AOT430
Abstract: AOTF470
Text: AOTF470 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOTF470 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
|
Original
|
PDF
|
AOTF470
AOTF470
O-220F
100ms
AOT430
|
Untitled
Abstract: No abstract text available
Text: AOT470/AOTF470 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOT470/AOTF470 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose
|
Original
|
PDF
|
AOT470/AOTF470
AOT470/AOTF470
O220F)
AOT470
O-220
AOTF470
O-220F
|
AON6704L
Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
Text: Selector Guide Q4 2009 United states CALIFORNIA 495 Mercury Drive Sunnyvale, CA 94085 Phone: +1 408 830-9742 Fax: +1 (408) 830-9749 TEXAS 4845 Briar Creek Dr. Flower Mound, TX 75028 Phone: +1 (972) 691-1085 Fax: +1 (972) 691-1086 CHINA Rm F, 24/F Shenzhen Special Zone Press Tower
|
Original
|
PDF
|
O-252)
O-263)
MSOP-10
SC70-3
SC70-6
SC-89-3
SC-89-6
OD523
OD923
OT23-3
AON6704L
AOZ1094
AOZ1094AI
AON7403
AOZ1242
AOZ1014AI
AOZ1212AI
AOZ1361
AON6414AL
Aoz1025
|