mosfet 650v
Abstract: No abstract text available
Text: APT97N65B2C6 APT97N65LC6 650V 97A 0.041Ω APT97N65B2C6 COOLMOS Super Junction MOSFET Power Semiconductors T-Max TO-264 • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated APT97N65LC6 • Extreme dv/dt Rated
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APT97N65B2C6
APT97N65LC6
APT97N65B2C6
O-264
APT97N65B2
O-247
mosfet 650v
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Untitled
Abstract: No abstract text available
Text: APT97N65B2C6 APT97N65LC6 650V 97A 0.041 APT97N65B2C6 COOLMOS Super Junction MOSFET Power Semiconductors T-Max TO-264 • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated APT97N65LC6 • Extremedv/dt Rated
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APT97N65B2C6
APT97N65LC6
O-264
APT97N65B2
O-247
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APT20M22JVRU2
Abstract: 200V 200A mosfet
Text: APT20M22JVRU2 ISOTOP Boost chopper MOSFET Power Module K D G S K S D G VDSS = 200V RDSon = 22mΩ max @ Tj = 25°C ID = 97A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch
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APT20M22JVRU2
OT-227)
APT20M22JVRU2
200V 200A mosfet
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APT20M22JVRU3
Abstract: 200V 200A mosfet MOSFET Module 100v 1000A
Text: APT20M22JVRU3 ISOTOP Buck chopper MOSFET Power Module D VDSS = 200V RDSon = 22mΩ max @ Tj = 25°C ID = 97A @ Tc = 25°C Application • • G AC and DC motor control Switched Mode Power Supplies Features S • A • • • A S Power MOS V® MOSFETs - Low RDSon
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APT20M22JVRU3
OT-227)
APT20M22JVRU3
200V 200A mosfet
MOSFET Module 100v 1000A
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APT20M22JVRU3
Abstract: No abstract text available
Text: APT20M22JVRU3 ISOTOP Buck chopper MOSFET Power Module D VDSS = 200V RDSon = 22mΩ max @ Tj = 25°C ID = 97A @ Tc = 25°C Application • • G AC and DC motor control Switched Mode Power Supplies Features S • A A S • • • Power MOS V® MOSFETs - Low RDSon
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APT20M22JVRU3
OT-227)
APT20M22JVRU3
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Untitled
Abstract: No abstract text available
Text: APT20M22JVRU3 ISOTOP Buck chopper MOSFET Power Module D VDSS = 200V RDSon = 22m max @ Tj = 25°C ID = 97A @ Tc = 25°C Application • G AC and DC motor control Switched Mode Power Supplies Features S A A S Power MOS V® MOSFETs - Low RDSon
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APT20M22JVRU3
OT-227)
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Untitled
Abstract: No abstract text available
Text: APT20M22JVRU3 ISOTOP Buck chopper MOSFET Power Module D VDSS = 200V RDSon = 22mΩ max @ Tj = 25°C ID = 97A @ Tc = 25°C Application • • G AC and DC motor control Switched Mode Power Supplies Features S • A A S • • • Power MOS V® MOSFETs - Low RDSon
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APT20M22JVRU3
OT-227)
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Untitled
Abstract: No abstract text available
Text: APT20M22JVRU2 ISOTOP Boost chopper MOSFET Power Module K D G S K S D G VDSS = 200V RDSon = 22m max @ Tj = 25°C ID = 97A @ Tc = 25°C Application • AC and DC motor control Switched Mode Power Supplies Power Factor Correction Brake switch
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APT20M22JVRU2
OT-227)
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APT20M22JVFR
Abstract: No abstract text available
Text: APT20M22JVFR 97A 0.022Ω 200V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT20M22JVFR
OT-227
E145592
APT20M22JVFR
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Untitled
Abstract: No abstract text available
Text: APT20M22JVRU2 ISOTOP Boost chopper MOSFET Power Module K D G S K S D G VDSS = 200V RDSon = 22mΩ max @ Tj = 25°C ID = 97A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch
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APT20M22JVRU2
OT-227)
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FREDFET
Abstract: phase shift resistance welding MIC4452 APT97H50J A1490
Text: APT97H50J 500V, 97A, 0.041Ω Max, trr ≤310ns N-Channel Ultrafast Recovery FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for maximum reliability in ZVS phase shifted bridge and other circuits through much reduced
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APT97H50J
310ns
FREDFET
phase shift resistance welding
MIC4452
APT97H50J
A1490
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KF 517
Abstract: QX 78 7333S 47y3
Text: 97A-1 5C3; A>;:5 AB3B6 @6;3F 7KHVWTKU E`c\ Kf1=D4667;4 z ClXc @B flkglk i\cXp z C`\c\Zki`Z jki\e^k_ 7333S z PBO flkglk E`c\ Kf1=O834659<; z EXjkfe k\id`eXc i\cXp z Dem`ifed\ekXc ]i`\e[cp gif[lZk ,OfGP Zfdgc`XekE`c\ Kf1=BNB3;334356:3 :=?CB ,QX ? 58 86=6@3; ,QX ? 58
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D4667
7333S
O834659<
48SCB
48SCB
65SCB
7333S
B/83Gq293Gq/4d
5833S
KF 517
QX 78
47y3
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200V 200A mosfet
Abstract: SOT-227 heatsink CHopper DC ISOTOP isotop mosfet 100V APT20M22JVRU2
Text: APT20M22JVRU2 ISOTOP Boost chopper MOSFET Power Module K D S K Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Very rugged • Low profile
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APT20M22JVRU2
OT-227)
200V 200A mosfet
SOT-227 heatsink
CHopper DC
ISOTOP
isotop mosfet 100V
APT20M22JVRU2
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Untitled
Abstract: No abstract text available
Text: N Series connectors are medium sized, and weatherproof. The coupling method utilizes a screw system designed for use at frequencies up to microwave. These connectors are particularly useful where precision performance is necessary such as in test equipment, satellite communications, MATV, computer LAN systems, and
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0-18GHz.
ISOCuZn38Pb2
QQ-B-626
QQ-B-750
Copp143A505
145A505
151A505
130A5011
132A5011
TC1028
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MIL H 7199
Abstract: MIL-H-7199 ferrule crimp pull test 162V504E BS4271 qq-c-576 twin bnc DSASW0012651 MIL-C-39012 TNC panel
Text: Specifications for "N" Connectors _ N Series connectors are medium sized, and weatherproof. The coupling method utilizes a screw system designed for use at frequencies up to microwave. These connectors are particularly useful where precision performance is necessary such as in
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0-18GHz.
ISOCuZn38Pb2
QQ-B-626
QQ-B-750
151A505
130A5011
132A5011
TC1028
MIL H 7199
MIL-H-7199
ferrule crimp pull test
162V504E
BS4271
qq-c-576
twin bnc
DSASW0012651
MIL-C-39012 TNC panel
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Untitled
Abstract: No abstract text available
Text: PD - 96903 IRFB3507 IRFS3507 IRFSL3507 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt
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IRFB3507
IRFS3507
IRFSL3507
O-220AB
O-262
EIA-418.
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AN-994
Abstract: IRFB3507 IRFS3507 IRFSL3507
Text: PD - 96903B IRFB3507 IRFS3507 IRFSL3507 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D VDSS RDS on typ. max.
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96903B
IRFB3507
IRFS3507
IRFSL3507
O-220AB
O-262
EIA-418.
AN-994
IRFB3507
IRFS3507
IRFSL3507
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Untitled
Abstract: No abstract text available
Text: PD-95935A IRFB3507PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free HEXFET Power MOSFET D G S VDSS RDS on typ. max. ID
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PD-95935A
IRFB3507PbF
O-220AB
O-220AB
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D8202A
Abstract: intel 8288 intel 8202 8203 8085A L8202A intel 2116 Intel 2164 8202 intel 8202A
Text: in t e i APPLICATION NOTE AP-97A Aprii 1982 6-1 ORDER NUMBER: 2103S»001 AP-97A INTRODUCTION Table 1. Comparison of Intel Static and Dynamic RAMs Introduced during 1981 T he designer o f a m icroprocessor-based system has two basic types o f devices available to im plem ent a ran d o m
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AP-97A
2103S
16-pin
20-pin
74S138
D8202A
intel 8288
intel 8202
8203
8085A
L8202A
intel 2116
Intel 2164
8202 intel
8202A
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TL497
Abstract: TL497A rIP 31 TRANSISTOR 8bc regulator L497A transistor 8bc
Text: TEXAS INSTR LIN/INTFC lôE J> WM 0 ^ 1 7 2 4 0Q7TSfl3 7 TL497AM, TL497AI, TL497AC SWITCHING VOLTAGE REGULATORS D2225, JU NE 1 9 7 6 -R 6 V IS E D OCTO BER 1988 High Efficiency . , . 6 0 % or Greater TL4 97A M . . . J PAC KA G E TL497AI, T L4 97A C . . . D, J, OR N PAC KA G E
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TL497AM,
TL497AI,
TL497AC
D2225,
Tbl754
TL497
TL497
TL497A
rIP 31 TRANSISTOR
8bc regulator
L497A
transistor 8bc
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tic 41
Abstract: No abstract text available
Text: APT20M22JVFR A dvanced P o w er Te c h n o lo g y 200V POWER MOSV 97A 0.022S2 D FREDFET Power MOS V is a new generation of high voltage N-Channei enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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APT20M22JVFR
022S2
OT-227
APT20M22JVFR
OT-227
tic 41
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Untitled
Abstract: No abstract text available
Text: APT20M22JVFR A d van ced P o w er Te c h n o l o g y POWER MOSV 200V 97A 0.0220 FREDFET Power MOSV® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT20M22JVFR
OT-227
E145592
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UDN2597
Abstract: UDN-2598A UDN-2599A UDN2598A UDN stepping udn2596
Text: UDN-2596A THROUGH UDN-2599A 8-CHANNEL SATURATED SINK DRIVERS U D N -2596A T H R O U G H U D N -2599A 8 -C H A N N E L SATURATED S IN K DRIVERS FEATURES • Low Output on Voltages • Up to 1.0A Sink Capability • 50 V Min. Output Breakdown • Output Transient-Suppression Diodes
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UDN-2596A
UDN-2599A
-2596A
-2599A
UDN2599A
UDN-2597A
UDN-2598A
UDN-2599A
UDN2597
UDN2598A
UDN stepping
udn2596
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2N1074
Abstract: 2N1077 2N1076 CK420 2N1075 2SA446 2sc196 A3T2221 PET8007A R110
Text: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,
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2SA372
U7003
2SA446
450MI
450MSA
10Om0
2N960/46
2N962/46
460MI
460M5
2N1074
2N1077
2N1076
CK420
2N1075
2sc196
A3T2221
PET8007A
R110
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