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    990128TM2FXHD Search Results

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    2SK3266

    Abstract: 2SC4639 FC22
    Text: FC22 TR:NPN Epitaxial Planar Silicon Transistor FET:N-Channel Junction Silicon FET High-Frequency Amp, AM Applications TENTATIVE Features • Composite type with an J-FET transistor and a PNP transistor contained in the conventional CP package, improving the


    Original     		2SC4639 2SK3266, 10IB1 --20V 990128TM2fXHD 2SK3266 FC22 PDF

    FTD1002

    Abstract: FET MARKING QG D1002
    Text: FTD1002 P- Channel Silicon MOS FET TENTATIVE Features • Low ON-state resistance. • 4V drive. • Mount height of 1.1mm. • Complex Type enabling high density mount unit Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage


    Original     		FTD1002 --30V --10V D1002 990128TM2fXHD FTD1002 FET MARKING QG D1002 PDF