Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 9N90-Q Power MOSFET 9A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N90-Q uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable
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Original
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9N90-Q
9N90-Q
9N90L-TA3-T
9N90G-TA3-T
9N90L-T3P-T
9N90G-T3P-T
O-220
QW-R502-A93
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PDF
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9n80
Abstract: 9N90-T3P-T 9N90 9N90L-T3P-T
Text: UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 900V N-CHANNEL MOSFET DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable
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Original
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9N90L
9N90G
9N90-T3P-T
9N90L-T3P-T
QW-R502-217
9n80
9N90-T3P-T
9N90
9N90L-T3P-T
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 9N90 Preliminary Power MOSFET 9A, 900V N-CHANNEL POWER MOSFET 1 TO-247 DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable
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Original
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O-247
O-220F
O-220F1
O-220F2
QW-R502-217
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 9A, 900V N-CHANNEL POWER MOSFET 1 TO-247 DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable
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Original
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O-247
O-220F
O-220F1
O-220F2
QW-R502-217
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PDF
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9N90L-T3P-T
Abstract: TO247 package dissipation 9N90
Text: UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 900V N-CHANNEL MOSFET DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable
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Original
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9N90L-T47-T
9N90G-T47-T
9N90L-T3P-T
9N90G-T3P-T
9N90L-T47t
QW-R502-217
9N90L-T3P-T
TO247 package dissipation
9N90
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PDF
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9n90
Abstract: w 9n90 220f1 9N90L-T3P-T MOSFET 900V 2A TO-220F1 TO-220-F1
Text: UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 900V N-CHANNEL MOSFET DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable
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Original
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O-247
O-220F1
9N90L-T47-T
9N90G-t
QW-R502-217
9n90
w 9n90
220f1
9N90L-T3P-T
MOSFET 900V 2A
TO-220F1
TO-220-F1
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 9A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use
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Original
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9N90L-T47-T
9N90G-T47-T
9N90L-T3P-T
9N90G-T3P-T
9N90L-entarily,
QW-R502-217
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PDF
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9n90
Abstract: N-channel MOSFET to-247 TO-220F1 IGSS
Text: UNISONIC TECHNOLOGIES CO., LTD 9N90 Preliminary Power MOSFET 9A, 900V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable
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Original
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O-247
O-220F
O-220F1
QW-R502-217
9n90
N-channel MOSFET to-247
TO-220F1
IGSS
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 9A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use
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Original
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QW-R502-217
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 9N90-Q Power MOSFET 9A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N90-Q uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable
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Original
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9N90-Q
9N90-Q
9N90L-TA3-T
9N90G-TA3-T
O-220
QW-R502-A93
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 900V N-CHANNEL MOSFET DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable
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Original
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9N90L-T47-T
9N90G-T47-T
9N90L-T3P-T
9N90G-T3P-T
9N90at
QW-R502-217
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PDF
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9N90
Abstract: 0408 G Diode
Text: UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 9A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable
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Original
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9N90L-T47-T
9N90G-T47-T
9N90L-T3P-T
9N90G-T3P-T
QW-R502-217
9N90
0408 G Diode
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PDF
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