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    marking diode KE

    Abstract: MARKING ke
    Text: CPH6405 N- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high-speed switching. • 2.5V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage


    Original     		PDF CPH6405 CPH6405 991104TM2fXHD marking diode KE MARKING ke

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    Abstract: No abstract text available
    Text: CPH6352 P- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high-speed switching. • 2.5V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage


    Original     		PDF CPH6352 --15V 991104TM2fXHD