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    BFG67 Search Results

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    BFG67 Price and Stock

    NXP Semiconductors BFG67,215

    RF TRANS NPN 10V 8GHZ SOT143B
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    Newark BFG67,215 Bulk 3,000
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    NXP Semiconductors BFG67,235

    RF TRANS NPN 10V 8GHZ SOT143B
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    NXP Semiconductors BFG67/X,215

    RF TRANS NPN 10V 8GHZ SOT143B
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    EBV Elektronik BFG67/X,215 54 Weeks 3,000
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    Philips Semiconductors BFG67/X

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    Bristol Electronics BFG67/X 966
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    Quest Components BFG67/X 3,698
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    BFG67 Datasheets (40)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BFG67 NXP Semiconductors NPN 8 GHz wideband transistors Original PDF
    BFG67 Philips Semiconductors NPN 8 GHz Wideband Transistor Original PDF
    BFG67 Philips Semiconductors NPN 8 GHz Wideband Transistor Original PDF
    BFG67 Vishay Telefunken Silicon NPN Planar RF Transistor Original PDF
    BFG67 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFG67,215 NXP Semiconductors NPN 8 GHz wideband transistors - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; fT: 8 GHz; Frequency: 2.5 MHz; GUM: 17 dB; GUM @ f1: 17 dB; GUM @ f2: 10 dB; IC: 50 mA; Noise figure: 1.7@f12.5@f2 dB; Ptot: 380 mW; Polarity: NPN; Package: SOT143B (SOT4); Container: Tape reel smd Original PDF
    BFG67,235 NXP Semiconductors NPN 8 GHz wideband transistors - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; fT: 8 GHz; Frequency: 2.5 MHz; GUM: 17 dB; GUM @ f1: 17 dB; GUM @ f2: 10 dB; IC: 50 mA; Noise figure: 1.7@f12.5@f2 dB; Ptot: 380 mW; Polarity: NPN; Package: SOT143B (SOT4); Container: Tape reel smd Original PDF
    BFG67-GS08 Vishay TRANS GP BJT NPN 10V 0.05A 4 Original PDF
    BFG67R Philips Semiconductors NPN 8 GHz Wideband Transistor Original PDF
    BFG67R Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFG67T/R NXP Semiconductors TRANS GP BJT NPN 10V 0.05A 4S Original PDF
    BFG67TR Philips Semiconductors NPN 8 GHz wideband transistor Original PDF
    BFG67T/R Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BFG67W Philips Semiconductors NPN 8 GHz wideband transistor Original PDF
    BFG67W Philips Semiconductors NPN 8 GHz wideband transistor Original PDF
    BFG67W Philips Semiconductors NPN 8 GHz wideband transistor Scan PDF
    BFG67WT/R Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BFG67W/X Philips Semiconductors NPN 8 GHz wideband transistor Original PDF
    BFG67W_X Philips Semiconductors 20 V, NPN 8 GHz wideband transistor Original PDF
    BFG67W/X Philips Semiconductors NPN 8 GHz wideband transistor Scan PDF

    BFG67 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BFG67

    Abstract: No abstract text available
    Text: BFG67; BFG67/X; BFG67/XR NPN 8 GHz wideband transistors Rev. 05 — 23 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact


    Original     		PDF BFG67; BFG67/X; BFG67/XR BFG67

    BFG67

    Abstract: No abstract text available
    Text: BFG67 Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • • 2 Small feedback capacitance Low noise figure e3 High transition frequency Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 1 4


    Original     		PDF BFG67 2002/95/EC 2002/96/EC OT-143 08-Apr-05 BFG67

    marking V3

    Abstract: No abstract text available
    Text: BFG67 VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 2 1 • Small feedback capacitance • Low noise figure • High transition frequency 4 3 Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated


    Original     		PDF BFG67 OT-143 D-74025 23-Aug-04 marking V3

    marking v3

    Abstract: No abstract text available
    Text: BFG67 Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • • 2 Small feedback capacitance Low noise figure e3 High transition frequency Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 1 4


    Original     		PDF BFG67 2002/95/EC 2002/96/EC OT-143 D-74025 15-Apr-05 marking v3

    BF 212 transistor

    Abstract: BFG67W
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors September 1994 Philips Semiconductors Product specification BFG67W BFG67W/X; BFG67W/XR


    Original     		PDF BFG67W BFG67W/X; BFG67W/XR BFG67W/X SCD34 BF 212 transistor BFG67W

    BFG67

    Abstract: 2 GHz ic marking v3
    Text: BFG67 Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave


    Original     		PDF BFG67 BFG67 D-74025 11-Nov-99 2 GHz ic marking v3

    Untitled

    Abstract: No abstract text available
    Text: BFG67; BFG67/X; BFG67/XR NPN 8 GHz wideband transistors Rev. 05 — 23 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact


    Original     		PDF BFG67; BFG67/X; BFG67/XR

    Untitled

    Abstract: No abstract text available
    Text: BFG67 Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave


    Original     		PDF BFG67 BFG67 D-74025 11-Nov-99

    Untitled

    Abstract: No abstract text available
    Text: BFG67 Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave


    Original     		PDF BFG67 BFG67 D-74025 11-Nov-99

    Untitled

    Abstract: No abstract text available
    Text: BFG67 Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave


    Original     		PDF BFG67 BFG67 D-74025 11-Nov-99

    BFG67

    Abstract: feature of ic UM 66 transistor GR 338
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG67; BFG67/X; BFG67/XR NPN 8 GHz wideband transistors Product specification Supersedes data of September 1995 1998 Oct 02 Philips Semiconductors Product specification NPN 8 GHz wideband transistors FEATURES BFG67; BFG67/X; BFG67/XR


    Original     		PDF BFG67; BFG67/X; BFG67/XR BFG67 BFG67/X SCA60 BFG67 feature of ic UM 66 transistor GR 338

    STR M 6559

    Abstract: 9632 transistor str 6559 4609 IC equivalent BFG67W STR 5564
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors August 1995 Philips Semiconductors Product specification BFG67W BFG67W/X; BFG67W/XR


    Original     		PDF BFG67W BFG67W/X; BFG67W/XR BFG67W/X SCD34 STR M 6559 9632 transistor str 6559 4609 IC equivalent BFG67W STR 5564

    Untitled

    Abstract: No abstract text available
    Text: Not for new design, this product will be obsoleted soon BFG67 Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • • 2 Small feedback capacitance Low noise figure e3 High transition frequency Lead Pb -free component Component in accordance to RoHS 2002/95/EC


    Original     		PDF BFG67 2002/95/EC 2002/96/EC OT-143 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: BFG67/XR Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)20 I(C) Max. (A)50m Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)5


    Original     		PDF BFG67/XR

    9632 transistor

    Abstract: high gain low capacitance NPN transistor transistor 9632 BFG67W transistor marking CODE S4b transistor equivalent 1047
    Text: Product specification Philips Semiconductors B F G 67W B FG 67W /X ; B F G 67W /X R N PN 8 G H z w id eb an d tra n s isto r M ARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG67W V2 • Gold metallization ensures excellent reliability.


    OCR Scan     		PDF BFG67W BFG67W/X; BFG67W/XR OT343 OT343R BFG67W/X BFG67W/XR BFG67W BFG67W/X 9632 transistor high gain low capacitance NPN transistor transistor 9632 transistor marking CODE S4b transistor equivalent 1047

    BFG67R

    Abstract: "Transistor 1 GHz" BFG67 MBB307 sot143r transistor
    Text: Philips Semiconductors Product specification BFG67; BFG67/X; BFG67R; BFG67/XR NPN 8 GHz wideband transistor PINNING FEATURES • High power gain PIN DESCRIPTION • Low noise figure BFG67 Fig.1 Code: V3. • High transition frequency 1 collector • Gold metallization ensures


    OCR Scan     		PDF BFG67; BFG67/X; BFG67R; BFG67/XR BFG67 OT143 BFG67) BFG67/X) BFG67R BFG67/XR) "Transistor 1 GHz" MBB307 sot143r transistor

    Untitled

    Abstract: No abstract text available
    Text: bb53T31 GD3220b TAM Philips Semiconductors • AP y Product specification NPN 8 GHz wideband transistor crystal ^ N X3A-BFQ65 AMER PHILIPS/DISCRETE DESCRIPTION b=1E D MECHANICAL DATA NPN crystal used in BFQ65 SOT37 , BFG67 (SOT143) and BFQ67 (SOT23). Crystals are supplied as whole


    OCR Scan     		PDF bb53T31 GD3220b X3A-BFQ65 BFQ65 BFG67 OT143) BFQ67

    bfg67

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BFG67; BFG67/X; BFG67/XR NPN 8 GHz wideband transistors Product specification Supersedes data of September 1995 Philips Sem iconductors 1998 Oct 02 PHILIPS Philips Semiconductors Product specification NPN 8 GHz wideband transistors


    OCR Scan     		PDF BFG67; BFG67/X; BFG67/XR BFG67/XR BFG67 BFG67/X SCA60 bfg67

    so 54 t

    Abstract: BF547B BF751 T143R BFG65
    Text: 54 RF/Microwave Devices RF W ideband Transistors Ratings V ic * Type No. BF547 B F547W BF689K BF747 BF747W BF748 BF751 BF763 B F G 16 A B F G 17 A B FG 25 A /X BFG31 BFG 32 B FG 33 BFG33/X BFG33/XR B FG 34 BFG35 BFG 55 B FG 65 B FG 67 B FG67/X BFG67/XR BFG90A


    OCR Scan     		PDF BF547 F547W BF689K BF747 BF747W BF748 BF751 BF763 BFG31 BFG33/X so 54 t BF547B T143R BFG65

    BFQ65

    Abstract: BFQ67 X3A-BFQ65 BFG67
    Text: P h ilip s Sem icon d u ctors Produ ct specification -T=3i-so NPN 8 GHz wideband transistor crystal PHILIPS INTERNATIONAL SbE D X3A-BFQ65 • 71106Sfc. QOHbCHb S'lb « P H I N M E C H A N IC A L DATA DESCRIPTION NPN crystal used in BFQ 65 SOT37 , BFG67 (SOT143)


    OCR Scan     		PDF X3A-BFQ65 71106Sb BFQ65 BFG67 OT143) BFQ67 X3A-BFQ65 URV-3-5-52/733 BFQ65 BFQ67 BFG67

    BT 1840 PA

    Abstract: No abstract text available
    Text: • Philips Semiconductors ^ ■ APX bb53T31 0024641 350 ■ N AUER PHI LIP S/DISCRETE NPN 8 GHz wideband transistor FEATURES Product specification b7E — BFG67; BFG67/X; BFG67R; BFG67/XR ■ PINNING 4 PIN 3 DESCRIPTION • High power gain • Low noise figure


    OCR Scan     		PDF bb53T31 BFG67; BFG67/X; BFG67R; BFG67/XR BFG67 BFG67/X BFG67 OT143 BFG67) BT 1840 PA

    TAG 9109

    Abstract: tag 8538 tag 8904 BT 1840 PA Q 371 Transistor TE 555-1 bt 1490 transistor FC54M Transistor MJE 5331 TAG 9031 mje 5331
    Text: • Philips Semiconductors bbS3T31 □ □ 2 I4Ö41 N AUER PHILIPS/DISCRETE NPN 8 GHz wideband transistor FEATURES ■ APX 350 Product specification b7E — : BFG67; BFG67/X; S ; BFG67R; BFG67/XR PINNING PIN DESCRIPTION • High power gain • Low noise figure


    OCR Scan     		PDF bb53T31 BFG67 OT143 BFG67) BFG67/X) BFG67R BFG67/XR) BFG67 Co600 TAG 9109 tag 8538 tag 8904 BT 1840 PA Q 371 Transistor TE 555-1 bt 1490 transistor FC54M Transistor MJE 5331 TAG 9031 mje 5331

    BFG67

    Abstract: Y parameters of transistors transistor marking v12 ghz db 97-0310
    Text: Philips Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR PINNING FEATURES • High power gain DESCRIPTION PIN • Low noise figure BFG67 • High transition frequency • Gold metallization ensures excellent reliability.


    OCR Scan     		PDF BFG67; BFG67/X; BFG67/XR OT143B BFG67) BFG67/X) BFG67/XR) BFG67 BFG67/X BFG67 Y parameters of transistors transistor marking v12 ghz db 97-0310

    BFQ65

    Abstract: BFG67 BFQ67 X3A-BFQ65 to4 TRANSISTOR
    Text: ^ □53^31 0G32S0b TÔ4 Philips Semiconductors • APY Product specification NPN 8 GHz wideband transistor crystal ^ N X3A-BFQ65 AMER PHILIPS/DISCRETE DESCRIPTION b^E D MECHANICAL DATA NPN crystal used in BFQ65 (SOT37 , BFG67 (SOT143) and BFQ67 (SOT23). Crystals are supplied as whole


    OCR Scan     		PDF 0G32S0b X3A-BFQ65 BFQ65 BFG67 OT143) BFQ67 X3A-BFQ65 URV-3-5-52/733 BFQ65 BFG67 BFQ67 to4 TRANSISTOR