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    AG312 Price and Stock

    Amprobe Test Tools 3AG-312.250

    FUSE 250MA 250VAC
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    DigiKey 3AG-312.250 Bulk 2 1
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    Newark 3AG-312.250 Bulk 1
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    Amprobe Test Tools 3AG-312

    FUSE GLASS 250MA 250VAC
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    KEMET Corporation PEH536YAG3120M2

    CAP ALUM SNAP-IN 105C
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    DigiKey PEH536YAG3120M2 Box 1,000
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    KEMET Corporation PEH536YAG3120M2S

    CAP ALUM SNAP-IN 105C
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    DigiKey PEH536YAG3120M2S Box 1,000
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    Newark PEH536YAG3120M2S Bulk 100
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    Molex AG312

    Silver Slip Ring |Molex AG312
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    Newark AG312 Bulk 1
    • 1 $2235.37
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    AG312 Datasheets Context Search

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    AG312

    Abstract: No abstract text available
    Text: AG312 Design with PIN Diodes Rev. V3 Introduction The PIN diode finds wide usage in RF, UHF and microwave circuits. It is fundamentally a device whose impedance, at these frequencies, is controlled by its DC excitation. A unique feature of the PIN diode is its


    Original     		PDF AG312 AG312

    bcm 4330

    Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
    Text: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?


    Original     		PDF

    ma8334 diode

    Abstract: MA8334 MA8334-001 MA8334-004 DB diode 844-001 20Notes ag312 high power pin diode
    Text: RF High Average Power Multi-Throw PIN Diode Switch Modules Features • • • • • • SPDT and SP3T Series Diode Designs Lower Intermodulation Distortion, 80 dBc Higher Average Power, 100 W Higher B.W., 10 MHz to 1000 MHz Lower Insertion Loss / Higher Isolation


    Original     		PDF MA8334 highe8334 ma8334 diode MA8334-001 MA8334-004 DB diode 844-001 20Notes ag312 high power pin diode

    MA8334

    Abstract: MA8334-004 MA8334-001 AG312
    Text: MA8334 Series RF High Average Power Multi-Throw PIN Diode Switch Modules Rev. V4 Features • • • • • • SPDT and SP3T Series Diode Designs Lower Intermodulation Distortion, 80 dBc Higher Average Power, 100 W Higher B.W., 10 MHz to 1000 MHz Lower Insertion Loss / Higher Isolation


    Original     		PDF MA8334 MA8334-004 MA8334-001 AG312

    AN4001

    Abstract: laser diode spice model simulation Class E amplifier 300 watt mosfet amplifier class AB MRF transistor PIN diode MACOM SPICE model 27.12MHz power amplifier 27.12Mhz 500 watt mosfet power amplifier circuit diagram 1000 watt mosfet power amplifier
    Text: Application Note AN4001 Application Note 300 Watt Class E Amplifier Using MRF151A Rev. 01262010 BACKGROUND Modern industrial applications for high-efficiency, switch-mode RF amplifiers include laser, plasma, magnetic resonance imaging MRI , and communications. The power levels and frequency of operation of industrial equipment used in these areas vary greatly. While plasma and heating applications tend to cluster at


    Original     		PDF AN4001 MRF151A 12MHz, AN4001 laser diode spice model simulation Class E amplifier 300 watt mosfet amplifier class AB MRF transistor PIN diode MACOM SPICE model 27.12MHz power amplifier 27.12Mhz 500 watt mosfet power amplifier circuit diagram 1000 watt mosfet power amplifier

    Analog Dialogue

    Abstract: MSC 501 302 diode AD9356 schematic diagram UPS 600 Power tree Raytheon Company GPS AD8137-A ADuM7234 Sheingold ADA4691-4 ADP5022
    Text: Volume 44, Number 1, 2010 A forum for the exchange of circuits, systems, and software for real-world signal processing In This Issue 2 Editors’ Notes and Product Introductions 3 Termination of High-Speed Converter Clock Distribution Devices 5 ADIsimPower Provides Robust, Customizable DC-to-DC Converter Designs


    Original     		PDF Engineer--39 Dis13 M02000441-0-5/10 Analog Dialogue MSC 501 302 diode AD9356 schematic diagram UPS 600 Power tree Raytheon Company GPS AD8137-A ADuM7234 Sheingold ADA4691-4 ADP5022

    MA8334-001

    Abstract: K 970 MA8334
    Text: MA8334 Series RF High Average Power Multi-Throw PIN Diode Switch Modules M/A-COM Products Rev. V4 Features • • • • • • SPDT and SP3T Series Diode Designs Lower Intermodulation Distortion, 80 dBc Higher Average Power, 100 W Higher B.W., 10 MHz to 1000 MHz


    Original     		PDF MA8334 MA8334-001 K 970

    MA4P709-150

    Abstract: UHF Phase Shifter AG312 MA4PH451 MA47266 Microwave PIN diode phase shifter circulator 1N5767 MA4P709-985 pin diode limiter 3 ghz 1 watt
    Text: Application Note M an A M P com pany Design With PIN Diodes AG312 By Gerald Hiller V 2.00 Introduction The PIN diode finds wide usage in RF, UHF and microwave circuits. It is fundamentally a device w hose impedance, at these frequencies, is controlled by its DC


    OCR Scan     		PDF AG312 MA4P709-150 UHF Phase Shifter AG312 MA4PH451 MA47266 Microwave PIN diode phase shifter circulator 1N5767 MA4P709-985 pin diode limiter 3 ghz 1 watt

    millimeter wave radar

    Abstract: DIODE ED 92 GaAs Gunn Diode 24 GaAs impatt diode W band
    Text: Afacm MA48700 Series GaAs Multiplier Varactors Features • HIGH CUTOFF FREQUENCY ■ OPERATING TEMPERATURES FROM - 65°C to + 200°C ■ GUARANTEED REPRODUCIBILITY Applications The MA48700 series of Gallium Arsenide Abrupt Junction Multiplier Varactors is specifically designed to provide


    OCR Scan     		PDF MA48700 millimeter wave radar DIODE ED 92 GaAs Gunn Diode 24 GaAs impatt diode W band

    varactor diode capacitance measurement

    Abstract: impatt diode Gunn diode GaAs Gunn Diode "94 GHz" radar gunn diode GaAs Gunn Diode impatt varactor diode high frequency GHz MA48700 Gunn Diode e band
    Text: M/A-COM S E N ICOND tBRLNGTON 11 D • SbM22m ÜGG14DG M ■MIC A fiA s A y fi T - 0 7 - ii MA48700 Series GaAs Multiplier Varactors Features ■ HIGH CUTOFF FREQUENCY r ~\ ■ OPERATING TEMPERATURES FROM - 65°C to + 200°C ■ GUARANTEED REPRODUCIBILITY


    OCR Scan     		PDF t-07-11 MA48700 varactor diode capacitance measurement impatt diode Gunn diode GaAs Gunn Diode "94 GHz" radar gunn diode GaAs Gunn Diode impatt varactor diode high frequency GHz Gunn Diode e band

    MA4PH152

    Abstract: AG312
    Text: Hermetic Surface Mount PIN Diodes Features • SURFACE MOUNT DESIGN ■ HERMETICALLY SEALED PACKAGES ■ POWER DISSIPATION TO 1 WATT ■ LOW LOSS SWITCHING DIODES ■ LOW DISTORTION ATTENUATOR DIODES ■ SCREENABLE TO MILITARY SPECIFICATIONS Description This series of PIN diodes is encapsulated in metal


    OCR Scan     		PDF MIL-STD-750 MIL-STD-202. MA4PH152 AG312