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    APT100GN120J Price and Stock

    Microchip Technology Inc APT100GN120J

    IGBT MOD 1200V 153A 446W ISOTOP
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    Mouser Electronics APT100GN120J 20
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    Newark APT100GN120J Bulk 20
    • 1 $37.51
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    Microchip Technology Inc APT100GN120J
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    Onlinecomponents.com APT100GN120J
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    TME APT100GN120J 1
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    NAC APT100GN120J Tube 10
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    Master Electronics APT100GN120J
    • 1 $36.4
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    Microchip Technology Inc APT100GN120JDQ4

    IGBT MOD 1200V 153A 446W ISOTOP
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    DigiKey APT100GN120JDQ4 Tube 10
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    Avnet Americas APT100GN120JDQ4 Tube 28 Weeks 10
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    Mouser Electronics APT100GN120JDQ4
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    Newark APT100GN120JDQ4 Bulk 10
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    Microchip Technology Inc APT100GN120JDQ4
    • 1 $55.64
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    TME APT100GN120JDQ4 1
    • 1 $80.41
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    NAC APT100GN120JDQ4 Tube 6
    • 1 $51.6
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    Richardson RFPD APT100GN120JDQ4 10
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    Avnet Silica APT100GN120JDQ4 30 Weeks 10
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    Master Electronics APT100GN120JDQ4
    • 1 $53.97
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    APT100GN120J Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    APT100GN120J Microsemi Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequ Original PDF
    APT100GN120JDQ4 Microsemi Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP ; BV(CES) (V): 1200; IC (A): 70; Original PDF

    APT100GN120J Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT100DQ120

    Abstract: APT100GN120J MIC4452
    Text: APT100GN120J 1200V TYPICAL PERFORMANCE CURVES APT100GN120J E E Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE ON and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and


    Original
    PDF APT100GN120J APT100DQ120 APT100GN120J MIC4452

    APT100DQ120

    Abstract: APT100GN120JDQ4
    Text: APT100GN120JDQ4 1200V, 100A, VCE ON = 1.7V Typical Utilizing the latest Field Stop and Trench Gate technologies, these IGBT’s have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a


    Original
    PDF APT100GN120JDQ4 E145592 APT100DQ120 APT100GN120JDQ4

    Untitled

    Abstract: No abstract text available
    Text: APT100GN120J 1200V TYPICAL PERFORMANCE CURVES APT100GN120J E E Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE ON and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and


    Original
    PDF APT100GN120J

    Untitled

    Abstract: No abstract text available
    Text: APT100GN120JDQ4 1200V, 100A, VCE ON = 1.7V Typical Utilizing the latest Field Stop and Trench Gate technologies, these IGBT’s have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a


    Original
    PDF APT100GN120JDQ4 E145592

    Untitled

    Abstract: No abstract text available
    Text: APT100GN120JDQ4 1200V, 100A, VCE ON = 1.7V Typical Utilizing the latest Field Stop and Trench Gate technologies, these IGBT’s have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a


    Original
    PDF APT100GN120JDQ4 fi-227

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original
    PDF 10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter

    smps 1000W

    Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
    Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain


    Original
    PDF des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit

    sot-227 footprint

    Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G
    Text: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original
    PDF

    SOT-227 lead frame

    Abstract: 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series
    Text: Power Matters High Reliability Up-Screened Plastic Products Portfolio TRANSIENT VOLTAGE SUPPRESSORS MOSFETs IGBTs RECTIFIERS About Microsemi’s High-Reliability Screened Devices Standard commercial grade semiconductor testing may not detect some types of problems such as cracked die or ionic


    Original
    PDF MIL-PRF-19500, sO-268 O-220 O-220 O-247 O-264 OT-227 SOT-227 lead frame 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series

    LE79Q2281

    Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
    Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security


    Original
    PDF

    VRF2933FL

    Abstract: VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
    Text: Power Products MICROSEMI POWER PORTFOLIOPortfolio 2014-2015 Power Products New image here TBD Power Semiconductors Power Modules RF Power MOSFETs Power Matters. About Microsemi Microsemi Corporation Nasdaq: MSCC offers a comprehensive portfolio of semiconductor and system


    Original
    PDF MS5-001-14 VRF2933FL VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301

    single phase inverter IGBT

    Abstract: wind inverter Thunderbolt buck 800v igbt single phase inverter mosfet single phase full bridge inverter mosfet power inverter 500w single phase inverter SiC IGBT High Power Modules APT50GT60BRDQ2G
    Text: Product Solutions for Inverters in Distributed Power Markets Solar, Wind, UPS 1 Power Semiconductors for Inverters Your Inverter Requirements… Our Business • Comprehensive range of power semiconductor products to meet the needs of 500W to 500kW inverters


    Original
    PDF 500kW APT60N60BCSG 00E-07 00E-06 50E-06 single phase inverter IGBT wind inverter Thunderbolt buck 800v igbt single phase inverter mosfet single phase full bridge inverter mosfet power inverter 500w single phase inverter SiC IGBT High Power Modules APT50GT60BRDQ2G