Untitled
Abstract: No abstract text available
Text: Creation Date: March 21, 1996 Revision Date: October 13, 1998 DtOS AP9A107B • s e m ic o n d u c t o r 128K x 8 High Speed CMOS Static RAM Features Aptos’ high-performance CMOS, double metal technology. This highly reliable process coupled with innovative circuit
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AP9A107B
AP9A107B
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L0812
Abstract: A10C AP9A107B12TC ap9a107 ITT SHG 1,5 Hp 9347
Text: * p to s AP9A107B SEMICONDUCTOR 128K x 8 High Speed CMOS Static RAM Features Aptos’ high-performance CMOS, double metal technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns (Max .
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AP9A107B
32-Pin
28-Pin
300-Mil)
32-Pin
400-Mil)
44-Pin
L0812
A10C
AP9A107B12TC
ap9a107
ITT SHG 1,5
Hp 9347
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T32.768
Abstract: No abstract text available
Text: Creation Date: March 2 1 ,1 9 96 Revision Date: June 7 ,1 9 9 6 A P 9 A 1 07 B 128K x 8 High Speed CMOS Static RAM PRELIMINARY Features A ptos’ high-performance CMOS, double metal technology. This highly reliable process coupled with innovative circuit design techniques, yields access tim es as fast as 12 ns Max .
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32-Pin
T32.768
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