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    ceF01N65

    Abstract: 650VVGS
    Text: CEP01N65/CEB01N65 CEF01N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON CEP01N65 650V 10.5Ω 1.3A ID @VGS 10V CEB01N65 650V 10.5Ω 1.3A 10V CEF01N65 650V 10.5Ω 1.3A d 10V D Super high dense cell design for extremely low RDS(ON).


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    PDF CEP01N65/CEB01N65 CEF01N65 CEP01N65 CEB01N65 O-263 O-220 O-220F O-220/263 100ms ceF01N65 650VVGS