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    Microchip Technology Inc BLX48

    POWER BJT
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    BLX48 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BLX48 Semelab Bipolar PNP Device in a Hermetically Sealed TO39 Metal Package Original PDF
    BLX48 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BLX48 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BLX48 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BLX48 Semelab Transistor Selection Guide Scan PDF
    BLX48 Solitron Devices Pro Electron Power Transistors Scan PDF
    BLX48R Semelab Bipolar PNP Device in a Hermetically Sealed TO39 Metal Package - Pol=PNP / Pkg=TO39 / Vceo=100 / Ic=5 / Hfe=30-250 / fT(Hz)=20M / Pwr(W)=18 Original PDF

    BLX48 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: BLX48R Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016)


    Original     		BLX48R O205AD) 17-Jul-02 PDF

    BLX48

    Abstract: No abstract text available
    Text: BLX48 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016) 0.53 (0.021)


    Original     		BLX48 O205AD) 1-Aug-02 BLX48 PDF

    Untitled

    Abstract: No abstract text available
    Text: BLX48 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016) 0.53 (0.021)


    Original     		BLX48 O205AD) 17-Jul-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: BLX48 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016) 0.53 (0.021)


    Original     		BLX48 O205AD) 19-Jun-02 PDF

    BLX48R

    Abstract: No abstract text available
    Text: BLX48R Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016)


    Original     		BLX48R O205AD) 1-Aug-02 BLX48R PDF

    Untitled

    Abstract: No abstract text available
    Text: BLX48R Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016)


    Original     		BLX48R O205AD) 19-Jun-02 PDF

    B0244A

    Abstract: 2SB531-0 B0296 2sc3659 B0196
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 >= 5 A, B0956 SOT3309 SOT3309 SOT3309 SOT3329 SOT3329 SOT3329 B05400 BLX48 BLX48 BLX48 B0956F BOX30 TIP513 TIP513 TIP513 TIP514 SFT501 (A) 2SB506A SFT503 (A) +:~~~~ 25 30 TIP523 TIP524 2SC2613 2SC2816


    Original     		B0956 OT3309 OT3329 B05400 BLX48 B0244A 2SB531-0 B0296 2sc3659 B0196 PDF

    BF689

    Abstract: 2N5651 BF272 2N5652 BF251 BFY82 BFY70 BF316 BF479 BFX36
    Text: STI Type: BF200 Notes: Polarity: NPN Power Dissipation: .15 Tj: 200 VCBO: 30 VCEO: 20 hFE min: 15 hFE max: hFE A: 3.0 VCE: VCE A: hfe: fT: 550 Case Style: TO-206AF/TO-72: Industry Type: BF200 STI Type: BF183 Notes: Polarity: NPN Power Dissipation: .15 Tj: 200


    Original     		BF200 O-206AF/TO-72: BF183 BF206 BF208 BF689 2N5651 BF272 2N5652 BF251 BFY82 BFY70 BF316 BF479 BFX36 PDF

    bd130

    Abstract: BDY57 BLX84 BD142 BLx18 13 6 npn BDY20 BDY29 BDY94 BLX36
    Text: IC VCEO Device Cont. Polarity MAX Type MAX VOLTS AMPS BD130 NPN 15.0 60 BD142 NPN 15.0 45 BDY20 NPN 15.0 60 BDY29 NPN 30.0 75 BDY37 NPN 16.0 140 BDY38 NPN 6.0 40 BDY39 NPN 15.0 60 BDY55 NPN 15.0 60 BDY56 NPN 15.0 120 BDY57 NPN 25.0 80 BDY58 NPN 25.0 125


    Original     		BD130 BD142 BDY20 BDY29 BDY37 BDY38 BDY39 BDY55 BDY56 BDY57 BLX84 BLx18 13 6 npn BDY94 BLX36 PDF

    BFY83

    Abstract: BLY48
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o BFT37A CECC BFT39 BFT40 BFT44 BFT45 BFT46CSM BFT48 BFT49 BFT53 BFT54 BFT57 BFT58 BFT59 BFT60 BFT61 BFT62 BFT69 BFT70 BFT71 BFT79 BFT80 BFT81 BFW16 BFW43 BFW44 BFX11 BFX15 BFX17 BFX29 BFX30 BFX34


    OCR Scan     		BFT37A BFT39 BFT40 BFT44 BFT45 BFT46CSM BFT48 BFT49 BFT53 BFT54 BFY83 BLY48 PDF

    BFX36

    Abstract: 110H BFX81 BFY64 BFY84 BFT53 BFT54 BFT57 BFT58 BFT59
    Text: Ô133107 4ÔE D G0G0451 SEMELABI 33S ISMLB SEMELAB LTD BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rei Code BFTW REQ REQ REQ HE HE HE HR HE HR HR HE HE HR HE HE EEQ REQ REQ HR HR REQ EEQ KEQ CECC HR KEQ EEQ EEQ EEQ EEQ REQ HE HR HK HE


    OCR Scan     		G0G0451 25min 10/30m BFT53 10min BFT54 30min BFT57 BFX36 110H BFX81 BFY64 BFY84 BFT58 BFT59 PDF

    BFX36

    Abstract: 2N3904DCSM 2N3904D 2N3680 BFT39 2N2222ADCSM BFX11 BFY84 BLY11 BFT40
    Text: 37E D SEMELAB LTD 31331B7 OOOODTb fl jl S E M E L A B MANUFACTURING! • c BS/CECC Polarity Package v CEO cont h F E BFT37 BFT39 BFT40 BFT41 BFT57 BS-0 BS-0 BS-0 BS-0 BS-0 PNP NPN NPN NPN NPN T039 T039 T039 T039 T018 100 80 60 50 160 5 1 1 1 0.2 50-200 250 typ


    OCR Scan     		fll331fl7 BFT37 BFT39 BFT40 BFT41 BFT57 BFT58 BFT59 BFT60 BFT61 BFX36 2N3904DCSM 2N3904D 2N3680 2N2222ADCSM BFX11 BFY84 BLY11 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF

    APY12

    Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
    Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP


    OCR Scan     		Edition-1978) Ausgabe-1978) BS3934 SO-26 OT-114 NS371 APY12 BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367 PDF