TRANSISTOR SMD MARKING CODE 16
Abstract: TRANSISTOR SMD catalog Marking Code SMD transistors MARKING SMD npn TRANSISTOR R SMD transistor code 132 "Philips Semiconductors" Catalog SMD MARKING CODE transistor smd marking CT1 transistor smd tv T R TRANSISTOR SMD MARKING CODE
Text: Philips Semiconductors: Product information on BFG540; BFG540, X; BFG540, XR, NPN 9GHz wideband transistor Select & Go. Go to Catalog & Start Information as of 2000-11-05 Catalog by Function Discrete semiconductors Audio Clocks and Watches Data communications
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BFG540;
BFG540,
BFG540
BFG540/XR
BFG540/XR
TRANSISTOR SMD MARKING CODE 16
TRANSISTOR SMD catalog
Marking Code SMD transistors
MARKING SMD npn TRANSISTOR R
SMD transistor code 132
"Philips Semiconductors" Catalog
SMD MARKING CODE transistor
smd marking CT1
transistor smd tv
T R TRANSISTOR SMD MARKING CODE
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optical receiver -25dbm 10ghz
Abstract: photodiode germanium Photodiode, 10ghz RF TRANSISTOR 10GHZ low noise Germanium Amplifier Circuit diagram transistor 9716
Text: 19-1970; Rev 2; 1/02 10Gbps, 3.3V Low-Power Transimpedance Amplifier with RSSI Features ♦ 150mW Power Dissipation at 3.3V Supply ♦ 1.1µARMS Noise -18dBm Sensitivity ♦ 9GHz Bandwidth ♦ 2mAP-P Input Overload ♦ Received-Signal Strength Indication
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10Gbps,
150mW
-18dBm
00V/A
MAX3970U/D
OC-192
345mm)
864mm)
optical receiver -25dbm 10ghz
photodiode germanium
Photodiode, 10ghz
RF TRANSISTOR 10GHZ low noise
Germanium Amplifier Circuit diagram
transistor 9716
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transistor 9716
Abstract: photodiode 10Ghz PIN
Text: 19-1970; Rev 1; 10/01 10Gbps, 3.3V Low-Power Transimpedance Amplifier with RSSI Features ♦ 150mW Power Dissipation at +3.3V Supply ♦ 1.1µA RMS Noise -18dBm Sensitivity ♦ 9GHz Bandwidth ♦ 2mAp-p Input Overload ♦ Received-Signal Strength Indication
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10Gbps,
MAX3970
10Gbps
90V/A
-18dBm
150mW
MAX3970
345mm)
transistor 9716
photodiode 10Ghz PIN
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germanium photodiode PIN
Abstract: photodiode 10Ghz PIN BP11 BP13 MAX3970 TIA 100G Photodiode, 10ghz
Text: 19-1970; Rev 0; 3/01 10Gbps, 3.3V Low-Power Transimpedance Amplifier with RSSI Features ♦ 150mW Power Dissipation at +3.3V Supply ♦ 1.1µA RMS Noise -18dBm Sensitivity ♦ 9GHz Bandwidth ♦ 2mAp-p Input Overload ♦ Received-Signal Strength Indication
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10Gbps,
150mW
-18dBm
90V/A
MAX3970U/D
OC-192
345mm)
864mm)
germanium photodiode PIN
photodiode 10Ghz PIN
BP11
BP13
MAX3970
TIA 100G
Photodiode, 10ghz
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transistor 9716
Abstract: photodiode 10Ghz PIN bp-15 0.25pF BP-17 HFAN11
Text: 19-1970; Rev 1; 10/01 10Gbps, 3.3V Low-Power Transimpedance Amplifier with RSSI Features ♦ 150mW Power Dissipation at +3.3V Supply ♦ 1.1µA RMS Noise -18dBm Sensitivity ♦ 9GHz Bandwidth ♦ 2mAp-p Input Overload ♦ Received-Signal Strength Indication
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10Gbps,
MAX3970
10Gbps
90V/A
-18dBm
150mW
MAX3970
345mm)
transistor 9716
photodiode 10Ghz PIN
bp-15
0.25pF
BP-17
HFAN11
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asics
Abstract: AN646 APP646 OC48 asic chips
Text: Maxim > App Notes > ASICs Keywords: ASICs, QuickChip, RF, semicustom, custom, HF, asic, RF ASICs, quick chip, semi-custom, fullcustom Mar 13, 2000 APPLICATION NOTE 646 Semicustom QuickChip ASICs Implement RF Functions to 9GHz Abstract: Maxim has two different approaches for developing HF ASICs: a semi-custom QuickChip design
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com/an646
AN646,
APP646,
Appnote646,
asics
AN646
APP646
OC48
asic chips
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2SC3355 SPICE MODEL
Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness
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F2002:
F2003:
F2004:
2SC3355 SPICE MODEL
transistor C2003
C319B
MGF1412
RF TRANSISTOR 10GHZ
MRF134 rf model .lib file
2SK571
MGF1402
MRF9331
pb_hp_at41411_19921101
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pll 9ghz vco
Abstract: PLL IC SCHEMATIC APP635 9ghz transistor RF TRANSISTOR 9GHZ
Text: Maxim > App Notes > ASICs SIGNAL GENERATION CIRCUITS WIRELESS, RF, AND CABLE Keywords: silicon bipolar, PLL, integrated circuit, IC, Maxim, GST-2, QuickChip, ASIC, broadband pll Mar 27, 2001 APPLICATION NOTE 635 QuickChip Design Example 1 - A Silicon Bipolar Broadband PLL
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16-pin
com/an635
AN635,
APP635,
Appnote635,
pll 9ghz vco
PLL IC SCHEMATIC
APP635
9ghz transistor
RF TRANSISTOR 9GHZ
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rf transistor 6ghz 1w
Abstract: TC2571 TC1501
Text: TC2571 REV.2_04/12/2004 1W Low-Cost Packaged PHEMT GaAs Power FETs FEATURES • • • • • • • • • 1W Typical Output Power at 6 GHz 11dB Typical Power Gain at 6 GHz High Linearity: IP3 = 40 dBm Typical at 6 GHz High Power Added Efficiency: PAE ≥ 43 % for Class A Operation
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TC2571
TC2571
TC1501
rf transistor 6ghz 1w
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gl 7445
Abstract: 15564 TC2676
Text: TC2676 REV4_20070906 2 W Low-Cost Packaged PHEMT GaAs Power FETs FEATURES PHOTO ENLARGEMENT l 2 W Typical Output Power at 6 GHz l 9 dB Typical Linear Power Gain at 6 GHz l High Linearity: IP3 = 43 dBm Typical at 6 GHz l High Power Added Efficiency: Nominal PAE of 43 % at 6 GHz
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TC2676
TC2676
TC1606
gl 7445
15564
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ECG009
Abstract: C100 MCH185A560JK E4432B 60-000346-000B SS 1091
Text: PRELIMINARY DATA SHEET ECG009 BROADBAND HIGH OIP3 AMPLIFIER DC - 2500 MHz Features Applications DC to 2500 MHz 41 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 19.0 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 1900 MHz 24.0 dBm Typical P1dB at 2170 MHz
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ECG009
900MHz
OT-89
ECG009
OT-89
AP-000192-000
AP-000194-000
AP-000487-000
AP-000515-000
C100
MCH185A560JK
E4432B
60-000346-000B
SS 1091
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9-GHz
Abstract: TOP MARKING C1 ROHM C100 ECG009 JESD22-A113-B MCH185A560JK marking c7 sot-89 JESD22-A108-A ROHM SOT89 MARKING resistor de 27k ohm
Text: PRODUCTION DATA SHEET ECG009 BROADBAND HIGH OIP3 AMPLIFIER DC - 2500 MHz Features Applications DC to 2500 MHz 41 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 19.0 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 1900 MHz 24.0 dBm Typical P1dB at 2170 MHz
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ECG009
900MHz
OT-89
ECG009
OT-89
AP-000192-000
AP-000194-000
AP-000487-000
AP-000515-000
AP-000516-000
9-GHz
TOP MARKING C1 ROHM
C100
JESD22-A113-B
MCH185A560JK
marking c7 sot-89
JESD22-A108-A
ROHM SOT89 MARKING
resistor de 27k ohm
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ROHM SOT89 MARKING
Abstract: ECG009B-1000 ECG009 311 SOT89
Text: PRODUCTION DATA SHEET ECG009 BROADBAND HIGH OIP3 AMPLIFIER DC - 2500 MHz Features Applications DC to 2500 MHz 41 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 19.0 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 1900 MHz 24.0 dBm Typical P1dB at 2170 MHz
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ECG009
900MHz
OT-89
ECG009
OT-89
AP-000192-000
AP-000194-000
AP-000487-000
AP-000515-000
ROHM SOT89 MARKING
ECG009B-1000
311 SOT89
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Untitled
Abstract: No abstract text available
Text: Amplifier, Power, 20W 7.5-10.5 GHz MAAPGM0079-DIE Rev A Preliminary Datasheet Features ♦ ♦ ♦ ♦ ♦ 17 Watt Saturated Output Power Level 20 Watt Saturated Output Power Level over 8-10 GHz Band Variable Drain Voltage 8-10V Operation MSAG Process
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MAAPGM0079-DIE
MAAPGM0079-DIE
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NEC 10F
Abstract: low-noise L-band tuner nec mmic Monolithic Amplifier NEC JAPAN TRANSISTORS 1981 nec book
Text: just imagine NEC MUL TI MEDI A NESAT PROCESS nan By utilizing the NESAT NEC Silicon Advanced Technology process, NEC realizes low-noise silicon transistors, high-perform ance silicon m onolithic integrated circuits, as well as in the super high-frequency range high reliability.
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devic87
P12647EJ3V0PF00
NEC 10F
low-noise L-band tuner
nec mmic
Monolithic Amplifier NEC
JAPAN TRANSISTORS 1981
nec book
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PDF
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sanyo tv tuner
Abstract: 2sa1778 JT MARKING 2SA1669 2SC3770 2SC4401 2SC4402 2SC4403 2SC4405 2SC4406
Text: SA/Im VERY HIGH-FREQUENCY TRANSISTOR SERIES Ifcl Use * * * * Wide-band amplifiers UHF.VHF TV tuners CATV converters RF modulators ( )=Marking on MCP. CP, PCP. For PNP, (-)sign is omitted. P C : ( P a c k a g e :PCP) Mounted on PCB ( 2 50mm!X0. 8mm) Features *
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250mm
2SC4401
2SC4402
2SC4403
2SC3776
2SC3777
2SC3778
2SC3779
QD24b07
MT980615TR
sanyo tv tuner
2sa1778
JT MARKING
2SA1669
2SC3770
2SC4405
2SC4406
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Untitled
Abstract: No abstract text available
Text: Ordering number: EN 1949B i S A \Y O No.l949B _ 2SC3776 NPN Epitaxial Planar Silicon Transistor UHF Oscillator, Mixer, Low-Noise Amp, _ Wide-Band Amp Applications i Applications . UHF frequency converters, band amplifiers local oscillators,
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1949B
l949B
2SC3776
5318M0/5137KI/0185KI
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Untitled
Abstract: No abstract text available
Text: Ordering number: EN 1954C SA WO _ 2SC3779 No.l954C NPN Epitaxial Planar Silicon Transistor UHF Low-Noise Amp, Wide-Band Amp Applications Applications . UHF low-noise amplifiers,wide-band amplifiers Features . Small noise figure: NFrl.5dB typ f=0.9GHz .
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1954C
2SC3779
l954C
200MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFG 196 NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fy = 7.5GHz F = 1.5 dEJ at 900MHz
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900MHz
BFG196
Q62702-F1292
OT-223
900MHz
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PDF
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transistor kt 925
Abstract: 2SC4365 2SC4072
Text: SAflYO VERY HIGH-FREQUENCY TRANSISTOR SERIES ill Use * * * * * Features $ * # Wide-band amplifiers UHF, VHF TV tuners CATV converters RF modulators Dual TR for diff. amp High power gain Small noise figure High cutoff frequency ( ) ¡Marking on MCP, CP, PCP. For PNP, (-)sign is omitted.
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250mm
racteristics/Ta-25
MT930617TR
transistor kt 925
2SC4365
2SC4072
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2SC3774
Abstract: No abstract text available
Text: Ordering number: EN 1 94 78 2SC3774 NPN Epitaxial Planar Silicon Transistor UHF Low-Noise Amp, Wide-Band Amp Applications Applications . UHF low-noise amplifiers, wide-band amplifiers Features . Small noise figure: NF=2.2dB typ f=0.9GHz . . High power gain: MAG=l4dB typ(fs0.9GHz).
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2SC3774
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1951B
Abstract: 2SC3778
Text: Ordering num ber:EN 1 951B _ N 0. I 9 5 I B 2SC3778 NPN Epitaxial Planar Silicon Transistor UHF Low-Noise Amp, Wide-Band Amp Applications Applications . UHF low-noise amplifieres,wide-band amplifiers Features . Small noise figure: NFs2.2dB typ f=0.9GHz .
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1951B
1951B
2SC3778
MAG-14dB
lS21ep
10VfIc
1951-VH
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2sc377
Abstract: No abstract text available
Text: S 4 P IV O VERY HIGH-FREQUENCY TRANSISTOR SERIES fcl Use * * * * Wide-band amplifiers UHF, VHF TV tuners CATV converters RF modulators Features * High power gain * Small noise figure * High cutoff frequency ( ):Marking on MCP. CP, PCP. For PNP, (-)sign is omitted.
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250mm
2SC3771
2SC3772
2SC3773
2SC377
2SC3775
2SC4269
2SC4270
2SC4364
2SC4365
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2SC3779
Abstract: U40j 2SC3779 transistor
Text: Ordering number : EN 1954C 2SC 3779 NPN Epitaxial Planar Silicon Transistor S A \ Y O i UHF Low-Noise Amp, Wide-Band Amp Applications Applications . OHF low-noise amplifiers,wide-band amplifiers Features . Small noise figure: NF=1.5dB typ f=0.9GHz . . High power gain: MAG*l4dB typ(f=0.9GHz).
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1954C
2SC3779
SC-51
rO-92
3C-43
2SC3779
U40j
2SC3779 transistor
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