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    Untitled

    Abstract: No abstract text available
    Text: FTD2005 N- Channel Silicon MOS FET Very High Speed-Switchng TENTATIVE Features • Low ON-state resistance. • 2.5V drive. • Mount height of 1.1mm. • Complex Type enabling high density mount unit Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage


    Original     		FTD2005 1000mm2 981224TM2fXHD PDF

    2SK2678

    Abstract: No abstract text available
    Text: 2SK2678 N- Channel MOS Silicon FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Low Qg. Tc=25°C Electrical Characteristics / Ta=25°C Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current


    Original     		2SK2678 981224TM2fXHD 2SK2678 PDF