Power Management MOSFETs-Schottky CJLJF3117P P-channel MOSFET and Schottky Barrier Diode DFNWB2×2-6L-A FEATURES z Independent Pinout to Each Device to Ease Circuit Design z High Current Schottky Diode


    Original     		PDF CJLJF3117P CJ2301 RB551V-30