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    BLF6G22-45; Search Results

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    BLF6G22-45; Price and Stock

    Rochester Electronics LLC BLF6G22-45,135

    RF MOSFET LDMOS 28V CDFM2
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    DigiKey BLF6G22-45,135 Bulk 142 6
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    • 100 $54.92
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    Ampleon BLF6G22-45,112

    RF MOSFET LDMOS 28V CDFM2
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    DigiKey BLF6G22-45,112 Tray
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    Ampleon BLF6G22-45,135

    RF MOSFET LDMOS 28V CDFM2
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    DigiKey BLF6G22-45,135 Reel
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    Rochester Electronics BLF6G22-45,135 142 1
    • 1 $55.45
    • 10 $55.45
    • 100 $52.12
    • 1000 $47.13
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    Ampleon BLF6G22-45

    Power LDMOS Transistor N-Channel 65V 3-Pin CDFM T/R - Tape and Reel (Alt: BLF6G22-45,135)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas BLF6G22-45 Reel 4 Weeks 7
    • 1 $55.45
    • 10 $55.45
    • 100 $49.64
    • 1000 $44.89
    • 10000 $44.89
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    NXP Semiconductors BLF6G22-45,112

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    Bristol Electronics BLF6G22-45,112 151
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    Quest Components BLF6G22-45,112 48
    • 1 $67.54
    • 10 $67.54
    • 100 $54.032
    • 1000 $54.032
    • 10000 $54.032
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    BLF6G22-45; Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BLF6G22-45 NXP Semiconductors Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 13 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 2.5 W; Package material: SOT608A ; Power gain: 18.5 dB Original PDF
    BLF6G22-45 NXP Semiconductors BLF6G22 - TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-3, FET RF Power Original PDF
    BLF6G22-45,112 Ampleon USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 18.5DB SOT608A Original PDF
    BLF6G22-45,135 Ampleon USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 18.5DB SOT608A Original PDF
    BLF6G22-45,112 NXP Semiconductors Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 13 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 2.5 W; Package material: SOT608A ; Power gain: 18.5 dB; Package: SOT608A (CDFM2); Container: Blister pack Original PDF
    BLF6G22-45,112 NXP Semiconductors BLF6G22 - TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-3, FET RF Power Original PDF
    BLF6G22-45,135 NXP Semiconductors Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 13 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 2.5 W; Package material: SOT608A ; Power gain: 18.5 dB; Package: SOT608A (CDFM2); Container: Tape reel smd Original PDF
    BLF6G22-45,135 NXP Semiconductors BLF6G22 - TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-3, FET RF Power Original PDF