Untitled
Abstract: No abstract text available
Text: Rev 3:Jan 2004 AO4410, AO4410L Green Product N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4410 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate
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AO4410,
AO4410L
AO4410
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4410 SO-8
Abstract: 4410 diode MARKING CODE 18A AO4410L transistor on 4410 AO4410 rg 625 marking 62m 4410 SO8 ALPHA YEAR CODE
Text: Rev 0:Jan 2003 Rev 1:Jan 2004 Rev 2:Mar 2004 AO4410, AO4410L Lead-Free N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4410 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate
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Original
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PDF
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AO4410,
AO4410L
AO4410
AO4410L
4410 SO-8
4410
diode MARKING CODE 18A
transistor on 4410
rg 625
marking 62m
4410 SO8
ALPHA YEAR CODE
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AO4410
Abstract: AO4410L ns3340
Text: AO4410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4410 uses advanced trench technology to provide excellent RDS ON , shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a
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Original
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PDF
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AO4410
AO4410
AO4410L
AO4410L
ns3340
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Untitled
Abstract: No abstract text available
Text: AO4410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4410 uses advanced trench technology to provide excellent RDS ON , shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a
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Original
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PDF
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AO4410
AO4410
AO4410L
AO4410L
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