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    AQV41 Search Results

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    AQV41 Price and Stock

    Panasonic Electronic Components AQV414S

    SSR RELAY SPST-NC 100MA 0-400V
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    DigiKey AQV414S Tube 1,494 1
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    Panasonic Electronic Components AQV410EHA

    SSR RELAY SPST-NC 130MA 0-350V
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    DigiKey AQV410EHA Tube 1,221 1
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    Panasonic Electronic Components AQV410EHAX

    SSR RELAY SPST-NC 130MA 0-350V
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    DigiKey AQV410EHAX Reel 1,000 1,000
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    AQV410EHAX Cut Tape 1,000 1
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    AQV410EHAX Digi-Reel 1,000 1
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    Mouser Electronics AQV410EHAX 1,000
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    Panasonic Electronic Components AQV414AZ

    SSR RELAY SPST-NC 120MA 0-400V
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    DigiKey AQV414AZ Cut Tape 907 1
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    AQV414AZ Digi-Reel 907 1
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    Avnet Americas AQV414AZ Reel 14 Weeks 1,000
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    Quest Components AQV414AZ 1,807
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    Panasonic Electronic Components AQV412EHAX

    SSR RELAY SPST-NC 550MA 0-60V
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    DigiKey AQV412EHAX Cut Tape 738 1
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    Avnet Americas AQV412EHAX Reel 14 Weeks 1,000
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    Mouser Electronics AQV412EHAX 900
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    Find more AQV41 price and stock on Findchips.com

    AQV41 Datasheets (84)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AQV410 Panasonic PhotoMOS RELAYS Original PDF
    AQV410E NEC Optocoupler & Solid State Relay Cross Reference Guide Original PDF
    AQV410EA NEC Optocoupler & Solid State Relay Cross Reference Guide Original PDF
    AQV410EAX NEC Optocoupler & Solid State Relay Cross Reference Guide Original PDF
    AQV410EAZ NEC Optocoupler & Solid State Relay Cross Reference Guide Original PDF
    AQV410EH Panasonic Solid State Relay (with MOSFET Output) 6pin DIP (Form B, Normally-Closed) Original PDF
    AQV410EH Panasonic GU (General Use)-E Type (1-Channel (Form B) Type) PhotoMOS RELAY Original PDF
    AQV410EH Panasonic PhotoMOS relay, GU (general use) E-type [1-channel (form B) type]. AC/DC type. I/O isolation: reanforced 5,000 VAC. Output rating: load voltage 350 V, load current 130 mA. Through hole terminal. Tube packing style. Original PDF
    AQV410EHA Panasonic Solid State Relay (with MOSFET Output) 6pin DIP (Form B, Normally-Closed) Original PDF
    AQV410EHA Panasonic PhotoMOS relay, GU (general use) E-type [1-channel (form B) type]. AC/DC type. I/O isolation: reanforced 5,000 VAC. Output rating: load voltage 350 V, load current 130 mA. Surface-mount terminal. Tube packing style. Original PDF
    AQV410EHA Panasonic GU (General Use)-E Type (1-Channel (Form B) Type) PhotoMOS RELAY Original PDF
    AQV410EHAX Panasonic Solid State Relay (with MOSFET Output) 6pin DIP (Form B, Normally-Closed) Original PDF
    AQV410EHAX Panasonic GU (General Use)-E Type (1-Channel (Form B) Type) PhotoMOS RELAY Original PDF
    AQV410EHAX Panasonic PhotoMOS relay, GU (general use) E-type [1-channel (form B) type]. AC/DC type. I/O isolation: reanforced 5,000 VAC. Output rating: load voltage 350 V, load current 130 mA. Surface-mount terminal. Tape and reel packing style. Picked from the 1/2/3-pin side Original PDF
    AQV410EHAZ Panasonic Solid State Relays, Relays, RELAY OPTO SPST 130MA 6 SMD T/R Original PDF
    AQV410EHAZ Panasonic PhotoMOS relay, GU (general use) E-type [1-channel (form B) type]. AC/DC type. I/O isolation: reanforced 5,000 VAC. Output rating: load voltage 350 V, load current 130 mA. Surface-mount terminal. Tape and reel packing style. Picked from the 4/5/6-pin side Original PDF
    AQV410EHAZ Panasonic GU (General Use)-E Type (1-Channel (Form B) Type) PhotoMOS RELAY Original PDF
    AQV412EH Panasonic Electric Works Relays - Solid State Relays - SSR RELAY SPST-NC 550MA 0-60V Original PDF
    AQV412EHA Panasonic Solid State Relays, Relays, PHOTOMOS(MOS FET) RELAY Original PDF
    AQV412EHAX Panasonic Solid State Relays, Relays, PHOTOMOS(MOS FET) RELAY Original PDF

    AQV41 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AQV412

    Abstract: 414EH AQV414EAZ AQV414 AQV410
    Text: GU-E 1 Form B AQV414E, AQV41EH VDE (AQV412EH) VDE TESTING (Standard type) Normally closed DIP6-pin economic type with reinforced insulation (AQV410EH, 414EH) (AQV410EH, 414EH) (Reinforced type) GU-E 1 Form B (AQV414E, AQV41EH) AQV414E, FEATURES 3.9


    Original     		AQV414E, AQV41EH) AQV412EH) AQV410EH, 414EH) AQV412 414EH AQV414EAZ AQV414 AQV410 PDF

    AQV414

    Abstract: AQV414A AQV414AX AQV414E AQV414EA AQV414EH AQV414EHA LR26550
    Text: AQV41❍ PhotoMOS RELAYS GU General Use Type 1-Channel (Form B) Type FEATURES UL File No.: E43149 CSA File No.: LR26550 3. High sensitivity, low ON resistance Can control a maximum 0.12 A load current with a 5 mA input current. Low ON resistance of 50 Ω (AQV414E).


    Original     		AQV41r E43149 LR26550 AQV414E) IEC950 AQZ105 AQZ205 AQZ107 AQZ207 AQV414 AQV414A AQV414AX AQV414E AQV414EA AQV414EH AQV414EHA LR26550 PDF

    414EH

    Abstract: AQV412EHA AQV412 AQV410EH AQV412EH AQV414E AQV414EA AQV414EAX AQV414EH AQV410
    Text: GU-E 1 Form B AQV414E, AQV41PEH VDE VDE TESTING (AQV412EH) (Standard type) Normally closed DIP6-pin economic type with reinforced insulation (AQV410EH, 414EH) (AQV410EH, 414EH) (Reinforced type) GU-E 1 Form B (AQV414E, AQV41PEH) FEATURES 1. High cost-performance type of


    Original     		AQV414E, AQV41 AQV412EH) AQV410EH, 414EH) AQV410EH 414EH AQV412EHA AQV412 AQV412EH AQV414E AQV414EA AQV414EAX AQV414EH AQV410 PDF

    smoke detector schematic diagrams

    Abstract: DW-AS-603-M12 schematic diagram dc to ac converter ultrasonic range meter IC electromagnetic relay HOW TO DRIVE SSR USING MOSFET DRIVER triac drive circuit pulse transformer Transistors Diodes smd e2 5 pins relay pin diagram convertor DC input 24 v output 5 v 2A
    Text: AQV41❍ PhotoMOS RELAYS GU General Use Type 1-Channel (Form B) Type FEATURES UL File No.: E43149 CSA File No.: LR26550 3. High sensitivity, low ON resistance Can control a maximum 0.12 A load current with a 5 mA input current. Low ON resistance of 50 Ω (AQV414E).


    Original     		AQV41r E43149 LR26550 AQV414E) IEC950 AQZ105 AQZ205 AQZ107 AQZ207 smoke detector schematic diagrams DW-AS-603-M12 schematic diagram dc to ac converter ultrasonic range meter IC electromagnetic relay HOW TO DRIVE SSR USING MOSFET DRIVER triac drive circuit pulse transformer Transistors Diodes smd e2 5 pins relay pin diagram convertor DC input 24 v output 5 v 2A PDF

    smoke detector schematic diagrams

    Abstract: diagram 3 phase heater schematic diagram ac-dc supply smoke sensor schematic Transistors Diodes smd e2 schematic diagram heater ultrasonic Phase Frequency detector AQS610TS AQV410EH AQV410EHA
    Text: AQV410EH PhotoMOS RELAYS GU General Use -E Type 1-Channel (Form B) Type FEATURES 8.8 .346 1. Low on resistance for normallyclosed type This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method.


    Original     		AQV410EH EN41003, smoke detector schematic diagrams diagram 3 phase heater schematic diagram ac-dc supply smoke sensor schematic Transistors Diodes smd e2 schematic diagram heater ultrasonic Phase Frequency detector AQS610TS AQV410EH AQV410EHA PDF

    Untitled

    Abstract: No abstract text available
    Text: GU-E 1 Form B AQV414E, AQV41EH VDE (AQV412EH) VDE (Standard type) Normally closed DIP6-pin economic type with reinforced insulation (AQV410EH, 414EH) (AQV410EH, 414EH) (Reinforced type) GU-E 1 Form B (AQV414E, AQV41EH) AQV414E, FEATURES 3.9 .154 6.4


    Original     		AQV414E, AQV41ï AQV412EH) AQV410EH, 414EH) PDF

    XCA111

    Abstract: LCA111E xca111l LCA111 PFA113A XCA110 PFA122A okita Aromat relays PFA141A
    Text: High-Voltage Solid State Relays Cross Reference† Aromat Matsushita Infineon Aromat (Matsushita) Infineon CP Clare Infineon AQV101 LH1517AT AQV414A LH1501AAB LCA142/E LH1510AT AQV101A LH1517AAB AQW214 LH1550AT1 LH1517AT LH1520AB LH1526AB LCA143 AQV102 LCA143E


    Original     		AQV101 LH1517AT AQV414A LH1501AAB LCA142/E LH1510AT AQV101A LH1517AAB AQW214 LH1550AT1 XCA111 LCA111E xca111l LCA111 PFA113A XCA110 PFA122A okita Aromat relays PFA141A PDF

    AQV414

    Abstract: AQV414A AQV414AX AQV414AZ
    Text: ✷❉o❏oMO✺.❃ook ✷❂❈❆ ✬✩ ✻❉❑❍•❅❂❖, M❂❍❄❉ ✥✩, ✥✣✣✬ ✥:✥✤ ✷M GU 1 Form B AQV414 Normally closed 6-pin type of 400V load voltage GU 1 Form B (AQV414) FEATURES 3.9 .154 6.4 .252 8.8 .346 3.6 .142


    Original     		AQV414) AQV414 AQV414A AQV414AX AQV414AZ PDF

    414EH

    Abstract: AQV410EH AQV412EH AQV412EHA AQV414E AQV414EA AQV414EH AQV412
    Text: ✷❉o❏oMO✺.❃ook ✷❂❈❆ ✤✧✣ ✻❉❑❍•❅❂❖, M❂❍❄❉ ✥✩, ✥✣✣✬ ✥:✥✤ ✷M GU-E 1 Form B AQV414E, AQV41❍EH VDE (AQV412EH) VDE TESTING (Standard type) Normally closed DIP6-pin economic type with reinforced insulation


    Original     		AQV414E, AQV41EH) AQV412EH) AQV410EH, 414EH) 414EH AQV410EH AQV412EH AQV412EHA AQV414E AQV414EA AQV414EH AQV412 PDF

    RELAY

    Abstract: AQV414 AQV414A
    Text: AQV414 / AQV414A HIGH VOLTAGE, PHOTO MOS RELAY 65 Shark River Road, Neptune, New Jersey 07753-7423 Tel: 732-922-6333 Fax: 732-922-6363 E-Mail: globalcomponents@msn.com 65 Shark River Road, Neptune, New Jersey 07753-7423 Tel: 732-922-6333 Fax: 732-922-6363 E-Mail: globalcomponents@msn.com


    Original     		AQV414 AQV414A RELAY AQV414A PDF

    AQV414

    Abstract: AQV414A AQV414AX AQV414AZ Panasonic RELAY Cross Reference
    Text: GU 1 Form B AQV414 Normally closed 6-pin type of 400V load voltage GU 1 Form B (AQV414) FEATURES 1. Low on-resistance (typ. 26Ω) for normally-closed type This has been achieved thanks to the built-in MOSFET processed by our proprietary method, DSD (Doublediffused and Selective Doping) method.


    Original     		AQV414) aqv414: 140509J AQV414 AQV414A AQV414AX AQV414AZ Panasonic RELAY Cross Reference PDF

    Untitled

    Abstract: No abstract text available
    Text: GU PhotoMOS AQV414S GU PhotoMOS (AQV414S) GU (General Use) Type SOP Series [1-Channel (Form B) Type] (DIP) 4.4 .173 6.3 .248 (SOP) Approx. 25% 2.1 .083 Volume mm inch Approx. 50% 1 6 2 5 3 4 Footprint 2. Low on resistance (Max. 50 Ω) at 400 V for normally-closed type


    Original     		AQV414S) PDF

    Untitled

    Abstract: No abstract text available
    Text: GU PhotoMOS AQV414 GU PhotoMOS (AQV414) DIP (1 Form B) 6-pin type. Controls load voltage 400V. FEATURES 6.4 .252 8.8 .346 1. Low on resistance for normallyclosed type This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Doublediffused and Selective Doping) method.


    Original     		AQV414) PDF

    Untitled

    Abstract: No abstract text available
    Text: Standard type TESTING VDE (Reinforced type) GU-E PhotoMOS (AQV414E, AQV41❍EH) General use and economy type. DIP (1 Form B) 6-pin type. Reinforced insulation 5,000V type. ; ; 4. Low-level off state leakage current The SSR has an off state leakage current


    Original     		AQV414E, AQV41EH) AQV414E) EN41003, EN60950 AQV414EH AQV410EH AQV410EH AQV414E PDF

    AQV414S

    Abstract: AQV414SX AQV414SZ
    Text: ✷❉o❏oMO✺.❃ook ✷❂❈❆ ✬✥ ✻❉❑❍•❅❂❖, M❂❍❄❉ ✥✩, ✥✣✣✬ ✥:✥✤ ✷M GU SOP 1 Form B AQV414S Normally closed SOP6-pin type of 400V load voltage GU SOP 1 Form B (AQV414S) FEATURES 6.3 .248 4.4 .173 2.1 .083


    Original     		AQV414S) AQV414S AQV414SX AQV414SZ PDF

    Untitled

    Abstract: No abstract text available
    Text: GU SOP 1 Form B AQV414S Normally closed SOP6-pin type of 400V load voltage GU SOP 1 Form B (AQV414S) FEATURES 6.3 .248 4.4 .173 2.1 .083 mm inch 1 1. Miniature SOP6-pin package The device comes in a small SOP measuring (W) 4.4 x (L) 6.3 ×(H) 2.1 mm (W) .173× (L) .248×(H) .083 inch approx.


    Original     		AQV414S) ASCTB139E 201201-T PDF

    414EH

    Abstract: AQV410EH AQV412EH AQV414E AQV414EA AQV414EAX AQV414EAZ
    Text: GU-E PhotoMOS AQV414E, AQV41❍EH VDE TESTING (AQV412EH) (Standard type) General use and economy type. DIP (1 Form B) 6-pin type. Reinforced insulation 5,000V type. 6.4 .252 8.8 .346 3.9 .154 6.4 .252 8.8 .346 3.6 .142 mm inch 6 2 5 3 4 Cross section of the normally-closed type of


    Original     		AQV414E, AQV41EH) AQV412EH) AQV410EH AQV412EH 414EH AQV412EH AQV414E AQV414EA AQV414EAX AQV414EAZ PDF

    AQV414S

    Abstract: AQV414SX AQV414SZ
    Text: GU SOP 1 Form B AQV414S Normally closed SOP6-pin type of 400V load voltage GU SOP 1 Form B (AQV414S) FEATURES 6.3 .248 4.4 .173 2.1 .083 mm inch 1 1. Miniature SOP6-pin package The device comes in a small SOP measuring (W) 4.4 x (L) 6.3 ×(H) 2.1 mm (W) .173× (L) .248×(H) .083 inch approx.


    Original     		AQV414S) aqv414s: 140509J AQV414S AQV414SX AQV414SZ PDF

    AQV412

    Abstract: 414EH AQV410EH AQV412EH AQV414E AQV414EA AQV414EAX AQV414EAZ
    Text: GU-E PhotoMOS AQV414E, AQV41❍EH VDE TESTING (AQV412EH) (Standard type) General use and economy type. DIP (1 Form B) 6-pin type. Reinforced insulation 5,000V type. 6.4 .252 8.8 .346 3.9 .154 6.4 .252 8.8 .346 3.6 .142 mm inch 1 6 2 5 3 4 (Reinforced type)


    Original     		AQV414E, AQV41EH) AQV412EH) AQV410EH) AQV410EH AQV414EH AQV412EH AQV414E AQV412 414EH AQV412EH AQV414E AQV414EA AQV414EAX AQV414EAZ PDF

    Untitled

    Abstract: No abstract text available
    Text: GU 1 Form B AQV414 Normally closed 6-pin type of 400V load voltage GU 1 Form B (AQV414) AQV414 FEATURES 8.8 .346 3.9 .154 6.4 .252 8.8 .346 3. High sensitivity and low onresistance Can control max. 0.15 A load current with 5 mA input current. 4. Low-level off state leakage current


    Original     		AQV414) AQV414 aqv414: 010611J PDF

    Untitled

    Abstract: No abstract text available
    Text: Standard type TESTING VDE (Reinforced type) GU-E PhotoMOS (AQV414E, AQV41❍EH) General use and economy type. DIP (1 Form B) 6-pin type. Reinforced insulation 5,000V type. ; ; 4. Low-level off state leakage current The SSR has an off state leakage current


    Original     		AQV414E, AQV41EH) AQV414E) EN41003, EN60950 AQV414EH AQV410EH AQV410EH AQV414E PDF

    nais relay cross reference

    Abstract: No abstract text available
    Text: GU PhotoMOS AQV414 DIP (1 Form B) 6-pin type. Controls load voltage 400V. FEATURES 6.4 .252 8.8 .346 1. Low on resistance for normallyclosed type This has been realized thanks to the builtin MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method.


    Original     		AQV414) nais relay cross reference PDF

    Untitled

    Abstract: No abstract text available
    Text: GU PhotoMOS AQV414 DIP (1 Form B) 6-pin type. Controls load voltage 400V. FEATURES 6.4 .252 8.8 .346 1. Low on resistance for normallyclosed type This has been realized thanks to the builtin MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method.


    Original     		AQV414) PDF

    Untitled

    Abstract: No abstract text available
    Text: AQV410 PhotoMOS RELAYS GU General Use Type 1-Channel (Form B) Type FEATURES UL File No.: E43149 CSA File No.: LR26550 1. Low on resistance fo r normallyclosed type This has been realized thanks to the built-in MOSFET processed by our pro­ prietary method, DSD (Double-diffused


    OCR Scan     		AQV410 AQV414E) IEC950 E43149 LR26550 PDF