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    BFR19 Price and Stock

    Infineon Technologies AG BFR193FH6327XTSA1

    RF TRANS NPN 12V 8GHZ PG-TSFP-3
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    DigiKey BFR193FH6327XTSA1 Cut Tape 32,920 1
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    Infineon Technologies AG BFR193E6327HTSA1

    RF TRANS NPN 12V 8GHZ SOT-23
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    Infineon Technologies AG BFR193WH6327XTSA1

    RF TRANS NPN 12V 8GHZ PG-SOT-323
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    BFR193WH6327XTSA1 Cut Tape 21,649 1
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    Infineon Technologies AG BFR193L3E6327XTMA1

    RF TRANS NPN 12V 8GHZ TSLP-3-1
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    DigiKey BFR193L3E6327XTMA1 Cut Tape 9,478 1
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    BFR193L3E6327XTMA1 4,388 1
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    Rochester Electronics BFR193L3E6327XTMA1 134,900 1
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    Rochester Electronics LLC BFR193FH6327

    RF TRANS NPN 12V 8GHZ PG TSFP-3
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    DigiKey BFR193FH6327 Bulk
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    BFR19 Datasheets (51)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFR19 Micro Electronics Semiconductor Device Data Book Scan PDF
    BFR19 Micro Electronics Medium Power Amplifiers and Switches Scan PDF
    BFR19 Micro Electronics Medium Power Amplifiers and Switches Scan PDF
    BFR19 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BFR19 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BFR19 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BFR19 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BFR19 Unknown Transistor Replacements Scan PDF
    BFR19 Unknown Transistor Replacements Scan PDF
    BFR19 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BFR19 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BFR19 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFR19 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BFR19 Unknown Shortform Electronic Component Datasheets Short Form PDF
    BFR19 Semico Medium Power Transistors Scan PDF
    BFR19 SGS-Ates Shortform Data Book 1977/78 Short Form PDF
    BFR193 Infineon Technologies NPN Silicon RF Transistor Original PDF
    BFR193 Infineon Technologies NPN Silicon RF Transistor Original PDF
    BFR193 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BFR193 Siemens NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) Original PDF

    BFR19 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: BFR193T NPN Silicon RF Transistor Preliminary data 3  For low noise, high-gain amplifiers up to 2 GHz  For linear broadband amplifiers  fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		BFR193T VPS05996 PDF

    Untitled

    Abstract: No abstract text available
    Text: BFR193 Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available


    Original     		BFR193 AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: BFR193F Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 2 3 1 • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free RoHS compliant and halogen-free product • Qualification report according to AEC-Q101 available


    Original     		BFR193F AEC-Q101 PDF

    bcx40

    Abstract: No abstract text available
    Text: Medium Power Amplifiers and Switches TYPE POLA­ CASE NO. RITY BCW97 BCX25 BCX26 BCX40 BCX45 BCX46 BCX47 BCX48 BCX49 BCX50 BCX60 BCX73 BCX74 BCX75 BCX76 BFR10 BFR11 BFR18 BFR19 BFR20 BFR21 BFR22 BFR23 BFR24 BFR41 BFR77 BFR79 BFS92 BFS93 BFS94 BFS95 BFT29 BFT30


    OCR Scan     		BCW97 BCX25 BCX26 BCX40 BCX45 BCX46 BCX47 BCX48 BCX49 BCX50 PDF

    RCs INFINEON

    Abstract: No abstract text available
    Text: BFR193F NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 2 3 1 • fT = 8 GHz, F = 1 dB at 900 MHz • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description


    Original     		BFR193F RCs INFINEON PDF

    BFR193T

    Abstract: SC75 210ts VPS05996
    Text: BFR193T NPN Silicon RF Transistor Preliminary data 3  For low noise, high-gain amplifiers up to 2 GHz  For linear broadband amplifiers  fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		BFR193T VPS05996 900MHz Aug-09-2001 BFR193T SC75 210ts VPS05996 PDF

    sot23 marking zs

    Abstract: No abstract text available
    Text: BFR193T / BFR193TW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 1 • Low noise figure • High transition frequency fT = 8 GHz • Excellent large-signal behaviour 3 2 Applications 1 For low-noise, high-gain applications such as power


    Original     		BFR193T BFR193TW OT-23 BFR193TW OT-323 D-74025 24-Aug-04 sot23 marking zs PDF

    Untitled

    Abstract: No abstract text available
    Text: BFR193T / BFR193TW Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • • 1 Low noise figure High transition frequency fT = 8 GHz e3 Excellent large-signal behaviour Lead Pb -free component Component in accordance to RoHS 2002/95/EC


    Original     		BFR193T BFR193TW 2002/95/EC 2002/96/EC OT-23 BFR193TW OT-323 D-74025 28-Apr-05 PDF

    BFR193TF

    Abstract: No abstract text available
    Text: BFR193TF VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Description The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous


    Original     		BFR193TF OT490 OT490 D-74025 23-Sep-02 BFR193TF PDF

    Untitled

    Abstract: No abstract text available
    Text: BFR193 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 2 3 • fT = 8 GHz, F = 1 dB at 900 MHz 1 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		BFR193 10mponents PDF

    bfr193

    Abstract: No abstract text available
    Text: BFR193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 2 3 • fT = 8 GHz, NFmin = 1 dB at 900 MHz 1 • Pb-free RoHS compliant package ESD (Electrostatic discharge) sensitive device, observe handling precaution!


    Original     		BFR193 150components bfr193 PDF

    Untitled

    Abstract: No abstract text available
    Text: BFR193F NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 2 3 1 • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free RoHS compliant and halogen-free (WEEE compliant) product ESD (Electrostatic discharge) sensitive device, observe handling precaution!


    Original     		BFR193F 15components PDF

    Untitled

    Abstract: No abstract text available
    Text: Not for new design, this product will be obsoleted soon BFR193T / BFR193TW Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • • 1 Low noise figure High transition frequency fT = 8 GHz e3 Excellent large-signal behaviour Lead Pb -free component


    Original     		BFR193T BFR193TW 2002/95/EC 2002/96/EC OT-23 BFR193TW OT-323 18-Jul-08 PDF

    BFR193T

    Abstract: BFR193TW
    Text: BFR193T / BFR193TW Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • • 1 Low noise figure High transition frequency fT = 8 GHz e3 Excellent large-signal behaviour Lead Pb -free component Component in accordance to RoHS 2002/95/EC


    Original     		BFR193T BFR193TW 2002/95/EC 2002/96/EC BFR193T OT-23 OT-323 08-Apr-05 BFR193TW PDF

    Untitled

    Abstract: No abstract text available
    Text: BFR193L3 NPN Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 • fT = 8 GHz, NFmin = 1 dB at 900 MHz 1 2 • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available


    Original     		BFR193L3 AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: BFR193 NPN Silicon RF Transistor 3  For low noise, high-gain amplifiers up to 2 GHz  For linear broadband amplifiers  fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR193 Marking


    Original     		BFR193 VPS05161 PDF

    Untitled

    Abstract: No abstract text available
    Text: BFR193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 2 1 • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free RoHS compliant package ESD (Electrostatic discharge) sensitive device, observe handling precaution!


    Original     		BFR193W PDF

    BFR193

    Abstract: 8-72V
    Text: BFR193 NPN Silicon RF Transistor 3  For low noise, high-gain amplifiers up to 2 GHz  For linear broadband amplifiers  fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR193 Marking


    Original     		BFR193 VPS05161 Aug-09-2001 BFR193 8-72V PDF

    50w transistor

    Abstract: BFR193T BFR193TW
    Text: BFR193T/BFR193TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low–noise, high–gain applications such as power amplifiers up to 2GHz and for linear broadband amplifiers.


    Original     		BFR193T/BFR193TW BFR193T BFR193TW D-74025 14-Feb-00 50w transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: BFR193L3 NPN Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 1 • fT = 8 GHz, NFmin = 1 dB at 900 MHz 2 • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available


    Original     		BFR193L3 AEC-Q101 PDF

    BFR193TF

    Abstract: No abstract text available
    Text: BFR193TF Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous


    Original     		BFR193TF OT-490 OT-490 08-Apr-05 BFR193TF PDF

    BFR193T

    Abstract: BFR193TW ZL50
    Text: BFR193T/BFR193TW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low–noise, high–gain applications such as power amplifiers up to 2GHz and for linear broadband amplifiers.


    Original     		BFR193T/BFR193TW BFR193T BFR193TW D-74025 14-Feb-00 ZL50 PDF

    BFR106

    Abstract: BCW66 BFR194 E6327 BFR194 E6327
    Text: BFR106 NPN Silicon RF Transistor 3  For low noise, high-gain amplifiers  For linear broadband amplifiers  Special application: antenna amplifiers  Complementary type: BFR194 PNP 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		BFR106 BFR194 VPS05161 BFR106 BCW66 BFR194 E6327 BFR194 E6327 PDF

    Untitled

    Abstract: No abstract text available
    Text: BFR193T/BFR193TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low–noise, high–gain applications such as power amplifiers up to 2GHz and for linear broadband amplifiers.


    Original     		BFR193T/BFR193TW BFR193T BFR193TW D-74025 21-Sep-99 PDF