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    2SK3248

    Abstract: No abstract text available
    Text: 2SK3248 N- Channel MOS Silicon FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Low Qg Absolute Maximum Ratings/Ta=25°C Drain to Source Voltage VDSS Gate to Source Voltage VGSS Drain Current DC


    Original     		PDF 2SK3248 -55to 2SK3248 981029TM2fXHD

    S1050

    Abstract: 2SK3249
    Text: 2SK3249 N- Channel MOS Silicon FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Low Qg Absolute Maximum Ratings/Ta=25°C Drain to Source Voltage VDSS Gate to Source Voltage VGSS Drain Current DC


    Original     		PDF 2SK3249 2SK3249 981029TM2fXHD S1050