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    APT200GT60JR Price and Stock

    Microchip Technology Inc APT200GT60JR

    IGBT MOD 600V 195A 500W SOT227
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    DigiKey APT200GT60JR Tray 20
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    Future Electronics APT200GT60JR 20
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    Microchip Technology Inc APT200GT60JR
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    TME APT200GT60JR 1
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    NAC APT200GT60JR Tube 8
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    APT200GT60JR Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT200GT60JR Microsemi Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP ; BV(CES) (V): 600; VCE(sat) (V): 2.5; IC (A): 100; Original PDF
    APT200GT60JRDL Microsemi Insulated Gate Bipolar Transistor - Resonant Mode; Package: ISOTOP ; BV(CES) (V): 600; VCE(sat) (V): 2.5; IC (A): 100; Original PDF
    APT200GT60JRDQ4 Microsemi Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP ; BV(CES) (V): 600; VCE(sat) (V): 2.5; IC (A): 100; Original PDF

    APT200GT60JR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: APT200GT60JR 600V, 200A, VCE ON = 2.1V Typical Thunderbolt IGBT E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		PDF APT200GT60JR 50KHz E145592

    Untitled

    Abstract: No abstract text available
    Text: TYPICAL PERFORMANCE CURVES APT200GT60JRDL APT200GT60JRDL 600V, 200A, VCE ON = 2.0V Typical Resonant Mode Combi IGBT The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		PDF APT200GT60JRDL 50KHz

    Untitled

    Abstract: No abstract text available
    Text: TYPICAL PERFORMANCE CURVES APT200GT60JRDL APT200GT60JRDL 600V, 200A, VCE ON = 2.0V Typical Resonant Mode Combi IGBT The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		PDF APT200GT60JRDL 50KHz

    Untitled

    Abstract: No abstract text available
    Text: APT200GT60JRDQ4 600V, 200A, VCE ON = 2.0V Typical Thunderbolt IGBT E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		PDF APT200GT60JRDQ4 50KHz E145592

    APT200GT60JRDL

    Abstract: No abstract text available
    Text: TYPICAL PERFORMANCE CURVES APT200GT60JRDL APT200GT60JRDL 600V, 200A, VCE ON = 2.0V Typical Resonant Mode Combi IGBT The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		PDF APT200GT60JRDL 50KHz APT200GT60JRDL

    Untitled

    Abstract: No abstract text available
    Text: APT200GT60JRDQ4 600V, 200A, VCE ON = 2.0V Typical Thunderbolt IGBT E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		PDF APT200GT60JRDQ4 50KHz E145592

    Untitled

    Abstract: No abstract text available
    Text: APT200GT60JR 600V, 200A, VCE ON = 2.1V Typical Thunderbolt IGBT E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		PDF APT200GT60JR 50KHz E145592 OT-227

    APT100DQ60

    Abstract: APT200GT60JR
    Text: APT200GT60JR 600V, 200A, VCE ON = 2.1V Typical Thunderbolt IGBT E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		PDF APT200GT60JR 50KHz E145592 APT100DQ60 APT200GT60JR

    APT100DQ60

    Abstract: APT200GT60JRDQ4
    Text: APT200GT60JRDQ4 600V, 200A, VCE ON = 2.0V Typical Thunderbolt IGBT E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		PDF APT200GT60JRDQ4 50KHz E145592 APT100DQ60 APT200GT60JRDQ4

    33182

    Abstract: APT100DQ60 IGBT GS Thunderbolt IGBT APT200GT60JR APT100 apt100d
    Text: APT200GT60JR 600V, 200A, VCE ON = 2.1V Typical Thunderbolt IGBT E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		PDF APT200GT60JR 50KHz E145592 33182 APT100DQ60 IGBT GS Thunderbolt IGBT APT200GT60JR APT100 apt100d

    smps 1000W

    Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
    Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain


    Original     		PDF des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit

    LE79Q2281

    Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
    Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security


    Original     		PDF