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    BFR96 Datasheets (26)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BFR96 Advanced Power Technology RF & MICROWAVE DISCRETE LOW POWER TRANSISTOR Original PDF
    BFR96 Advanced Power Technology RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Original PDF
    BFR96 Advanced Semiconductor Transistor Original PDF
    BFR96 Microsemi RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Original PDF
    BFR96 Philips Semiconductors NPN 5 GHz Wideband Transistor Original PDF
    BFR96 Motorola The European Selection Data Book 1976 Scan PDF
    BFR96 Motorola European Master Selection Guide 1986 Scan PDF
    BFR96 Mullard Quick Reference Guide 1977/78 Scan PDF
    BFR96 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BFR96 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BFR96 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BFR96 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BFR96 Philips Components Philips Data Book Scan Scan PDF
    BFR96 Philips Semiconductors Plastic RF Transistors Scan PDF
    BFR96 SGS-Ates Shortform Data Book 1977/78 Short Form PDF
    BFR96 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    BFR96G Advanced Power Technology RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Original PDF
    BFR96H Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFR96S Philips Semiconductors NPN 5 GHz Wideband Transistor Original PDF
    BFR96S Siemens Cross Reference Guide 1998 Original PDF

    BFR96 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BFR96TS

    Abstract: No abstract text available
    Text: BFR96TS Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure


    Original
    PDF BFR96TS BFR96TS D-74025 22-Jan-01

    B 1359

    Abstract: BFR96TS
    Text: BFR96TS Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure


    Original
    PDF BFR96TS BFR96TS D-74025 22-Jan-01 B 1359

    BFR96TS

    Abstract: No abstract text available
    Text: BFR96TS Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308 1 X BFR96TS Marking: BFR96TS Plastic case TO 50


    Original
    PDF BFR96TS BFR96TS D-74025 31-Jul-96

    Untitled

    Abstract: No abstract text available
    Text: j. ts TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain - Bandwidth Product, fT = 4.5 GHz (typ) @ 1C = 50 mA •


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    PDF BFR96 10Vdc,

    BFR96T

    Abstract: B 1359 marking amplifier j02
    Text: BFR96T Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency


    Original
    PDF BFR96T BFR96T D-74025 20-Jan-99 B 1359 marking amplifier j02

    B 1359

    Abstract: BFR96TS
    Text: BFR96TS Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure


    Original
    PDF BFR96TS BFR96TS D-74025 20-Jan-99 B 1359

    Untitled

    Abstract: No abstract text available
    Text: BFR96TS Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • • High power gain Low noise figure e3 High transition frequency Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 B 1 C 3 2 E


    Original
    PDF BFR96TS 2002/95/EC 2002/96/EC BFR96TS D-74025 29-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Not for new design, this product will be obsoleted soon BFR96TS Vishay Semiconductors Silicon NPN Planar RF Transistor B 1 C 3 Features • • • • • 3 High power gain Low noise figure e3 High transition frequency Lead Pb -free component Component in accordance to RoHS 2002/95/EC


    Original
    PDF BFR96TS 2002/95/EC 2002/96/EC BFR96TS 18-Jul-08

    BFR 970

    Abstract: BFR96TS Transistor BFR 96 Bfr 910 Transistor BFR 90 application Transistor BFR 559
    Text: BFR 96 TS TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 1 BFR96TS Marking Plastic case XTO 50


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    PDF BFR96TS D-74025 BFR 970 Transistor BFR 96 Bfr 910 Transistor BFR 90 application Transistor BFR 559

    BFR96

    Abstract: BFR96T
    Text: BFR96T Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308 1 X BFR96T Marking: BFR96T Plastic case TO 50


    Original
    PDF BFR96T BFR96T D-74025 17-Apr-96 BFR96

    bfr96

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA • Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz


    Original
    PDF BFR96 bfr96

    Untitled

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS BFR96G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA


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    PDF BFR96 BFR96G

    transistor bfr96

    Abstract: BFR96 BFR964 RF NPN POWER TRANSISTOR 3 GHZ 200 watts motorola J50 datasheet for transistor bfr96 BFR96 TRANSISTOR BFR961 RF TRANSISTOR 1.5 GHZ BFR96 motorola
    Text: MOTOROLA Order this document by BFR96/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor BFR96 The BFR96 transistor uses the same state–of–the–art microwave transistor chip which features fine–line geometry, ion–implanted arsenic emitters and gold


    Original
    PDF BFR96/D BFR96 BFR96 BFR96/D* DEVICEBFR96/D transistor bfr96 BFR964 RF NPN POWER TRANSISTOR 3 GHZ 200 watts motorola J50 datasheet for transistor bfr96 BFR96 TRANSISTOR BFR961 RF TRANSISTOR 1.5 GHZ BFR96 motorola

    bfr96ts

    Abstract: No abstract text available
    Text: BFR96TS VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 3 B 1 C 3 • High power gain • Low noise figure • High transition frequency 2 E 2 Applications 1 RF amplifier up to GHz range specially for wide band antenna amplifier. 19039


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    PDF BFR96TS BFR96TS D-74025 25-Aug-04

    BFR96 philips

    Abstract: No abstract text available
    Text: ^ 5 3 ^ 3 1 Philips Semiconductors 0 0 3 1 flfl7 b fll M APX Product specification BFR96 NPN 5 GHz w ideband transistor N AflER PHILIPS/DISCRETE DESCRIPTION b^E D PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as


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    PDF BFR96 BFR96/02 ON4487) hbS3T31 BFR96 philips

    MRF966

    Abstract: MRF96 re30d
    Text: MRF961 MRF962 MRF965 See BFR96 MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line MRF966 MRFC966 N-Channel Dual-Gate G aA s Field-Effect Transistor . . . d e p le t i o n m o d e d u a l- g a t e M E S F E T d e s ig n e d f o r h ig h f r e q u e n c y a m p lif ie r


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    PDF MRF961 MRF962 MRF965 BFR96) MRF966 MRFC966 MRF966, MRFC966 MRF96 re30d

    TELEFUNKEN* U 413 B

    Abstract: MAR 641 TRANSISTOR transistor MAR 439
    Text: T emic BFR96T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications RF-araplifier up to GHz range specially for wide band an­ tenna amplifier. Features • High power gain • Low noise figure • High transition frequency BFR96T Marking: BFR96T


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    PDF BFR96T BFR96T 26-Mar-97 TELEFUNKEN* U 413 B MAR 641 TRANSISTOR transistor MAR 439

    transistor bfr96

    Abstract: SL 100 NPN Transistor BFR96 BFR96 LOW POWER TRANSISTOR transistor 936 M8B916 BFR96 pins resistance BFR96 TRANSISTOR BFQ32 a 933 transistor
    Text: Philips Sem iconductors Product specification ^ NPN 5 GHz wideband transistor PHILIPS DESCRIPTION 711DÔ2t> 0 0 4 5 7 7 b Sfc.E D INTERNATIONAL BFR96 lfl7 « P H I N PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as


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    PDF BFR96 004577b ON4487) BFQ32. BFR96/02 0D457A2 00MS763 transistor bfr96 SL 100 NPN Transistor BFR96 BFR96 LOW POWER TRANSISTOR transistor 936 M8B916 BFR96 pins resistance BFR96 TRANSISTOR BFQ32 a 933 transistor

    Untitled

    Abstract: No abstract text available
    Text: ViSH A Y ▼ BFR96TS _ Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications RF amplifier up to GHz range specially for wide band antenna amplifier.


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    PDF BFR96TS BFR96TS 20-Jan-99

    lc 945 p transistor NPN

    Abstract: BFR96S
    Text: hhS3R31 D031A15 756 H A P X Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR96S N AUER PHILIPS/DISCRETE DESCRIPTION hRE T> PINNING NPN transistor in a plastic SOT37 envelope primarily intended for MATV applications. The device


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    PDF hhS3R31 D031A15 BFR96S BFQ32S. BFR96S/02 lc 945 p transistor NPN BFR96S

    TRANSISTOR PEC 545

    Abstract: No abstract text available
    Text: BFR96T V IS HAY Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain • Low noise figure


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    PDF BFR96T BFR96T BFR96T_ 20-Jan-99 TRANSISTOR PEC 545

    BFR96

    Abstract: BFR96 TRANSISTOR transistor bfr96
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor BFR96 The BFR96 transistor uses the same state-of-the-art microwave transistor chip which features fine-line geometry, ion-implanted arsenic emitters and gold top metallization. This transistor is intended for low-to-medium power amplifiers


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    PDF BFR96 BFR96 D10b3 BFR96 TRANSISTOR transistor bfr96

    X3A-BFR96

    Abstract: transistor bfr96 BFR96S BFR96 BFQ63 crystal PHILIPS BFR106
    Text: P h ilip s S em icon du ctors T 3 l '^ o NPN 5 GHz wideband transistor crystal PHILIPS INTERNATIONAL Produ ct sp ecification SbE D • X3A-BFR96 IPHIN 711Gß2b OaMblQH 4^2 M E C H A N IC A L DATA D ESCRIPTION Crystal N PN crystal used in BFR 96S SOT37 , BFQ63 (TO-72)


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    PDF BFR96S BFQ63 BFR106 X3A-BFR96 X3A-BFR96 711Gfi2b URV-3-5-52/733 transistor bfr96 BFR96S BFR96 BFQ63 crystal PHILIPS BFR106

    lc 945 p transistor

    Abstract: lc 945 p transistor NPN lc 945 transistor BFR96S 6852 d TRANSISTOR s5D transistor SL 100 NPN Transistor transistor B 764 BFr96s philips FP 801
    Text: □□31ÖRS 7 s ö P hilips Sem ico n d u cto rs IAPX Product specification NPN 5 GHz wideband transistor BFR96S N AUER PHILIPS/DISCRETE D ESC R IP T IO N hTE T> PINNING NPN transistor in a plastic SO T37 envelope primarily intended for MATV applications. The device


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    PDF BFR96S BFQ32S. lc 945 p transistor lc 945 p transistor NPN lc 945 transistor BFR96S 6852 d TRANSISTOR s5D transistor SL 100 NPN Transistor transistor B 764 BFr96s philips FP 801