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    Untitled

    Abstract: No abstract text available
    Text: CPH6304 P- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high-speed switching. • 4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage


    Original     		PDF CPH6304 --10V --15V 991027TM2fXHD

    RL66

    Abstract: No abstract text available
    Text: CPH6351 P- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high-speed switching. • 2.5V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage


    Original     		PDF CPH6351 --10V 991027TM2fXHD RL66

    marking KC

    Abstract: No abstract text available
    Text: CPH6303 P- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high-speed switching. • 2.5V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage


    Original     		PDF CPH6303 --10V 991027TM2fXHD marking KC