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    BR D2012

    Abstract: D2012 transistor d2012 transistor d2012 specification d2012 transistor FET MARKING QG FTD2012
    Text: FTD2012 N- Channel Silicon MOS FET Load S/W USE TENTATIVE Features • Low ON-state resistance. • 4V drive. • Mount height of 1.1mm. • Complex Type enabling high density mount unit Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage


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    PDF FTD2012 1000mm2 990702TM2fXHD BR D2012 D2012 transistor d2012 transistor d2012 specification d2012 transistor FET MARKING QG FTD2012