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    BF556B-T Search Results

    BF556B-T Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BF556BT/R NXP Semiconductors N-channel silicon junction field-effect transistors - CRS: 0.8 pF; IDSS: 6 to 13 mA; IG: 10 mA; Kind: DC, LF and HF amplifiers ; -V(P)GS: 0.5 to 7.5 V; VDSmax: 30 V; YFS: 4.5 ms Original PDF
    BF556B T/R Philips Semiconductors FET Transistor, N Channel, ID 0.013A, Tape and Reel Original PDF
    BF556BTR Philips Semiconductors N-channel silicon junction field-effect transistor Original PDF