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    CEM4410A

    Abstract: No abstract text available
    Text: CEM441OA M a rc h 1 9 9 8 N-Channel Enhancement Mode Field Effect Transistor FEATURES • 3 0 V , 10 A , R d s o n =1 1mfi R ds (o n )=20 itiQ @Vgs=1 0V. @Vgs=4.5V. • Super high dense cell design for extremely low R ds (on ). • High power and current handing capability.


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    CEM4410A 20itiQ CEM4410A PDF