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    CGHV22100 Search Results

    CGHV22100 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CGHV22100F Cree RF FETs, Discrete Semiconductor Products, MOSF RF 125V 6A 2.2GHZ 440162 Original PDF
    CGHV22100-TB Cree RF FETs, Discrete Semiconductor Products, MOSF RF 125V 6A 2.2GHZ 440162 Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: CGHV22100 100 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22100 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22100 ideal for 1.8 - 2.2 GHz


    Original     		PDF CGHV22100 CGHV22100 CGHV22 GHV22100P

    Untitled

    Abstract: No abstract text available
    Text: CGHV22100 100 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22100 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22100 ideal for 1.8 - 2.2 GHz


    Original     		PDF CGHV22100 CGHV22100 CGHV22 GHV22100P

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGHV22100 100 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22100 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22100 ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is


    Original     		PDF CGHV22100 CGHV22100 CGHV22 GHV22100P

    Untitled

    Abstract: No abstract text available
    Text: CGHV22100 100 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22100 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22100 ideal for 1.8 - 2.2 GHz


    Original     		PDF CGHV22100 CGHV22100 CGHV22 GHV22100P

    HEADER RT

    Abstract: CGH35120
    Text: PRELIMINARY CGHV22100 100 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22100 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22100 ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is


    Original     		PDF CGHV22100 CGHV22100 CGHV22 GHV22100P CGHV22100-TB HEADER RT CGH35120

    CGHV22100

    Abstract: CGH35120 CGHV22 cree rf
    Text: PRELIMINARY CGHV22100 100 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22100 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22100 ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is


    Original     		PDF CGHV22100 CGHV22100 CGHV22 GHV22100P CGHV22100-TB CGH35120 cree rf