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    AM2864B Price and Stock

    AMD AM2864B-35/BXA

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    Bristol Electronics AM2864B-35/BXA 89
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    AMD AM2864B-25DC

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    Bristol Electronics AM2864B-25DC 5
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    Component Electronics, Inc AM2864B-25DC 6
    • 1 $15.38
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    AMD AM2864BE-25/BUA

    2864BE-25/BUA
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    Quest Components AM2864BE-25/BUA 358
    • 1 $81.1724
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    AM2864BE-25/BUA 15
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    AMD AM2864BDC

    EEPROM, 8K x 8, 28 Pin, Ceramic, DIP
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    Quest Components AM2864BDC 172
    • 1 $20
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    AM2864BDC 65
    • 1 $22.5
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    AM2864B Datasheets (104)

    Part ECAD Model Manufacturer Description Curated Type PDF
    AM2864B Advanced Micro Devices 8K x 8 nMOS EEPROM Memory Scan PDF
    AM2864B-2 Advanced Micro Devices 8K x 8 nMOS EEPROM Memory Scan PDF
    AM2864B-20 Advanced Micro Devices 8K x 8 nMOS EEPROM Memory Scan PDF
    AM2864B-25 Advanced Micro Devices 8K x 8 nMOS EEPROM Memory Scan PDF
    AM2864B-3 Advanced Micro Devices 8K x 8 nMOS EEPROM Memory Scan PDF
    AM2864B-30 Advanced Micro Devices 8K x 8 nMOS EEPROM Memory Scan PDF
    AM2864B-35 Advanced Micro Devices 8K x 8 nMOS EEPROM Memory Scan PDF
    AM2864BE-200DC Advanced Micro Devices 8192 x 8-Bit Electrically Erasable PROM Scan PDF
    AM2864BE-200DCB Advanced Micro Devices 8192 x 8-Bit Electrically Erasable PROM Scan PDF
    AM2864BE-200DE Advanced Micro Devices 8192 x 8-Bit Electrically Erasable PROM Scan PDF
    AM2864BE-200DEB Advanced Micro Devices 8192 x 8-Bit Electrically Erasable PROM Scan PDF
    AM2864BE-200DI Advanced Micro Devices 8192 x 8-Bit Electrically Erasable PROM Scan PDF
    AM2864BE-200DIB Advanced Micro Devices 8192 x 8-Bit Electrically Erasable PROM Scan PDF
    AM2864BE-200LC Advanced Micro Devices 8192 x 8-Bit Electrically Erasable PROM Scan PDF
    AM2864BE-200LCB Advanced Micro Devices 8192 x 8-Bit Electrically Erasable PROM Scan PDF
    AM2864BE-200LE Advanced Micro Devices 8192 x 8-Bit Electrically Erasable PROM Scan PDF
    AM2864BE-200LEB Advanced Micro Devices 8192 x 8-Bit Electrically Erasable PROM Scan PDF
    AM2864BE-200LI Advanced Micro Devices 8192 x 8-Bit Electrically Erasable PROM Scan PDF
    AM2864BE-200LIB Advanced Micro Devices 8192 x 8-Bit Electrically Erasable PROM Scan PDF
    AM2864BE-205DC Advanced Micro Devices 8192 x 8-Bit Electrically Erasable PROM Scan PDF

    AM2864B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TMS27256

    Abstract: M27512FI TC571000D-15 et2732 TC571001D-15 4827128 27c1001a Toshiba TC571000D-20 28C256 27c32
    Text: Device List by Manufacturer . 2716 2716BDC 2732 2732A 2764 Am27C64 Am2864AE Am2864BE 27128 Am27C128 27256 Am27C256 Am27H256 Am27C512 Am27C512L Am27C010 Am27H010 Am27LV010 Am27LV010B Am27C020 Am27LV020 Am27LV020B Am27C040 Am27C080 AT28C04 AT28C16 AT28C17 AT28HC16 AT28HC16L AT27HC64


    Original     		PDF 2716BDC Am27C64 Am2864AE Am2864BE Am27C128 Am27C256 Am27H256 Am27C512 Am27C512L Am27C010 TMS27256 M27512FI TC571000D-15 et2732 TC571001D-15 4827128 27c1001a Toshiba TC571000D-20 28C256 27c32

    Device-List

    Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
    Text: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which


    Original     		PDF ALL-11 Z86E73 Z86E83 Z89371 ADP-Z89371/-PL Z8E000 ADP-Z8E001 Z8E001 Device-List cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2

    HD637B01VOP

    Abstract: HD63701VOP HD63705VOP hd63701xop HD637A01VOP HD64F3048F16 MB8516 HD637B01YOP HD63701YOP lh57257
    Text: ＡＦ−９７００ ＳＥＲＩＥＳ ＤＥＶＩＣＥ ＬＩＳＴ ＡＦ−９７０４ ＥＰＲＯＭ ＡＦ−９７０５ ＭＯＳ ＡＦ−９７０６ ＥＰＲＯＭ ＡＦ−９７０７ ＰＣ ＡＦ−９７２１ ＧＡＮＧ ＰＲＯＧＲＡＭＭＥＲ


    Original     		PDF AF-9700 24DIP 28DIP HD637B01VOP HD63701VOP HD63705VOP hd63701xop HD637A01VOP HD64F3048F16 MB8516 HD637B01YOP HD63701YOP lh57257

    ae29F2008

    Abstract: ATMEL eeprom 2816A rom AE29f2008 HN462732G D27C64 AT27C64 ASD AE29F2008 d27C128 Toshiba tmm24128 HN2764
    Text: SALES/INFORMATION HOTLINE: +44 0 1226 767404 GLV32 DEVICE SUPPORT LIST ICE Technology Ltd August 30 2001 DIP devices of 32 pins or less are supported without the need of ANY adapter. Adapter number (see adapter list). Required for PLCC, SOIC or greater than 48 pins.


    Original     		PDF GLV32 Am27C010 Am27C020 Am27C128 Am27C512 Am27C64 Am27H256 Am27LV010 Am27LV010B Am27LV020 ae29F2008 ATMEL eeprom 2816A rom AE29f2008 HN462732G D27C64 AT27C64 ASD AE29F2008 d27C128 Toshiba tmm24128 HN2764

    Device-List

    Abstract: CF775 MICROCHIP 24LC211 ae29F2008 im4a3-32 CNV-PLCC-MPU51 ep320ipc cf745 04 p ALL-11P3 29lv640
    Text: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which


    Original     		PDF ALL-11 Z8E000 ADP-Z8E001 Z8E001 Z90231 ADP-Z90259-SD Z90241 ADP-Z90241-SD Device-List CF775 MICROCHIP 24LC211 ae29F2008 im4a3-32 CNV-PLCC-MPU51 ep320ipc cf745 04 p ALL-11P3 29lv640

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		PDF 1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N

    am2664be

    Abstract: rvb ah
    Text: Am2864BE Advanced Micro Devices 8192 x 8-Bit Electrically Erasable PROM DISTINCTIVE CHARACTERISTICS • • • • 5-V only operation Military temperature range available Self-timed Write Cycle with on-chip latches R eady/Busy pin and Data Polling for end-of-write


    OCR Scan     		PDF Am2864BE 32-byte 10-year Am2664BE 536-bit WF025172 rvb ah

    AM9864

    Abstract: AM2864BE-300/BXA
    Text: a Am2864BE AdVMgo 8192 X 8-Bit Electrically Erasable PRO M Devices DISTINCTIVE CHARACTERISTICS • • • • • 5-V only operation Military temperature range available Self-timed Write Cycle with on-chip latches Ready/Busy pin and Data Polling for end-of-write


    OCR Scan     		PDF Am2864BE 32-byte 10-year Am2B64BE 536-bit WF025202 WF025172 AM9864 AM2864BE-300/BXA

    Untitled

    Abstract: No abstract text available
    Text: ADV MIC RO inE 10RY}~Tb Ï Ë G5S7SEfl O O E b b l ? Am2864B 5a1 8 1 9 2 x 8 Electrically Erasable PROM Data protection features to prevent writes from occur­ ring during V cc power-up/down 32-byte page write mode Minimum endurance of 10,000 write cycles per byte with


    OCR Scan     		PDF Am2864B 32-byte 10-year Am9864 6891A) 536-bit MIL-STD-883,

    AM2864B-3

    Abstract: AM2864B-30 AM2864B-25
    Text: Am2864B 8 1 9 2 x 8 Electrically Erasable PROM • • • • 5-V only operation Military temperature range available Self-timed Write Cycle with on-chip latches Ready/Busy pin and Data Polling for end-of-write indication • Data protection features to prevent writes from occur­


    OCR Scan     		PDF Am2864B 32-byte 10-year Am9864 536-bit MIL-STD-883, AM2864B-3 AM2864B-30 AM2864B-25

    2864be

    Abstract: M2864B
    Text: Am2864BE 8192 X “'S 8-Bit Electrically Erasable PROM Devices DISTINCTIVE CHARACTERISTICS 5-V o n ly ope ra tio n M ilitary te m p e ra tu re range availab le S e lf-tim e d W rite C ycle w ith o n -c h ip la tc h e s R e a d y /B u s y pin and D a ta P olling fo r e n d -o f-w rite


    OCR Scan     		PDF Am2864BE 10-year 2864BE WF025172 2864be M2864B

    floating-gate

    Abstract: Valence eeprom memory cell
    Text: EEPROM Process Information PROCESS AND TECHNOLOGY AM D's EEPROM technology is based on the highly successful N-channel EPROM process that has had years of manufacturing history at AMD. To achieve the goal of electrical erasability, an additional masking step


    OCR Scan     		PDF 0324A-006A floating-gate Valence eeprom memory cell

    eeprom 2864a

    Abstract: X2864AD X2864ADMB-25 2864A X2864ADMB X2864ADMB35 X2864BDMB DQ2864-250 X2864ADI35 X2864AEMB25
    Text: Cross-Reference and Conversion Guides COMPETITOR CROSS-REFERENCE GUIDE and DC timing and operating characteristics that are different. Please consult the data sheets or your local AMD representative for more details. The following table serves as a cross-reference guide for


    OCR Scan     		PDF 28-Pln X2864AD-25 X2864AD X2864AD-35 X2864AD-45 X2864ADI-25 X2864ADI X2864ADI-35 X2864ADI-45 X2864ADM-25 eeprom 2864a X2864ADMB-25 2864A X2864ADMB X2864ADMB35 X2864BDMB DQ2864-250 X2864ADI35 X2864AEMB25

    Untitled

    Abstract: No abstract text available
    Text: Am28C256 3 2Kx8 Electrically Erasable PROM Am28C256 ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS • • • 5-V only operation Military temperature range available Low-power CMOS - 60 mA active current - 1 mA standby current • • • - 1 0 0 pA power-down current


    OCR Scan     		PDF Am28C256 64-byte

    M38510

    Abstract: No abstract text available
    Text: REVISIONS DATE YR-MO-QA LTR DESCRIPTION A E d ito ria l changes throughout. Table I changes include: Vjh change, regrouped devices to d ifferen t lim its . Table I I , subgroups changed. Figures have been combined, some deleted. Quality Assurance and Quality conformance inspection paragraphs


    OCR Scan     		PDF M38510/228XXBXX. 5SO-547 M38510

    am28c256

    Abstract: No abstract text available
    Text: Am28C256 3 2 K x 8 Electrically Erasable PROM DISTINCTIVE CHARACTERISTICS • • • 5-V only operation Military temperature range available Low-power CMOS - 60 mA active current - 1 mA standby current • • • - 100 /uA power-down current 64-byte page write


    OCR Scan     		PDF Am28C256 64-byte Am2864A Am2864B

    X2864AD

    Abstract: X2864AEMB25 X2864AEMB-25 X2864ADMB-25 X2864AEMB X2864AEMB-35 X2864ADMB 60395 X2864ADMB-35 DM2864H-250
    Text: REVISIONS DATE YR-MO-OA LTR DESCRIPTION A Editorial changes throughout. Table I changes include: V jh change, regrouped devices to different limits. Table II, subgroups changed. Figures have been combined, some deleted. Quality Assurance and Quality conformance inspection paragraphs


    OCR Scan     		PDF 5962-8683010XX 5962-8683010YX 5962-8683010ZY M38510/228XXBXX. X2864AD X2864AEMB25 X2864AEMB-25 X2864ADMB-25 X2864AEMB X2864AEMB-35 X2864ADMB 60395 X2864ADMB-35 DM2864H-250

    EEPROM 2864 INTEL

    Abstract: EEPROM 2864 2864 eeprom 2864 eeprom intel intel 2864 2864 rom CI EEPROM 2864 hn58064p-25 HN58064P-30 SEEQ 52B33
    Text: - 76 - 2 3 6 4 m & tt £ iá g íc S l °C X4 '/ % > TAAC max (ns) TCAC max (ns) TOH ta x (ns) TO E max (ns) TO D max (ns) VDD (V) -h A SSL I DD/STAÍDBY (nA) V IL Biax (V) V IH min (V) ai C i max (pF) -h/m%n, m V O L / I VOL max (V/mA) V O H / IV O H min


    OCR Scan     		PDF 52B33-200 52B33-300 52B33-350 52B33/H-250 KM2864A-30 KM2864AH-20 192x8) 28PIN EEPROM 2864 INTEL EEPROM 2864 2864 eeprom 2864 eeprom intel intel 2864 2864 rom CI EEPROM 2864 hn58064p-25 HN58064P-30 SEEQ 52B33

    am28c256

    Abstract: No abstract text available
    Text: ADV M IC R O ÍM E H O R Y } l b De | [1 2 5 7 5 2 6 Am28C256 0G2fe.fe.2fl i 27 32K x 8 Electrically Erasable PROM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS • • • 5-V only operation Military temperature range available Low-power CMOS - 60 mA active current


    OCR Scan     		PDF Am28C256 64-byte

    eeprom 2864a

    Abstract: AM2864A-2 rgv 527 Am2864A-3
    Text: Am2864A DISTINCTIVE CHARACTERISTICS • • • • • 5-V only operation Military temperature range available Self-timed Write Cycle with on-chip latches Data Polling for end-of-write indication Data protection features to prevent writes from occur­ ring during V c c power-up/down


    OCR Scan     		PDF Am2864A 32-byte 10-year Am9864 536-bit eeprom 2864a AM2864A-2 rgv 527 Am2864A-3

    X2864Aemb-25

    Abstract: X2864ADMB-25 74K-IM-W9U 20/AM2864A-25/BXA X2864ADMB35 X2864AD m2864 x2864aemb35 X2864AEMB25 WF vqe 24 e
    Text: REVISIONS DATE YR-MO-OA LTR DESCRIPTION A E d ito r ia l changes th ro ug h ou t. Table I changes in c lu d e : Vjh change, regrouped devices to d if f e r e n t lim it s . Table I I , subgroups changed. Figures have been combined, some d e le te d . Q u a lity Assurance and Q u a lity conformance in s p e c tio n paragraphs


    OCR Scan     		PDF M38510/228 5962-8683010XX 5962-8683010YX 5962-8683010ZY M38510/228XXBXX. M11pitas, X2864Aemb-25 X2864ADMB-25 74K-IM-W9U 20/AM2864A-25/BXA X2864ADMB35 X2864AD m2864 x2864aemb35 X2864AEMB25 WF vqe 24 e

    Untitled

    Abstract: No abstract text available
    Text: n Am2864AE Advanced Micro Devices 8192 x 8-Bit Electrically Erasable PROM DISTINCTIVE CHARACTERISTICS • • • • • 5-V only operation Military temperature range available Self-timed Write Cycle with on-chip latches Data Polling for end-of-write indication


    OCR Scan     		PDF Am2864AE 32-byte 10-year 536-bit A0-A12>

    TDA 2051

    Abstract: AM2864AE-255DC
    Text: a Am2864AE Adva“ £ 8192 x 8-Bit Electrically Erasable PROM Devices DISTINCTIVE CHARACTERISTICS • • • • • 5-V only operation Military temperature range available Self-timed Write Cycle with on-chip latches Data Polling for end-of-write indication


    OCR Scan     		PDF Am2864AE 32-byte 10-year 536-bit wf025150 TDA 2051 AM2864AE-255DC

    Untitled

    Abstract: No abstract text available
    Text: EEPROM Highlights WHY USE EEPROMS? A wide spectrum of memory devices have been devel­ oped to fill particular needs. Read-Only Memories ROMs have high density and fast data access. The biggest disadvantage is the production volume required with an unalterable data pattern. Random-Access


    OCR Scan     		PDF Am2864BE Am2864AE