9A104-15
Abstract: AP9A104-12VC AP9A104-12TC ap9a104-12
Text: Creation Date: 2/28/96 Revision: October 6, 1998 K lp to s _ AP9A104 • s e m ic o n d u c t o r 64K Features X 16 CMOS Static RAM the device is accomplished by bringing Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Enable Low (BLE) is
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AP9A104
44-pin,
400-mil
9A104-15
AP9A104-12VC
AP9A104-12TC
ap9a104-12
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9A104-15
Abstract: AP9A104-12 ap9a-104-12 AP9A104 AP9A104-12VC A14C Outline T44 L0812
Text: Kptos AP9A104 •SEMICONDUCTOR 64K x 16 CMOS Static RAM Features • Fast access times: 10, 12, 15, and 20 ns • Fast output enable access time: 3,3, 5, and 6 ns • Multiple center power and ground pins for improved noise immunity • High-performance, low-power, CMOS double-metal
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OCR Scan
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44-pin,
400-mil
AP9A104
28-Pin
300-Mil)
32-Pin
400-Mil)
9A104-15
AP9A104-12
ap9a-104-12
AP9A104-12VC
A14C
Outline T44
L0812
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Untitled
Abstract: No abstract text available
Text: Creation Date: 2/28/96 Revision: 6/6/96 E l AP9A104 AP9B104 ADVANCED INFORMATION 5V and 3.3V, 64K x 16 CMOS Static RAM Features • Fast access times: 10, 12, 15, and 20 ns • Fast output enable access time: 3, 3, 5, and 6 ns • M ultiple center power and ground pins for improved
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OCR Scan
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PDF
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AP9A104
AP9B104
44-pin,
400-mil
AP9A104-(
AP9B104-
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