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    FW232

    Abstract: No abstract text available
    Text: FW232 N- Channel Silicon MOS FET TENTATIVE Features • Low ON-state resistance. • 2.5V drive. unit Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current DC Drain Current(Pulse) Allowable power Dissipation VDSS


    Original     		FW232 1000mm2 980925TM2fXHD FW232 PDF