Untitled
Abstract: No abstract text available
Text: GaAs MMIC SPDT FET 4 Watt TR Switch DC–2.5 GHz AH002R2–11 Features TR Switch Medium Power Handling, 4 Watts at 1 dB, Compression at 450 MHz, –10 Volts Bias Surface Mount Package –70 dBc THD at 850 MHz with 2 Watt Input Power J2 J1 Low Power Consumption
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AH002R2â
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AH002R2-12
Abstract: SPDT SWITCH 6 GHZ 1 WATT AH002R2
Text: GaAs SPDT IC 4 Watt T/R Switch DC–2.5 GHz AH002R2-12 Features SOIC-8 • T/R Switch PIN 8 0.050 1.27 mm BSC ■ Low Insertion Loss (< 0.5 dB @ 0.9 GHz) ■ P-1 dB ≥ 4 W, 0.9 GHz, 0/-10 V Control Voltage 0.244 (6.20 mm) 0.228 (5.80 mm) PIN 1 INDICATOR
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AH002R2-12
AH002R2-12
3/99A
SPDT SWITCH 6 GHZ 1 WATT
AH002R2
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AH002R2-11
Abstract: No abstract text available
Text: GaAs IC SPDT 4 W T/R Switch DC–2.5 GHz AH002R2-11 -11 Features • Low DC Power Consumption ORIENTATION MARK ■ High Power, T/R Switch ■ 8 Lead Hermetic Surface Mount Package 0.180 4.57 mm SQ. MAX. 0.150 (3.81 mm) ■ Capable of Meeting MIL-STD Requirements5
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AH002R2-11
AH002R2-11
3/99A
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SMP1300
Abstract: SMV1299-004 SC02200912 SMV1299-001 SMV1421-001 SMV1229-011 SMP1300-01 AS174-73 SMP1300-011 AH002R2-12
Text: Customer Notification Product Discontinuance Notification September 24, 2004 Dear Valued Customer, This letter serves as notification that Skyworks Solutions, Inc has decided to discontinue the manufacturing of specific catalog part number offerings from our GaAs RFIC Switch,
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Untitled
Abstract: No abstract text available
Text: GaAs SPDT FET MMIC 4 Watt TR Switch ESAlph in 8 Lead SOIC Package DC-2.5 GHz AH002R2-12 Features • TR Switch ■ Low Insertion Loss < 0.5 dB @ 900 MHz ■ Designed for Cellular Radio Applications ■ Medium Power Handling Capability, 1 dB Compressed at 5W, 900 MHz, -1 0 V Bias
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AH002R2-12
maxi-31
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
AS004R2-11
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36dBmtyp
Abstract: SPDT SWITCH 6 GHZ 1 WATT AH002R2-12
Text: GaAs SPDT FET MMIC 4 Watt TR Switch in 8 Lead SOIC Package DC-2.5 GHz 0 A lpha AH002R2-12 Features • TR Switch ■ Low Insertion Loss < 0.5 dB @ 900 MHz ■ Designed for Cellular Radio Applications ■ Medium Power Handling Capability, 1 dB Compressed at 5W, 900 MHz, -10V Bias
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AH002R2-12
AH002R2-12
0/-12V
MA01801
36dBmtyp
SPDT SWITCH 6 GHZ 1 WATT
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Untitled
Abstract: No abstract text available
Text: GaAs 1C SPDT 4 W T/R Switch DC-2.5 GHz EBAlpha AH002R2-11 -11 Features • Low DC Power Consumption ORIENTATION , M A R K -^ _ ■ High Power, T/R Switch ■ 8 Lead Hermetic Surface Mount Package -0 .1 8 0 4.57 mm SQ. MAX. 0.150 (3.81 mm) ■ Capable of Meeting MIL-STD
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AH002R2-11
3/99A
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC SPOT FET 4 Watt TR Switch DC-2.5 GHz AH002R2-11 Features • T R Switch ■ Medium Power Handling, 4 Watts at 1 dB, Compression at 450 M Hz, - 1 0 Volts Bias ■ Surface Mount Package ■ - 7 0 dBc T H D at 850 M Hz with 2 Watt Input Power ■ Low Power Consumption
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AH002R2-11
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AH002R2
Abstract: SPDT4 AH002R2-11 GaAs IC SPDT
Text: GaAs IC S P D T 4 W T /R Switch DC-2.5 GHz EHAlpha AH002R2-11 •11 Features ■ Low DC Power Consumption ORIENTATION M AR K 0.180 4.57 mm SQ . MAX. ■ High Power, T/R Switch ■ 8 Lead Hermetic Surface Mount Package ■ Capable of Meeting MIL-STD Requirements5
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AH002R2-11
AH002R2-11
3/99A
AH002R2
SPDT4
GaAs IC SPDT
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Untitled
Abstract: No abstract text available
Text: Section 2 RF GaAs MMIC Products in Metal Packages Numerical Index Part Number Page Part Number Page Part Number Page AD004T2-00 2-44 AK006R2-01 2-30 AS006M1-01 2-8 AD004T2-11 2-44 AK006R2-10 2-30 AS006M1-10 2-a AE002M2-29 2-74 AK006R2-00 2-28 AS006M2-00 2-16
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AD004T2-00
AD004T2-11
AE002M2-29
AE002M4-05
AH002R2-11
AK002D2-11
AK002D4-11
AK002D4-31
AK002M4-00
AK002M4-31
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DSB3665-02
Abstract: No abstract text available
Text: High Power Multi-Throw UHF PIN Switches EHAlpha DSB3665-01, DSB3665-02, DSB3667-01 Features Hermetically Sealed Chips Stripline and T O -8 Can Packages SP2T and SP3T Designs 100 W att CW Operation Maximum Ratings 10 to 1000 MHz Operating Temperature: -6 5 °C to +150°C
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DSB3665-01,
DSB3665-02,
DSB3667-01
DSB3665
DSB3667
ch8-31
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
DSB3665-02
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC Power Amplifier [jHAIph in S O I C 16 Plastic Package AP103-64 Features • Saturated Power Up To 31 dBm ■ 6 Volt Operation ■ Efficiency Up To 65% ■ Idle Current Typically Less Than 80 mA ■ On Chip Bias Network Converts - 4 Volt Supplies
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AP103-64
SOIC16
AP103-64
ce8-31
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC 2 Watt High Linearity ËBÀlph Cellular SPDT Switch DC-2000 MHz A S 1 16-59 Features • High Linearity 50 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Extremely Low Cost ■ Requires Fixed Positive Bias ■
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DC-2000
of-31
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
AS004R2-11
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Untitled
Abstract: No abstract text available
Text: •ísSKS GaAs MMIC Two Watt High î ? ‘ 1 _. Linearity Cellular SPDT Switch EBAIp'hi AS103-59 Features ■ High Linearity 55 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Both Positive and/or Negative 3 to 10V Control
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AS103-59
AS103-59
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
AS004R2-11
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC SPDT FET Switch EBAlph Reflective DC-6 GHz AS006R2-01, AS006R2-10, AS004R2-08, AS004R2-11 Features • Broadband D C -6 GHz ■ Low Loss ■ Reflective Open ■ Low D.C. Power Consumption ■ Excellent Intermodulation ProductVTemp. Stability ■
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AS006R2-01,
AS006R2-10,
AS004R2-08,
AS004R2-11
AS004R2â
AS006R2â
AS006R2-01)
AK006L1-01
AS004M2-11
AT002N5-00
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Untitled
Abstract: No abstract text available
Text: ALPHA IN»/ S E M I C O N D U C T O bME D • 05flS4M3 OOOlñflñ 1«J3 ■ ALP . MMICs Diversity Switches in SOIC Packages
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05flS4M3
ADC02D2-12
ADH01D2-24
ADHD1D2-24
AH002R2-12
002R2-12
ASC02S2-12
ASD01R2-12
ASD02R2-12
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SMS1526-10
Abstract: No abstract text available
Text: Schottky Mixer and Detector Diodes in EEAlpha Surface Mount Plastic Packages SMS Series Features For High Volume Commercial Applications SOT 23 SOD 323 S m all Surface M ount Packages SOT 143 Low C onversion Loss T ight P aram eter D istribution High Signal Sensitivity
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AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
AS004R2-11
AT002N5-10
AK006M1-01
SMS1526-10
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC Two Watt High Linearity EH Alpha Cellular SPDT Switch in SS0P8 Package AS358-62 Features • High Linearity 55 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Both Positive and/or Negative 3 to 10 V Control Voltages
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AS358-62
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
AS004R2-11
AT002N5-10
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC SPDT FET Switch Non-Reflective DC-6 GHz • EBAlph . . . . - . * »■ ■ ■ ■V.s-l AS006M2-01, AS006M2-10, AS004M2-08, AS004M2-11 Features ■ Broadband DC-6 GHz ■ Non-Reflective ■ Low DC Power Consumption ■ Excellent Intermodulation ProductsYTemp. Stability
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AS006M2-01,
AS006M2-10,
AS004M2-08,
AS004M2-11
AS006M2-10
MIL-STD-883
AK006L1-01
AT002N5-00
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC FET Transfer Switch DC-4 GHz AD004T2-00, AD004T2-11 Features Broad Bandwidth Low DC Power Dissipation < 20 ^A Low Differential Phase Between Paths Meets M IL -S T D -88 3 Screening Requirements J2 Chip Size 30 x 39 x 8 Mils J3 Description The A D 004T2-00 is a GaAs 4 Port FET switch
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AD004T2-00,
AD004T2-11
004T2-00
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
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AF002C1-32
Abstract: AF002C1-39 E 212 fet AS006M2-10 AD004T2-00 AD004T2-11 AK006R2-01 AS006M1-01 S443
Text: GaAs MMIC Control FET in SOT 143 03A lp ft DC-2.5 GHz AF002C1-32 Features • Low Cost ■ Small SOT 143 Package ■ Series or Shunt Configuration ■ Low DC Current Drain ■ Ideal Switch Building Block Absolute Maximum Ratings Description RF Input Power:
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AF002C1-32
AF002C1-32
AF002C1-39
AS004L2-11
AT001D3â
AK004M2-11
AS004M1-08
AT001D4-31
AK004R2-11
AS004M1-11
E 212 fet
AS006M2-10
AD004T2-00
AD004T2-11
AK006R2-01
AS006M1-01
S443
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AS117-45
Abstract: AD004T2-00 AK006R2-01
Text: GaAs MMIC FET10 Watt Diversity Switch In SOW 16 Package DC-2.0 GHz • " " ■ ■ ■ « ■ ■ ■ 03 Alpha t v ■,. : v r - r ^ - .n I ^w A S 11 7 -4 5 Features High Power P - 1 dB > 10 Watts Integrated Decoder Chip that Provides Two Line Voltage Control
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FET10
AS117-45
DC-2000
DC-1000
04M1-08
AT001D4-31
AK004R2-11
AS004M1-11
AD004T2-00
AK006R2-01
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pin diode limiter
Abstract: MMIC limiter AD004T2-00 AD004T2-11 AE002M2-29 AK006R2-00 AK006R2-01 AK006R2-10 AS006M1-01 AS006M1-10
Text: gQAIpl Switch and Limiter Modules CSB7003-02 Features Stripline Mount Shunt Mounted Limiter in 50£2 Line Switch and Limiter Functions through 18 GHz Description This series of modules consists of a single PIN diode shunt mounted in a 50£2 hermetically sealed package.
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CSB7003-02
CSB7003-02.
AS004L2-11
AT001D3â
AK004M2-11
AS004M1-08
AT001D4-31
AK004R2-11
AS004M1-11
AT001D6-31
pin diode limiter
MMIC limiter
AD004T2-00
AD004T2-11
AE002M2-29
AK006R2-00
AK006R2-01
AK006R2-10
AS006M1-01
AS006M1-10
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AFM02N5-55
Abstract: AD004T2-00 AD004T2-11 AFM02N5-56 AK006R2-01 AK006R2-10 AS006M1-01 AS006M1-10 S443 92260
Text: Low Noise Packaged GaAs MESFET Alph AFM02N5-55, AFM02N5-56 Drain Features Source • Low Noise Figure, 1.1 dB at 12 GHz ■ High Associated Gain, 8.0 dB at 12 GHz ■ High MAG, > 8.5 dB at 12 GHz ■ 0.25 ,um Ti/Pt/Au Gates ■ Passivated Surface ■ Low Cost Metal Ceramic Package
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AFM02N5-55,
AFM02N5-56
AS004L2-11
AT001D3â
AK004M2-11
AS004M1-08
AT001D4-31
AK004R2-11
AS004M1-11
AT001D6-31
AFM02N5-55
AD004T2-00
AD004T2-11
AFM02N5-56
AK006R2-01
AK006R2-10
AS006M1-01
AS006M1-10
S443
92260
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