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    9A104-15

    Abstract: AP9A104-12VC AP9A104-12TC ap9a104-12
    Text: Creation Date: 2/28/96 Revision: October 6, 1998 K lp to s _ AP9A104 • s e m ic o n d u c t o r 64K Features X 16 CMOS Static RAM the device is accomplished by bringing Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Enable Low (BLE) is


    OCR Scan     		AP9A104 44-pin, 400-mil 9A104-15 AP9A104-12VC AP9A104-12TC ap9a104-12 PDF

    9A104-15

    Abstract: AP9A104-12 ap9a-104-12 AP9A104 AP9A104-12VC A14C Outline T44 L0812
    Text: Kptos AP9A104 •SEMICONDUCTOR 64K x 16 CMOS Static RAM Features • Fast access times: 10, 12, 15, and 20 ns • Fast output enable access time: 3,3, 5, and 6 ns • Multiple center power and ground pins for improved noise immunity • High-performance, low-power, CMOS double-metal


    OCR Scan     		44-pin, 400-mil AP9A104 28-Pin 300-Mil) 32-Pin 400-Mil) 9A104-15 AP9A104-12 ap9a-104-12 AP9A104-12VC A14C Outline T44 L0812 PDF

    Untitled

    Abstract: No abstract text available
    Text: Creation Date: 2/28/96 Revision: 6/6/96 E l AP9A104 AP9B104 ADVANCED INFORMATION 5V and 3.3V, 64K x 16 CMOS Static RAM Features • Fast access times: 10, 12, 15, and 20 ns • Fast output enable access time: 3, 3, 5, and 6 ns • M ultiple center power and ground pins for improved


    OCR Scan     		AP9A104 AP9B104 44-pin, 400-mil AP9A104-( AP9B104- PDF