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    BC636 Price and Stock

    Rochester Electronics LLC BC636ZL1

    SMALL SIGNAL BIPOLAR TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BC636ZL1 Bulk 40,000 11,539
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    Rochester Electronics LLC BC636-16ZL1

    SMALL SIGNAL BIPOLAR TRANSISTOR
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    DigiKey BC636-16ZL1 Bulk 24,000 6,662
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    onsemi BC636TA

    TRANS PNP 45V 1A TO92-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BC636TA Cut Tape 5,423 1
    • 1 $0.23
    • 10 $0.159
    • 100 $0.23
    • 1000 $0.07336
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    BC636TA Ammo Pack 2,000 2,000
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    Rochester Electronics BC636TA 123,976 1
    • 1 $0.0502
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    • 100 $0.0472
    • 1000 $0.0427
    • 10000 $0.0427
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    Rochester Electronics LLC BC636

    TRANS PNP 45V 1A TO92-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BC636 Bulk 5,000 3,806
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    • 10000 $0.08
    		Buy Now

    onsemi BC636

    TRANS PNP 45V 1A TO92-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BC636 Bulk
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    Newark BC636 Bulk 6,000
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    Rochester Electronics BC636 5,000 1
    • 1 $0.0796
    • 10 $0.0796
    • 100 $0.0748
    • 1000 $0.0677
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    Find more BC636 price and stock on Findchips.com

    BC636 Datasheets (87)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BC636 Fairchild Semiconductor PNP EPITAXIAL SILICON TRANSISTOR Original PDF
    BC636 Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
    BC636 Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
    BC636 Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
    BC636 Infineon Technologies TRANS GP BJT PNP 45V 1A 3TO-92 Original PDF
    BC636 Motorola High Current Transistors Original PDF
    BC636 Philips Semiconductors PNP GENERAL PURPOSE MEDIUM-POWER TRANSISTORS Original PDF
    BC636 Philips Semiconductors PNP medium power transistors Original PDF
    BC636 Siemens Transistor / Diode Selection Guide Original PDF
    BC636 Siemens Cross Reference Guide 1998 Original PDF
    BC636 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BC636 Siemens NPN Silicon AF Transistor Original PDF
    BC636 STMicroelectronics SMALL SIGNAL PNP TRANSISTOR Original PDF
    BC636 Bharat Electronics Shortform Transistor Data Short Form PDF
    BC636 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    BC636 Crimson Semiconductor Transistor Selection Guide Scan PDF
    BC636 Micro Electronics Silicon Transistors Scan PDF
    BC636 Micro Electronics Medium Power Amplifiers and Switches Scan PDF
    BC636 Micro Electronics Semiconductor Device Data Book Scan PDF
    BC636 Motorola European Master Selection Guide 1986 Scan PDF

    BC636 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC635

    Abstract: BC636 BC636-AP
    Text: BC636 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment BC636 BC636 TO-92 / Bulk BC636-AP BC636 TO-92 • ■ ■ / Ammopack SILICON EPITAXIAL PLANAR PNP TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY


    Original     		PDF BC636 BC636-AP BC635 BC635 BC636 BC636-AP

    bc736

    Abstract: BC635 BC637 BC639
    Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter


    Original     		PDF BC635/637/639 BC636/638/640 BC635 BC637 BC639 bc736 BC635 BC637 BC639

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components BC636-10 BC636-16 BC638 BC640   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • Through Hole Package Capable of 830mWatts of Power Dissipation


    Original     		PDF BC636-10 BC636-16 BC638 BC640 830mWatts BC636 BC640

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC636,BC638,BC640 TRANSISTOR PNP TO-92 FEATURES High current transistors 1. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 2. COLLECTOR Symbol VCBO VCEO Parameter


    Original     		PDF BC636 BC638 BC640 BC636 BC638 150mA

    BC636

    Abstract: BC638 BC640
    Text: BC636/638/640 BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter


    Original     		PDF BC636/638/640 BC635/637/639 BC636 BC638 BC640 BC636 BC638 BC640

    24825

    Abstract: BC639 BC635 BC636 BC636-10 BC636-16 BC637 BC638 BC638-16 BC640
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638; BC640 PNP medium power transistors Product specification Supersedes data of 1999 Apr 23 2001 Oct 10 Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640


    Original     		PDF M3D186 BC636; BC638; BC640 BC635, BC637 BC639. 24825 BC639 BC635 BC636 BC636-10 BC636-16 BC638 BC638-16 BC640

    transistor BC636

    Abstract: BC635 BC636 BC636BU BC636TA BC636TAR BC636TF BC636TFR
    Text: BC636 PNP Epitaxial Silicon Transistor BC636 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications • Complement to BC635 TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings T a Symbol = 25°C unless otherwise noted Parameter


    Original     		PDF BC636 BC636 BC635 transistor BC636 BC635 BC636BU BC636TA BC636TAR BC636TF BC636TFR

    c63610

    Abstract: transistor C636 BC635 BC636 BC636-10 BCP51 BCP54 BCX51 BCX54 SC-43A
    Text: BC636; BCP51; BCX51 45 V, 1 A PNP medium power transistors Rev. 08 — 22 February 2008 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1. Product overview Type number[1] Package NPN complement NXP JEITA


    Original     		PDF BC636; BCP51; BCX51 BC636 SC-43A BC635 BCP51 OT223 SC-73 BCP54 c63610 transistor C636 BC635 BC636-10 BCP51 BCP54 BCX51 BCX54 SC-43A

    bc640

    Abstract: bc636 bc638
    Text: BC636, BC636-16, BC638, BC640, BC640-16 High Current Transistors PNP Silicon http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value VCEO BC636 BC638 BC640 Collector-Base Voltage BC636 BC638 BC640 1 EMITTER Vdc –45 –60


    Original     		PDF BC636, BC636-16, BC638, BC640, BC640-16 BC636 BC638 BC640

    BC640

    Abstract: bc636 Diode bc640 BC636-16 BC636ZL1 BC638 BC638ZL1 BC640-16 BC640ZL1
    Text: BC636, BC636-16, BC638, BC640, BC640-16 High Current Transistors PNP Silicon http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value Unit VCEO BC636 BC638 BC640 Collector-Base Voltage VCBO BC636 BC638 BC640 Emitter-Base Voltage


    Original     		PDF BC636, BC636-16, BC638, BC640, BC640-16 BC636 BC638 BC640 BC640 bc636 Diode bc640 BC636-16 BC636ZL1 BC638 BC638ZL1 BC640-16 BC640ZL1

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components BC636-10 BC636-16 BC638 BC640   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • Through Hole Package Capable of 830mWatts of Power Dissipation


    Original     		PDF BC636-10 BC636-16 BC638 BC640 830mWatts BC636 BC640

    BC640

    Abstract: bc636 bc638 bc636 transistor bc640 pnp bc640 transistor Bc638 transistor PNP
    Text: BC636/BC638/BC640 Transistor PNP TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features — High current transistors MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO Parameter Collector-Base Voltage Collector-Emitter Voltage Value Units -45 BC636


    Original     		PDF BC636/BC638/BC640 BC636 BC638 BC640 bc636 transistor bc640 pnp bc640 transistor Bc638 transistor PNP

    BC635 ECB

    Abstract: BC638
    Text: BC636/638/640 BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter


    Original     		PDF BC636/638/640 BC635/637/639 BC636 BC638 BC640 BC635 ECB BC638

    Untitled

    Abstract: No abstract text available
    Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter


    Original     		PDF BC635/637/639 BC636/638/640 BC635 BC637 BC639

    BC838

    Abstract: BC640 bc636 npn transistor BC63 transistor BC639 BC635 BC636 BC637 BC638 BC639
    Text: B C 6 3 5 THRU’ B C 6 4 0 ÏA COMPLEMENTARY SILICON TRANSISTORS BC635, BC637, BC639 NPN and BC636, BC638, BC640 (PNP) are complementary silicon epitaxial planar transistors ‘ TO-92 for AF driver stages and amplifier applications up to 1A. ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF BC635, BC637, BC639 BC636, BC638, BC640 BC635 T0-92 BC838 BC640 bc636 npn transistor BC63 transistor BC639 BC636 BC637 BC638 BC639

    Bc636

    Abstract: BC640 639 TRANSISTOR PNP BC635 BC638
    Text: PNP EPITAXIAL SILICON TRANSISTOR BC636/638/640 SWITCHING AND AMPLIFIER APPLICATIONS • C om plem ent to BC 635/637/639 T O -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollecto r E m itter Voltage at R b e = 1 Kohm C ollecto r E m itter Voltage


    OCR Scan     		PDF BC636/638/640 BC635/637/639 BC636 BC638 BC640 BC640 639 TRANSISTOR PNP BC635 BC638

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR BC636/638/640 SWITCHING AND AMPLIFIER APPLICATIONS • C om plem ent to BC 635/637/639 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollecto r E m itter Voltage atR eE=1Kohm C ollecto r E m itter Voltage C ollecto r E m itter Voltage


    OCR Scan     		PDF BC636/638/640 BC636 BC638 BC640

    c640 pnp

    Abstract: c 64016 C 63816 c638 Philips 64016
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Mar 07 Philips Sem iconductors 1999 Apr 23 PHILIPS Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640 FEATURES PINNING • High current max. 1 A


    OCR Scan     		PDF BC636; BC638; BC640 BC639. BC636 115002/00/03/pp8 c640 pnp c 64016 C 63816 c638 Philips 64016

    bc638

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 base 2 collector 3 emitter • Audio and video amplifiers.


    OCR Scan     		PDF BC636; BC638; BC640 BC635, BC637 BC639. BC636 BC638 BC640

    bc 148 npn transistor

    Abstract: NPN transistor bc 148 bc639 BC 148 transistor BC637
    Text: BC635; BC637; BC639 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a plastic TO-92 package. PNP com plem ents are BC636, BC638 and BC640. QUICK REFERENCE D A T A BC635 BC637 BC639 100 Collector-base voltage open em itter v CBO max. 45 60 Collector-emitter voltage (open base)


    OCR Scan     		PDF BC635; BC637; BC639 BC636, BC638 BC640. BC635 BC637 BC639 bc 148 npn transistor NPN transistor bc 148 BC 148 transistor

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR BC636/638/640 SWITCHING AND AMPLIFIER APPLICATIONS • C om plem ent to BC635/637/639 TO -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollector Em itter Voltage at R be =1 Kohm C ollector Em itter Voltage C ollector Em itter Voltage


    OCR Scan     		PDF BC636/638/640 BC635/637/639 BC636 BC638 BC640

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE b^E ]> • £,^53^31 □D27SC3D T7T ■ APX BC635; BC637; BC639 A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a plastic TO-92 envelope, primarily intended for use in driver stages of audio amplifiers. P-N-P complements are BC636, BC638 and BC640.


    OCR Scan     		PDF D27SC BC635; BC637; BC639 BC636, BC638 BC640. BC635 BC637

    7Z104

    Abstract: BC635 BC636 BC636-10 BC637 BC638 BC638-10 BC639 BC640 BC640-10
    Text: BC636; BC638; BC640 PHILIPS INTERNA T IO NA L SbE » 711D Ö2L 0042QSÖ 013 BI P H I N SILICON PLANAR EPITAXIAL TRANSISTORS T - 2 ^ - 2 P'N P transistors in a plastic TO-92 envelope, prim arily intended fo r use in driver stages of audio amplifiers. N-P-N complements are BC635, BC637 and BC639.


    OCR Scan     		PDF BC635, BC637 BC639. BC636 BC638 BC640 7Z104 BC635 BC636-10 BC638-10 BC639 BC640 BC640-10

    BC636

    Abstract: Usha
    Text: Transistors BC636 USHA INDIA LTD SWITCHING AND AMPLIFIER APPLICATIONS ABSOLUTE MAXIMUM RATINGS (Ta= 250C) C haracteristic Sym bol Rating Unit V cE R -4 5 V Collector Emitter Voltage VcES -4 5 V Collector Emitter Voltage VcEO -4 5 V V ebo -5 -1 V A A mA W


    OCR Scan     		PDF BC636 BC636 Usha