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    BF996S Search Results

    BF996S Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BF 996 S Infineon Technologies TRANS MOSFET N-CH 20V 0.03A 4SOT-143 Original PDF
    BF996S NXP Semiconductors BF996S - N-channel dual-gate MOS-FET - CIS TYP: 2.3 pF; COS: 0.8 pF; ID: 30 mA; IDSS: 4 to 20 mA; IDSS min.: 0.8 mA; Noise figure: 1.8@800MHz dB; Note: With external bias ; Remarks: UHF ; -V(P)GS MAX: 2.5 V; VDSmax: 20 V; YFS min.: 15 mS Original PDF
    BF996S Philips Semiconductors N-channel dual-gate MOS-FET Original PDF
    BF996S Philips Semiconductors Silicon N-Channel Dual Gate MOS FET Original PDF
    BF996S Siemens Cross Reference Guide 1998 Original PDF
    BF996S Siemens Silicon N Channel MOSFET Tetrode (For input stages in UHF TV tuners High transconductance Low noise figure) Original PDF
    BF996S Vishay Telefunken TRANS MOSFET N-CH 20V 0.03A 4SOT-143 Original PDF
    BF996S Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Original PDF
    BF996S Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BF996S Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BF996S Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BF996S Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BF996S Philips Semiconductors SILICON N-CHANNEL DUAL GATE MOS-FET Scan PDF
    BF996S Philips Semiconductors Silicon N-Channel Dual Gate MOS FET Scan PDF
    BF996S,215 NXP Semiconductors BF996 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MICRO MINIATURE, PLASTIC, SMD, 4 PIN, FET RF Small Signal Original PDF
    BF996S,215 NXP Semiconductors N-channel dual-gate MOS-FET - CIS TYP: 2.3 pF; COS: 0.8 pF; ID: 30 mA; IDSS: 4 to 20 mA; IDSS min.: 0.8 mA; Noise figure: 1.8@800MHz dB; Note: With external bias ; Remarks: UHF ; -V(P)GS MAX: 2.5 V; VDSmax: 20 V; YFS min.: 15 mS; Package: SOT143B (SOT4); Container: Tape reel smd Original PDF
    BF996SA Vishay Telefunken N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Original PDF
    BF996SB Vishay Telefunken N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Original PDF
    BF996S-GS08 Vishay Telefunken TRANS MOSFET N-CH 20V 0.03A 4SOT-143 Original PDF
    BF996ST/R NXP Semiconductors N-channel dual-gate MOS-FET - CIS TYP: 2.3 pF; COS: 0.8 pF; ID: 30 mA; IDSS: 4 to 20 mA; IDSS min.: 0.8 mA; Noise figure: 1.8@800MHz dB; Note: With external bias ; Remarks: UHF ; -V(P)GS MAX: 2.5 V; VDSmax: 20 V; YFS min.: 15 mS Original PDF

    BF996S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BF996S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages in UHF tuners. Features D Integrated gate protection diodes D Low noise figure


    Original     		PDF BF996S BF996S D-74025 20-Jan-99

    Untitled

    Abstract: No abstract text available
    Text: BF996S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • Integrated gate protection diodes Low noise figure e3 Low feedback capacitance High cross modulation performance Low input capacitance


    Original     		PDF BF996S 2002/95/EC 2002/96/EC OT-143 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: BF996SR Transistors N-Channel; Dual-Gate Tetrode MOSFET V BR DSS (V)20 V(BR)GSS (V)17 I(D) Max. (A)30m I(DM) Max. (A) Pulsed I(D) @Temp (øC) Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Amb.


    Original     		PDF BF996SR

    BF996S

    Abstract: GPS25 829 Tetrode
    Text: BF996S N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuner. Features D High cross modulation performance D Low input capacitance D High AGC-range


    Original     		PDF BF996S BF996S 30the D-74025 17-Apr-96 GPS25 829 Tetrode

    Untitled

    Abstract: No abstract text available
    Text: BF996S VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance Low input capacitance


    Original     		PDF BF996S OT-143 D-74025 20-Aug-04

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BF996S N-channel dual-gate MOS-FET Product specification April 1991 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF996S FEATURES DESCRIPTION • Protected against excessive input voltage surges by integrated back-to-back diodes between gates


    Original     		PDF BF996S OT143 R77/02/pp8

    BF996S

    Abstract: No abstract text available
    Text: BF996S VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance Low input capacitance


    Original     		PDF BF996S OT-143 D-74025 30-Aug-04 BF996S

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF996S N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF996S FEATURES DESCRIPTION • Protected against excessive input voltage surges by


    Original     		PDF BF996S OT143

    marking code cig

    Abstract: fet dual gate sot143 Dual-Gate Mosfet BF996S dual-gate p 1S marking SOT143
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF996S N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF996S FEATURES DESCRIPTION • Protected against excessive input voltage surges by


    Original     		PDF BF996S OT143 marking code cig fet dual gate sot143 Dual-Gate Mosfet BF996S dual-gate p 1S marking SOT143

    Untitled

    Abstract: No abstract text available
    Text: BF996S Transistors N-Channel; Dual-Gate Tetrode MOSFET V BR DSS (V)20 V(BR)GSS (V)20 I(D) Max. (A)30m I(DM) Max. (A) Pulsed I(D) @Temp (øC) Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Amb.480


    Original     		PDF BF996S

    BF996S

    Abstract: marking code cig dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF996S N-channel dual-gate MOS-FET Product specification April 1991 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF996S FEATURES DESCRIPTION • Protected against excessive input voltage surges by


    Original     		PDF BF996S OT143 R77/02/pp8 BF996S marking code cig dual-gate

    BF996S

    Abstract: No abstract text available
    Text: BF996S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • Integrated gate protection diodes Low noise figure e3 Low feedback capacitance High cross modulation performance Low input capacitance


    Original     		PDF BF996S 2002/95/EC 2002/96/EC OT-143 08-Apr-05 BF996S

    BF996S

    Abstract: BF996SA BF996SB
    Text: BF996S Vishay Semiconductors N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages in UHF tuners. Features D Integrated gate protection diodes D Low noise figure


    Original     		PDF BF996S BF996S D-74025 20-Jan-99 BF996SA BF996SB

    BF996S

    Abstract: BF996SA BF996SB
    Text: BF996S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages in UHF tuners. Features D Integrated gate protection diodes D Low noise figure


    Original     		PDF BF996S BF996S D-74025 20-Jan-99 BF996SA BF996SB

    Untitled

    Abstract: No abstract text available
    Text: BF996S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • Integrated gate protection diodes Low noise figure e3 Low feedback capacitance High cross modulation performance Low input capacitance


    Original     		PDF BF996S 2002/95/EC 2002/96/EC OT-143 D-74025 15-Apr-05

    S852T

    Abstract: BF579 T0-50 BF964S BF96 BFP183T
    Text: Tem ic Semiconduct ors Selector Guide Dual-Gate Si-MOSFETs N-Channel Depletion Mode Number BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T VD5 V 20 20 20 12 20 20 20 12 20 10 lümax mA 30 30 30 30 30 30 30 30 30 20 Iy2isl at Ids mA mS 15


    OCR Scan     		PDF BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T S852T BF579 T0-50 BF96 BFP183T

    fet MARKING MHp

    Abstract: sot143 code marking MS FET marking code marking ANs marking L1 fet BF996S
    Text: BF996S PHILIPS INTERNATIONAL 5 bE D 711002b D 0 3 l+D7û ÖTß • PHIN F O R D E T A IL E D IN F O R M A T IO N SEE T H E L A T E S T ISSUE OF H A N D B O O K SC07 O R D A T A S H E E T T - 35-27 SILICON N-CHANNEL DUAL GATE MOS-FET D e pletion ty p e fie ld -e ffe c t tra n sisto r in a plastic SO T143 m icro m in ia tu re envelope w ith source and


    OCR Scan     		PDF BF996S OT143 OT143. fet MARKING MHp sot143 code marking MS FET marking code marking ANs marking L1 fet BF996S

    Q03407

    Abstract: No abstract text available
    Text: BF996S PHILIPS INTERNATIONAL SbE D 711002b Q03407Ö • PHIN F O R D E T A I L E D IN F O R M A T IO N S E E T H E L A T E S T IS S U E O F H A N D B O O K S C 0 7 O R D A T A S H E E T T - 3 5 -2 7 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic S O T 1 4 3 microminiature envelope with source and


    OCR Scan     		PDF BF996S 711002b Q03407Ö Q03407

    BF996

    Abstract: BF 996 S BF996S
    Text: Tem ic BF996S Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode £ Applications Electrostatic sensitive device. Observe precautions for handling. *' Input and mixer stages in UHF tuner. Features • Integrated gate protection diodes


    OCR Scan     		PDF BF996S BF996S 03-Mar-97 BF996 BF 996 S

    marking code 11G1

    Abstract: No abstract text available
    Text: b b S B ' m 0DE4750 462 « A P X N AMER PHILIPS/DISCRETE BF996S b7E » y v . SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended for UHF applications in television tuners.


    OCR Scan     		PDF 0DE4750 BF996S OT143 marking code 11G1

    BF996S

    Abstract: marking ANs
    Text: VllDÖSt. □□L.&Tlb EflQ IPHIN BF996S SILICON N-CHANNEL DUAL GATE MOS-FET D epletion ty p e fie ld -e ffe c t tran sisto r in a plastic SO T143 m icro m in ia tu re envelope w ith source and substrate interconnected and intended fo r U H F applications in television tuners.


    OCR Scan     		PDF 7110fl2ti BF996S OT143 BF996S marking ANs

    Untitled

    Abstract: No abstract text available
    Text: 7 UDÖEL. QDt.a?lb EflO HIPHIN BF996S SILICON N-CHANNEL DUAL GATE MOS-FET D ep letio n ty p e fie ld -e ffe c t transistor in a plastic S O T 1 4 3 m icro m in ia tu re envelope w ith source and substrate interconnected and intended fo r U H F applications in television tuners.


    OCR Scan     		PDF BF996S

    Untitled

    Abstract: No abstract text available
    Text: BF996S _ J SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended for UHF applications in television tuners. The device is also suitable for use in professional communication equipment.


    OCR Scan     		PDF BF996S OT143

    Untitled

    Abstract: No abstract text available
    Text: BF996S v m rn r ▼ Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode E lectrostatic sensitive device. O bserve precautions fo r handling. A Applications Input- and m ixer stages in UHF tuners. Features • Integrated gate protection diodes


    OCR Scan     		PDF BF996S BF996S D-74025 20-Jan-99