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    BLF241 Search Results

    BLF241 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BLF241 Philips Semiconductors HF/VHF Power MOS Transistor Original PDF
    BLF241 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BLF241 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BLF241 Unknown FET Data Book Scan PDF
    BLF241E Philips Semiconductors HF/VHF Power MOS Transistor Original PDF

    BLF241 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BLF241 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)65 V(BR)GSS (V)20 I(D) Max. (A)800m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)8.75# Minimum Operating Temp (øC)


    Original     		PDF BLF241 Junc-Case20

    SOT123 Package

    Abstract: SOT123 SOT-123 BFS22A SOT121 Package BFQ43 BFQ43 datasheet BLY93 BLX15 bfq34 application note
    Text: DISCRETE SEMICONDUCTORS DATA SHEET Selection guide RF Power Transistors for HF and VHF 1995 Nov 21 File under Discrete Semiconductors, SC08a Philips Semiconductors RF Power Transistors for HF and VHF Selection guide INTRODUCTION The following tables represent our complete range of bipolar and MOS transmitting transistors, grouped according to the


    Original     		PDF SC08a BLV10 OT123 BLY87C/01 SCD45 SOT123 Package SOT123 SOT-123 BFS22A SOT121 Package BFQ43 BFQ43 datasheet BLY93 BLX15 bfq34 application note

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philips S em iconductors HF/VHF power MOS transistor FEATURES BLF241I-: PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability • Withstands full load mismatch. DESCRIPTION Silicon N-channel enhancement


    OCR Scan     		PDF BLF241I-: O-39/3) BLF241E RA385

    plji

    Abstract: transistor C4 016 LM 2222 2222 kn a 2222-581 AI 757 BLF241 UBB777
    Text: Philips Semiconductors_ Product specification HF/VHF power MOS transistor SbE J> m pLJILIPS INTERNATIONAL FEATURES • • • • • BLF241 711DflSb 00437bfc. 453 • PHIN PIN CONFIGURATION 7 “ 3 ^ " " 0 High power gain Easy power control


    OCR Scan     		PDF BLF241 711Gfl5ti 00M37bfc. MSB009' MBB072-S BLF24Â 0Q43774 plji transistor C4 016 LM 2222 2222 kn a 2222-581 AI 757 BLF241 UBB777

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification HF/VHF power MOS transistor FEATURES BLF241 PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Withstands full load mismatch • Gold metallization ensures excellent reliability.


    OCR Scan     		PDF BLF241 7Z21747

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors bbS3^31 HF/VHF power MOS transistor — ^ — — FEATURES QDBTTS? H lfl APX Product specification BLF241E N AUER PHILIPS/DISCRETE b^E D PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability


    OCR Scan     		PDF BLF241E O-39/3) MBA379

    transistor tt 2222

    Abstract: transistor tt 2222 vertical BLF241 b551a Philips 2222-581 UBB777 MBB072 2222 341
    Text: Philips Semiconductors 1^53^31 4G5 IAPX HF/VHF power MOS transistor Product specification BLF241 N AMER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Withstands full load mismatch • Gold metallization ensures


    OCR Scan     		PDF bbS3T31 BLF241 MBB072' MSB009-1 7Z21747 transistor tt 2222 transistor tt 2222 vertical BLF241 b551a Philips 2222-581 UBB777 MBB072 2222 341

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors bb53T31 002*^ 16 HQS • APX Product specification HF/VHF power MOS transistor — BLF241 — N AflER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Withstands full load mismatch


    OCR Scan     		PDF bb53T31 BLF241

    philips resistor 2322

    Abstract: 2322 151 BLF241E 2322 151 PHILIPS Philips 2222 114 capacitor ETD 41 035 itt 2222 hf transistor 12W 02 transistor philips potentiometer 2322
    Text: Philips S em iconductors B l b b 5 3 T 31 0 0 2^^27 4 1 fl APX P roduct specification HF/VHF power MOS transistor — ^ — FEATURES BLF241E N AMER PHILIPS/DISCRETE b*lE D PIN CONFIGURATION • High power gain • Easy power control • Gold metallization


    OCR Scan     		PDF bbS3131 DD2TT27 BLF241E O-39/3) MBG072 MSB009- MBA379 philips resistor 2322 2322 151 BLF241E 2322 151 PHILIPS Philips 2222 114 capacitor ETD 41 035 itt 2222 hf transistor 12W 02 transistor philips potentiometer 2322

    BLF241

    Abstract: BLF241E 2322 653 71005 International Power Sources transistor-BLF241E
    Text: Philips Semiconductor» HF/VHF power MOS transistor PHILIPS INTERNATIONAL 5 faE ì> M 3*1"0 7 BLF241E 711DflSb 0DM377S 4bb H P H I N PIN CONFIGURATION FEATURES • • • • • J- High power gain Easy power control Gold metallization Good thermal stability


    OCR Scan     		PDF T-37-07 BLF241E 711005b 0DM377S O-39/3) 711QflBb D0M37fi3 BLF241 BLF241E 2322 653 71005 International Power Sources transistor-BLF241E

    bf0262a

    Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
    Text: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A


    OCR Scan     		PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A bf0262a BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    BLY32

    Abstract: blf278 108 amplifier Philips Application BLX15 RF Power Amplifiers bgy55 blw95 BLF543 BFQ43 BLW33 blf177 108 amplifier
    Text: 83 RF/Microwave Devices Video Amplifiers Video Amplifier Line-Ups Application Preamp Stage B & W high resolution colour high resolution OM3016 OM925 OM975 OM3026 OM925 OM975 Output Stage OM976 Wideband Transistors for Application in Video Output Amplifiers in Monitors


    OCR Scan     		PDF OM3016 OM3026 OM925 OM925 OM975 OM976 BFQ231 BFQ231A BFQ251 BLY32 blf278 108 amplifier Philips Application BLX15 RF Power Amplifiers bgy55 blw95 BLF543 BFQ43 BLW33 blf177 108 amplifier

    MTP50N05E

    Abstract: MTP25N10E MTP50N05 MTP40N06M MTP50N05EL SOT-123 MTP25N06L MTP40N06EL MTP25N05 MTP25N10
    Text: - 290 - X£ §y € Vd s or Vd g Vg s % V (V) ±20 ±15 ±20 ±20 ±15 *± * MOT MOT MOT MOT MOT N N N MTP25N10 MTP25N10E MTP30N05E MOT MOT MOT N N N 100 ± 2 0 100 ± 2 0 50 ± 2 0 MTP3ÛNÛ6EL MTP30N08M MTP35NÛ6E MTP36NÛ6E MTP40N05E MTP40N06EL MTP40N06M


    OCR Scan     		PDF MTP25N05E O-220AB MTP25N05L MTP25N06 MTP25N06E BLF175 BLF22I T0-39 MTP50N05E MTP25N10E MTP50N05 MTP40N06M MTP50N05EL SOT-123 MTP25N06L MTP40N06EL MTP25N05 MTP25N10

    FET BFW10

    Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
    Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI


    OCR Scan     		PDF BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11

    sot123 package

    Abstract: BLF543 BLF221 sot 123 blf246b flange SOT-123
    Text: 65 RF/Microwave Devices RF Power MOS Transistors cont. Type No. Package Outline Load Power (W) V DS (V) f (MHz) Source Gain (dB) 28 28 28 28 28 50 28 28 50 28 50 28 50 28 50 175 175 175 175 175 108 175 108 108 108 108 175 108 175 108 14 typ 13 13 13 14 19 typ


    OCR Scan     		PDF BLF241 BLF242 BLF244 BLF245 BLF245B BLF175 BLF246B BLF246 BLF276 BLF147 sot123 package BLF543 BLF221 sot 123 flange SOT-123

    Untitled

    Abstract: No abstract text available
    Text: Concise Catalogue 1996 Philips Semiconductors DISCRETE SEMICONDUCTORS RF power transistors RF & MICROWAVE SEMICONDUCTORS & MODULES RF POWER MOS TRANSISTORS type number PL PEP ^DS (W) (V) G p (dB) package 20.1) 23 20.1) 17 20 SOT123 SOT 123 SOT121 SOT121


    OCR Scan     		PDF OT123 OT121 BLF145 BLF175

    TXD10K40

    Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
    Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40


    OCR Scan     		PDF bbS3131 BLU52 1N321 BYW56 1N321A BLV97 1N322 TXD10K40 TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G