MARKING KA
Abstract: No abstract text available
Text: CPH6401 N- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high-speed switching. • 2.5V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage 20 VDSS Gate to Source Voltage
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CPH6401
900mm2
990915TM2fXHD
MARKING KA
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rl 255 diode
Abstract: k335 FET MARKING QG 2SK3352
Text: 2SK3352 P- Channel Silicon MOS FET DC-DC Converter TENTATIVE Features and Applications • Low ON-state resistance. • Very high - speed switching. • 4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage VDSS Gate to Source Voltage VGSS
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Original
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PDF
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2SK3352
990915TM2fXHD
rl 255 diode
k335
FET MARKING QG
2SK3352
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CPH3404
Abstract: FET MARKING QG
Text: CPH3404 N- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high-speed switching. • 4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage 30 VDSS Gate to Source Voltage
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Original
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PDF
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CPH3404
900mm2
990915TM2fXHD
CPH3404
FET MARKING QG
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