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    Abstract: No abstract text available
    Text: 2SK2909 N- Channel Silicon MOS FET Very High - Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very High Speed Switching. • 4V drive. Absolute Maximum Ratings / Ta=25°C VDSS VGSS ID PW≤10µS, dutycycle≤1%


    Original     		PDF 2SK2909 400mA 400mA 100mA 800mA K2909 990309TM2fXHD marking DK

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    Abstract: No abstract text available
    Text: 2SK2911 N- Channel Silicon MOS FET Very High - Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very High Speed Switching. • 2.5V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage


    Original     		PDF 2SK2911 150mA 250mA K2911 990309TM2fXHD marking fk