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    AM82731 Search Results

    AM82731 Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Type PDF
    AM82731 Advanced Semiconductor Transistor Original PDF
    AM82731-001 Advanced Semiconductor Transistor Original PDF
    AM82731-001 STMicroelectronics RF & Microwave Components Data Book 1993 Scan PDF
    AM82731-003 Advanced Semiconductor Transistor Original PDF
    AM82731-003 STMicroelectronics S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS Original PDF
    AM82731-003 STMicroelectronics RF & Microwave Transistor S-Band Radar Applications Original PDF
    AM82731-003 STMicroelectronics RF & Microwave Components Data Book 1993 Scan PDF
    AM82731-006 STMicroelectronics RF & Microwave Transistor S-Band Radar Applications Original PDF
    AM82731-006 STMicroelectronics S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS Original PDF
    AM82731-006 STMicroelectronics RF & Microwave Components Data Book 1993 Scan PDF
    AM82731-012 Advanced Semiconductor Transistor Original PDF
    AM82731-012 STMicroelectronics RF & Microwave Transistor S-Band Radar Applications Original PDF
    AM82731-012 STMicroelectronics RF & Microwave Components Data Book 1993 Scan PDF
    AM82731-025 STMicroelectronics RF & Microwave Transistor S-Band Radar Applications Original PDF
    AM82731-025 STMicroelectronics S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS Original PDF
    AM82731-025 STMicroelectronics RF & Microwave Components Data Book 1993 Scan PDF
    AM82731-050 Advanced Semiconductor Transistor Original PDF
    AM82731-050 STMicroelectronics S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS Original PDF
    AM82731-050 STMicroelectronics RF & Microwave Transistor S-Band Radar Applications Original PDF
    AM82731-050 STMicroelectronics RF & Microwave Components Data Book 1993 Scan PDF

    AM82731 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AM82731-050

    Abstract: 6.0 ca
    Text: AM82731-050 NPN RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE 400 2L FLG The AM82731-050 is a Common Base Device Designed for Pulsed SBand Pulse output and driver Applications. FEATURES INCLUDE: • Input/Output Matching • Gold Metallization • Emitter Ballasting


    Original     		PDF AM82731-050 AM82731-050 6.0 ca

    AM82731-006

    Abstract: S042 radar amplifier s-band 2.7 2.9 GHZ
    Text: AM82731-006 . . . . . RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT IMPEDANCE MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 5.5 W. MIN. WITH 5.6 dB GAIN


    Original     		PDF AM82731-006 AM82731-006 S042 radar amplifier s-band 2.7 2.9 GHZ

    radar amplifier s-band

    Abstract: radar amplifier s-band 2.7 2.9 GHZ RF NPN POWER TRANSISTOR 2.5 GHZ AM82731-025
    Text: AM82731-025 . . . . . RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS LOW PARASITIC, DOUBLE LEVEL METAL DESIGN REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR @ 1 dB OVERDRIVE LOW RF THERMAL RESISTANCE INPUT/OUTPUT IMPEDANCE MATCHING


    Original     		PDF AM82731-025 AM82731-025 radar amplifier s-band radar amplifier s-band 2.7 2.9 GHZ RF NPN POWER TRANSISTOR 2.5 GHZ

    s-band 50 Watt power amplifier DATASHEET

    Abstract: AM82731-050 20n50 radar amplifier s-band 2.7 2.9 GHZ
    Text: AM82731-050 . . . . . RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR 3:1 @ 1 dB OVERDRIVE LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE


    Original     		PDF AM82731-050 AM82731-050 s-band 50 Watt power amplifier DATASHEET 20n50 radar amplifier s-band 2.7 2.9 GHZ

    AM82731-012

    Abstract: No abstract text available
    Text: AM82731-012 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 12 W MIN. WITH 6.0 dB GAIN


    Original     		PDF AM82731-012 AM82731-012

    AM82731-050

    Abstract: radar amplifier s-band 2.7 2.9 GHZ
    Text: AM82731-050 . . . . . RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR 3:1 @ 1 dB OVERDRIVE LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE


    Original     		PDF AM82731-050 AM82731-050 radar amplifier s-band 2.7 2.9 GHZ

    AM82731

    Abstract: No abstract text available
    Text: AM82731 NPN RF POWER TRANSISTOR PACKAGE STYLE 400 2L FLG DESCRIPTION: The AM82731 is a Common Base Device Designed for Pulsed S-Band Radar Amplifier Applications. FEATURES INCLUDE: • Input/Output Matching • Gold Metallization • Emitter Ballasting MAXIMUM RATINGS


    Original     		PDF AM82731 AM82731

    8w RF POWER TRANSISTOR NPN

    Abstract: gold capacitor RF POWER S-band TRANSISTOR 82731 thomson capacitor AM82731-003 S042 82731003 radar amplifier s-band 2.7 2.9 GHZ
    Text: AM82731-003 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 10:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT IMPEDANCE MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE


    Original     		PDF AM82731-003 AM82731-003 8w RF POWER TRANSISTOR NPN gold capacitor RF POWER S-band TRANSISTOR 82731 thomson capacitor S042 82731003 radar amplifier s-band 2.7 2.9 GHZ

    AM82731-012

    Abstract: No abstract text available
    Text: AM82731-012 NPN RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE 400 2L FLG The AM82731-012 is a Common Base Device Designed for Pulsed SBand Pulse output and driver Radar Amplifier Applications. FEATURES INCLUDE: • Input/Output Matching • Gold Metallization


    Original     		PDF AM82731-012 AM82731-012

    AM82731-003

    Abstract: TRANSISTOR RF 1003 333p
    Text: AM82731-003 NPN RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE 400 2NL FLG The AM82731-003 is a Common Base Device Designed for Pulsed SBand Radar Pulse Driver Applications. A FEATURES INCLUDE: .025 x 45° 4x .062 x 45° 2X B • Input/Output Matching • Gold Metallization


    Original     		PDF AM82731-003 AM82731-003 TRANSISTOR RF 1003 333p

    AM82731-012

    Abstract: No abstract text available
    Text: AM82731-012 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 12 W MIN. WITH 6.0 dB GAIN


    Original     		PDF AM82731-012 AM82731-012

    Untitled

    Abstract: No abstract text available
    Text: AM82731 NPN RF POWER TRANSISTOR DESCRIPTION: The AM82731 is a Common Base Device Designed for Pulsed S-Band Radar Amplifier Applications. PACKAGE STYLE 400 2L FLG E FEATURES INCLUDE: • Input/Output Matching • Gold Metallization • Emitter Ballasting


    Original     		PDF AM82731 AM82731

    AM82731-003

    Abstract: S042
    Text: AM82731-003 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 10:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT IMPEDANCE MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE


    Original     		PDF AM82731-003 AM82731-003 S042

    AM82731-025

    Abstract: No abstract text available
    Text: AM82731-025 . . . . . RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS LOW PARASITIC, DOUBLE LEVEL METAL DESIGN REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR @ 1 dB OVERDRIVE LOW RF THERMAL RESISTANCE INPUT/OUTPUT IMPEDANCE MATCHING


    Original     		PDF AM82731-025 AM82731-025

    AM82731-001

    Abstract: 395 transistor TRANSISTOR RF 1003 m 052
    Text: AM82731-001 NPN RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE 400 2NL FLG The AM82731-001 is a Common Base Device Designed for Pulsed SBand Radar Amplifier Applications. A FEATURES INCLUDE: .025 x 45° 4x .062 x 45° 2X B • Input/Output Matching • Gold Metallization


    Original     		PDF AM82731-001 AM82731-001 395 transistor TRANSISTOR RF 1003 m 052

    MRF648

    Abstract: TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent
    Text: Cross References June 1999 RF PRODUCTS P/N CROSS REFERENCE VENDOR NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC


    Original     		PDF 2N5944 2N5945 2N5946 2N6082 2N6084 2N6439 2SC1257 2SC1258 2SC1259 2SC1605A MRF648 TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent

    "Phase Discriminator"

    Abstract: Hewlett-Packard transistor microwave AM81214-060 AM82731-050 AN569 transistor study rf power transistor
    Text: AN569 APPLICATION NOTE PHASE MEASUREMENT AND CHARACTERIZATION OF RF MICROWAVE POWER TRANSISTORS M. Deiss - R. Marley 1. ABSTRACT The continuing efforts to design and produce phased array radar systems have resulted in an increased need for relative insertion phase length data on individual microwave power transistors. The inclusion of


    Original     		PDF AN569 "Phase Discriminator" Hewlett-Packard transistor microwave AM81214-060 AM82731-050 AN569 transistor study rf power transistor

    2SC636

    Abstract: 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470
    Text: POWER RF CROSS REFERENCE INDUST RY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642


    Original     		PDF 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC636 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470

    Untitled

    Abstract: No abstract text available
    Text: SGS1H0MS0N 57. AM82731-012 ;IL11 ¥ M [ RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS P R E LIM IN AR Y DATA i R E F R A C T O R Y /G O L D M ETA LL IZA TIO N • E M IT T E R S ITE BALLASTED ■ LO W T H E R M A L R E S IS T A N C E ■ IN P U T /O U T P U T M A T C H IN G


    OCR Scan     		PDF AM82731-012 J1331Ã

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON AM82731-050 1H[ RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR 3:1 @ 1 dB OVER­ DRIVE LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE


    OCR Scan     		PDF AM82731-050 AM82731-050

    Untitled

    Abstract: No abstract text available
    Text: /= 7 SGS-THOMSON * 7 # . IMígia@HlL[l TO@iDigl_ AM82731-025 RF & MICROWAVE TRANSISTORS _ _ S-BAND RADAR APPLICATIONS I LOW PARASITIC, DOUBLE LEVEL MET­ AL DESIGN » REFRACTORY/GOLD METALLIZATION . EM ITTER SITE BALLASTED •


    OCR Scan     		PDF AM82731-025 AM82731

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON POWER TRANSISTORS Ç - pBaAiN RA D fAt R Q Ti iOmR Q a nD u H AU H Ti R kA aN nQ sI is s _ I w m SCS "THOMSON The industry leader in S-Band Power, SGS-THOMSON offers a complete line of short, medium and long pulse transistors for civil and military radar applications up to 3.5 GHz. Refractory gold metallization and emitter site-ballasting


    OCR Scan     		PDF AM82731 2931-125t AM831

    Untitled

    Abstract: No abstract text available
    Text: Ï. 5 SGS-THOMSON A M 8 2 7 3 1 -0 0 6 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EM ITTER SITE BALLASTED 5:1 VSW R CAPABILITY LOW THERMAL RESISTANCE IN PU T/O U TPU T IMPEDANCE MATCHING OVERLAY G EOM ETRY M ETAL/CERAMIC HERM ETIC PACKAGE


    OCR Scan     		PDF AM82731 00b50f