Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    CGH60060D Search Results

    SF Impression Pixel

    CGH60060D Price and Stock

    MACOM CGH60060D-GP4

    RF MOSFET HEMT 28V DIE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH60060D-GP4 Tray 50 10
    • 1 -
    • 10 $127.624
    • 100 $125.2625
    • 1000 $125.2625
    • 10000 $125.2625
    Buy Now
    Mouser Electronics CGH60060D-GP4 50
    • 1 -
    • 10 $120.29
    • 100 $120.25
    • 1000 $120.25
    • 10000 $120.25
    Buy Now
    Richardson RFPD CGH60060D-GP4 1
    • 1 $188.3
    • 10 $188.3
    • 100 $188.3
    • 1000 $188.3
    • 10000 $188.3
    Buy Now

    CGH60060D Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CGH60060D-GP4 Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 28V DIE Original PDF

    CGH60060D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CGH60060D

    Abstract: hemt .s2p 5609 transistor
    Text: CGH60060D 60 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60060D is a gallium nitride GaN High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift


    Original
    PDF CGH60060D CGH60060D CGH6006 hemt .s2p 5609 transistor

    5609 transistor

    Abstract: CGH60060D bonding wire cree
    Text: CGH60060D 60 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60060D is a gallium nitride GaN High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift


    Original
    PDF CGH60060D CGH60060D CGH6006 5609 transistor bonding wire cree

    CGH40025P

    Abstract: CGH40010P cgh60015 GaN ADS Gan hemt transistor x band cgh40120F cgh40045f CGH60015D CGH60060D CGH60030D cgh60120D
    Text: General Purpose Wide Bandgap Transistors Gallium Nitride GaN HEMTs for Broadband Applications Broadband performance - Enables high power, multi-octave bandwidth amplifiers This “general purpose” discrete device series features Cree’s GaN HEMTs. These unmatched packaged transistors


    Original
    PDF